• Current Photovoltaic Research
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• 제3권1호
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• pp.27-31
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• 2015

It is known that sulfide at the $Cu(In,Ga)Se_2$ ($CIGSe_2$) surface plays a positive role in $CIGSe_2$ solar cells. We investigated the substitution of S with Se on the $CIGSe_2$ surface in S atmosphere. We observed that the sulfur content in the $CIGSe_2$ films changed according to sulfurization temperature and Cu/(In+Ga) ratio. The sulfur content in the $CIGSe_2$ films increased with increasing the annealing temperature and Cu/(In+Ga) ratio. Also Cu migration toward the surface increased at higher temperature. Since high Cu concentration at the $CIGSe_2$ surface is detrimental role, it is necessary to reduce the S annealing temperature as low as $200^{\circ}C$. The cell performance was improved at $200^{\circ}C$ sulfurization.

• 대한의용생체공학회:의공학회지
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• 제20권4호
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• pp.443-449
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• 1999

현재 시판되고 있는 치과용 76.5%Pd-11.6%Cu-7.2^%GarP 합금의 주조상태 및 임상열처리에 따른 미세조직의 변화를 X-선 회절기, 광학현미경, 시차열분석기를 이용하여 관찰하였다. 주조상태, 탈개스 및 세리믹소성처리 후 미세조직은 Pd고용체와 금속간화합물 Pd2Ga으로 구성되어 나타났고, 이들 상들은 열처리에 따라 상당한 변화를 보였다. 또한 Pd은 아르곤 분위기 내의 산소와 반응하여 산화물 형성 및 분해로 인해 질량변화곡선(TG)이 변하였고, 시차열분석(DTA)에서는 약 815$^{\circ}C$ 정도에서 Pd2Ga에 기인하는 흡열피크를 확인하였다. 이러한 실험의 결과들은 Cu가 이원계 Pd-Ga 합금의 Ga의 고용량을 낮추어 공정반응이 저 Ga 쪽으로 이동하기 때문인 것으로 설명하였다. 그러나 앞으로 보다 명확한 상변태 규명을 위해서 TEM등의 분석장비를 사용하여 체계적인 연구가 요구된다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1584-1586
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• 2002

CuIn$Se_2$ (CIS) and related compounds such as Cu($In_xGa_{1-x})Se_2$(CIGS) have been studied by their potential for use in photovoltaic devices. CIS thin film materials which have high absorption coefficient and wide bandgap, have attracted much attention as an alternative to crystalline and amorphous silicon solar cells currently in use. Cu-rich CIGS film have very low resistivity, due to coexistence of the semimetallic $Cu_{2-x}Se$. In-rich CIGS films show high resistivity, since these films are compensated films without the $Cu_{2-x}Se$ phase. Optical properties of the CIGS films also change in accordance with the resistivity for the Cu/(In+Ga) ratio. The Cu-rich films have different spectra from In-rich films in near infrared wavelengths.

• Journal of Magnetics
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• 제12권2호
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• pp.59-63
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• 2007

Ferromagnet/Semiconductor heterostructures have attracted much attention because of their potential applications in spintronic devices. We investigated the electronic structures and magnetism of monolayer Fe on $CuGaSe_2(001)$ by using the all-electron full-potential linearized augmented plane-wave method within a generalized gradient approximation. We considered the monolayer Fe deposited on both the CuGa atoms terminated (CuGa-Term) and the Se atom terminated (Se-Term) surfaces of $CuGaSe_2(001)$. The calculated magnetic moment of the Fe atom on the CuGa-Term was about $2.90\;{{\mu}_B}$. Those of the Fe atoms on the Se-Term were in the range of $2.85-2.98\;{{\mu}_B}$. The different magnetic behaviors of the Fe atoms on two different surfaces were discussed using the calculated layer-projected density of states.

• 한국결정성장학회지
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• 제13권5호
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• pp.230-234
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• 2003

GaAs (001) 기판과 완충층을 사용한 ZnTe/GaAs(001) 기판 위에 고농도의 Zn 조성을 가지는 $Cd_xZn_{1-x}$Te/GaAs, $Cd_xZn_{1-x}$Te/ZnTe/GaAs 에피층 구조를 성장시켰다. 이때 $Cd_xZn_{1-x}$Te 에피층에서의 CuPt형의 규칙상 형성, 미세구조적 특성과 광발광특성을 X-선회절과 전자회절상, 고분해능 투과전자현미경, 그리고 저온 광발광 측정 장치를 이용하여 연구하였다.

