• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.622-626
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• 2003

We report the electrical properties of organic light emitting diodes (OLEDs) depending on the crystal structure of hole injection layer of copper(II)-phthalocyanine(CuPc) and the light irradiation the carrier mobility of copper(II)-phthalocyanine(CuPc) of light source. OLEDs were constructed with indium tin oxide(ITO)/CuPc/triphenyl-diamin(TPD)/tris-(8-hydroxyquinoline)aluminum(Alq$_3$)/Al.Photocurrent multiplication of OLEDs was varied by the heat-treatment condition of CuPc thin film and the light irradiation.

• 한국대기환경학회지
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• 제20권4호
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• pp.515-521
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• 2004

The catalytic oxidation of volatile organic compounds (methanol. acetaldehyde) has been characterized using the copper phthalocyanine catalyst in a fixed bed flow reactor under atmospheric pressure. The catalytic activity for pretreatment conditions was examined by this reaction system. The catalytic activity was ordered as follows: metal free-PC＜Cu ($\alpha$)-PC＜Cu ($\beta$)-PC The formaldehyde, carbon monoxide as a partial oxidation product of methanol and acetaldehyde over Cu ($\alpha$)-PC catalyst were detected and the conversions of methanol and acetaldehyde were accomplished above 95% over Cu ($\alpha$) -PC, Cu ($\beta$) - PC catalyst at 35$0^{\circ}C$. The pretreated metal free -PC, Cu($\alpha$)-PC, Cu($\beta$)-PC catalysts have been characterised by TGA, EA and XRD analysis. The catalytic activity pretreated with air and $CH_3$OH mixture (P-4) or air only (P-5) was very excellent. XRD and EA results showed that Cu($\alpha$)-PC, Cu($\beta$)-PC were destroyed an(1 new metal oxide such as CuO were formed.

• 한국안전학회지
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• 제28권2호
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• pp.37-41
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• 2013

In this work, we report the effect on the volatole organic compounds(VOCs) sensing properties of Copper phthalocyanine(CoPc) and Dilithium phthalocyanine(DiLiPc) thin films onto alumina substrates. Use evaporation method and the spin-coated method for sensing device. The materials of metallophthalocyanine macrocyclic compound solutions blended with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] solutions. The influence of the blended in with metallophthalocyanine macrocyclic compounds on the resistance have been measured and analyzed in five different volatole organic compounds. The following results were obtained: The AFM 3D image of thin films deposited on metallophthalocyanine macrocyclic compound shows that the surfaces roughness were about CuPc 4.1~14.3 nm(7.5~8.1%), DiLiPc 10.3~22.2 nm(7.9~11.5%). The resistances decreases upon increasing the concentration of vapor organic compounds to CuPc and DiLiPc thin films. That thin films blended Copper phthalocyanine(CoPc) and Dilithium phthalocyanine(DiLiPc) with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy--5-(2'-ethylhexyloxy)-1,4-phenylenevinylene]. The resistances of blended thin films with N,N'-diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4"-diamine and/or Poly[2-methoxy--5-(2'-ethylhexyloxy)-1,4-phenylenevinylene] decreases upon increasing the concentration of volatole organic compounds(VOCs) on DiLiPc than CuPc compound thin films.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.526-530
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• 2004

We report the space charge and the surface potential of the interface between metal and CuPc according to isotropic property and different metal by measuring the microwave reflection coefficients $S_{11}$ of copper(II)-phthalocyanine(CuPc) thin films by using a near-field microwave microscope(NSMM) in order to understand. CuPc thin films were prepared on gold and aluminium substrates using a thermal evaporation method. Two kinds of CuPc thin films were prepared. One was deposited on preheated substrate at $150^{\circ}C$ and the other was annealed after deposition by using thermal evaporation methods. The microwave reflection coefficients $S_{11}$ of CuPc thin films were changed by the dependence on the heat treatment conditions. By comparing reflection coefficient $S_{11}$ we measured electrical conductivity of CuPc thin films and studied this results with respect to the surface potential and space charge of the interface between metal and CuPc thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 디스플레이 광소자분야
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• pp.132-136
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• 2004

열 증착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 열처리 조건은 $150^{\circ}C$에서 후열(annealing) 처리 하는 방식과 예열하는 두 가지 방식으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로웨이브 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 에너지 밴드갭의 shift 현상과 관련지어 설명하고 또한 x-ray diffraction(XRD) data를 통해 박막의 결정 특성과 비교하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 조건에 따른 CuPc 박막의 전기전도도 특성은 후열 처리한 박막의 경우 예열 처리한 박막보다 전기 전도 특성이 향상되었음을 관측할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제8권4호
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• pp.174-177
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• 2007

We fabricated organic field-effect transistors (OFETs) based a fluorinated copper phthalocyanine ($F_{16}CuPC$) and copper phthalocyanine (CuPc) as an active layer. And we observed the surface morphology of the $F_{16}CuPC$ thin film. The $F_{16}CuPC$ thin film thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. And we also fabricated the $F_{16}CuPc/CuPc$ double layer FET and with different $F_{16}CuPc$ film thickness devices. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in $F_{16}CuPc$ FET and we calculated the effective mobility. From the double layer FET devices, we observed the higher drain current more than single layer FET devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.275.1-275.1
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• 2014

The effects of the interfacial buffer layer and temperature on the organic bulk heterojunction (BHJ) nanostructures of copper phthalocyanine (CuPc) and fullerene (C60) systems were investigated using real time in-situ x-ray scattering. In the CuPc:C60 BHJ structures, standing-on configured ${\gamma}$-CuPc phase was formed by co-deposition of CuPc and C60. Once formed ${\gamma}$-phase was thermally stable during the annealing upon $180^{\circ}C$. Meanwhile, the insertion of CuI buffer layer prior to deposition of the CuPc:C60 BHJ layer induced lying-down configured CuPc crystals in the BHJ layer. The lying CuPc peak intensity and the lattice parameter were increased by the thermal annealing. This increment of the intensity seemed to be related to the strain at the interface between CuPc:C60 and CuI, which was proportional to the enhancement of the power conversion efficiency of the device.

• 한국인쇄학회지
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• 제11권1호
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• pp.103-122
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• 1993

A cause and counterplan of the increase in dark decay rate of$\varepsilon$-CuPc/PVCz photoreceptor which is consist of the carrier generation layer (CGL) of$\varepsilon$type copper phthalocyanine ($\varepsilon$-CuPc) thin film by an aqueous coating method and the carrier transport layer (CTL) of polyvinylcarbazol (PVCz) by spin coating, are studied in this paper. Electrochemical deposition of CGL was accompanied by an increase in work function of the aluminium substrate during the processes and the enhanced work function 5.3 eV rose above the ionization potential 5.16 eV of $\varepsilon$-CuPc. This resulted in the increased injection of holes from substrate into CGL and a fast dark decay rate. Improved photoreceptor, an electron-transport $\varepsilon$-CuPc/TNF photoreceptor, led to lowing of dark decay rate and increasing of photosensitivity. The carrier generation efficiency (ηg), carrier injection efficiency (ηi) and xerographic gain (G) of the $\varepsilon$-CuPc/TNF photoreceptor were obtained by XTOF method and PIDC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.395-396
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• 2008

Copper-Phthalocyanine (Cu-Pc) thin films of 100nm thickness have been deposited on silicon substrates as the different heating temperatures by thermal evaporation deposition technique. X-ray patterns showed with different temperature conditions at the $2\theta$ range of 5-$55^{\circ}$. The surface roughness of Cu-Pc thin films was investigated by using an atomic force microscope (AFM). A scanning electron microscope (SEM) has been used to characterize the micro-structures and morphologies depended on the substrate temperatures.