• Current Photovoltaic Research
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• 제9권4호
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• pp.137-144
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• 2021

In this study, the microstructure of the CVD-fabricated Cu(In,Ga)Se₂ (CIGSe) absorber layer by simulating the stacking sequence used in a co-evaporation method, and changes solar cell performance were investigated. The absorber layer prepared by stacking CuSe and (In,Ga)Se between InSe is separated into Ga-free CuInSe₂ and Ga-rich CIGSe, and transformed to CIGSe by selenization heat treatment with slight improvement in the the solar cell efficiency. However, in CVD, since the supply of liquid Cu-Se is not as active as in the co-evaporation method, the nanoocrystalline layer containing a large amount of Ga remained independently in the absorption layer, which acted as a cause of the loss of J_SC and FF. Therefore, by using a precursor structure in which CuGa is sputter-deposited on a single layer of InSe deposited by CVD, performance parameters of V_OC, J_SC, and FF could be greatly improved.

• 한국분말재료학회지
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• 제21권3호
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• pp.229-234
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• 2014

This study manufactured a CIG-based composite coating layer utilizing a new warm spray process, and a mixed powder of Cu-20at.%Ga and Cu-20at.%In. In order to obtain the mixed powder with desired composition, the Cu-20at.%Ga and Cu-20at.%In powders were mixed with a 7:1 ratio. The mixed powder had an average particle size of $35.4{\mu}m$. Through the utilization of a warm spray process, a CIG-based composite coating layer of $180{\mu}m$ thickness could be manufactured on a pure Al matrix. To analyze the microstructure and phase, the warm sprayed coating layer underwent XRD, SEM/EDS and EMPA analyses. In addition, to improve the physical properties of the coating layer, an annealing heat treatment was conducted at temperatures of $200^{\circ}C$, $400^{\circ}C$ and $600^{\circ}C$ for 1 hour each. The microstructure analysis identified ${\alpha}$-Cu, $Cu_4In$ and $Cu_3Ga$ phases in the early mixed powder, while $Cu_4In$ disappeared, and additional $Cu_9In_4$ and $Cu_9Ga_4$ phases were identified in the warm sprayed coating layer. Porosity after annealing heat treatment reduced from 0.75% (warm sprayed coating layer) to 0.6% (after $600^{\circ}C/1hr$. heat treatment), and hardness reduced from 288 Hv to 190 Hv. No significant phase changes were found after annealing heat treatment.

• 한국전기전자재료학회논문지
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• 제26권12호
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• pp.888-893
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• 2013

In this paper, we prepared $Cu(In,Ga)Se_2$ thin films by using co-evaporation method, and analyzed the properties of the thin films. During the thin film preparation process, we confirmed $InGaSe_2$ phase was formed at $400^{\circ}C$ in first stage, and also confirmed the thin films showed the vacancy decrease. In second and third stage, we confirmed the density increase of crystalline structure at over $480^{\circ}C$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ phase. As the result of SEM and XRD analysis of the films which were before and after heat-treated, we confirmed the disappearance of $Cu_2Se_2$ and the formation of $Cu(In_{0.7}Ga_{0.3})Se_2$ single phase after the heat-treatment, We, therefore, confirmed the heat-treatment did not affect the absorbency spectra of the thin films.

• ETRI Journal
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• 제34권5호
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• pp.779-782
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• 2012

$CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.

• 한국분말재료학회지
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• 제23권1호
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• pp.21-25
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• 2016

The microstructural properties and electrical characteristics of sputtering films deposited with a Cu-Ga target are analyzed. The Cu-Ga target is prepared using the cold spray process and shows generally uniform composition distributions, as suggested by secondary ion mass spectrometer (SIMS) data. Characteristics of the sputtered Cu-Ga films are investigated at three positions (top, center and bottom) of the Cu-Ga target by X-ray diffraction (XRD), SIMS, 4-point probe and transmission electron microscopy (TEM) analysis methods. The results show that the Cu-Ga films are composed of hexagonal and unknown phases, and they have similar distributions of composition and resistivity at the top, center, and bottom regions of the Cu-Ga target. It demonstrates that these films have uniform properties regardless of the position on the Cu-Ga target. In conclusion, the cold spray process is expected to be a useful method for preparing sputter targets.