• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.1-10
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• 2023

Recently, as the demand for high-performance computers and mobile products increases, semiconductor packages are becoming high-integration and high-density. Therefore, in order to transmit a large amount of data at once, micro bumps such as flip-chip and Cu pillar that can reduce bump size and pitch and increase I/O density are used. However, when the size of the bumps is smaller than 70 ㎛, the brittleness increases and electrical properties decrease due to the rapid increase of the IMC volume fraction in the solder joint, which deteriorates the reliability of the solder joint. Therefore, in order to improve these issues, a layer that serves to prevent diffusion is inserted between the UBM (Under Bump Metallization) or pillar and the solder cap. In this review paper, various studies to improve bonding properties by suppressing excessive IMC growth of micro-bumps through additional layer insertion were compared and analyzed.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.831-832
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• 2013

• Journal of Powder Materials
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• v.29 no.3
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• pp.226-232
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• 2022

In this study, a new manufacturing process for a multilayer-clad electrical contact material is suggested. A thin and dense BCuP-5 (Cu-15Ag-5P filler metal) coating layer is fabricated on a Ag plate using a high-velocity oxygen-fuel (HVOF) process. Subsequently, the microstructure and bonding properties of the HVOF BCuP-5 coating layer are evaluated. The thickness of the HVOF BCuP-5 coating layer is determined as 34.8 ㎛, and the surface fluctuation is measured as approximately 3.2 ㎛. The microstructure of the coating layer is composed of Cu, Ag, and Cu-Ag-Cu3P ternary eutectic phases, similar to the initial BCuP-5 powder feedstock. The average hardness of the coating layer is 154.6 HV, which is confirmed to be higher than that of the conventional BCuP-5 alloy. The pull-off strength of the Ag/BCup-5 layer is determined as 21.6 MPa. Thus, the possibility of manufacturing a multilayer-clad electrical contact material using the HVOF process is also discussed.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.857-863
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• 2014

In this work, we introduce various bonding technologies for 3D package and suggest Insert-Bump bonding (ISB) process newly to stack multi-layer chips successively. Microstructure of Insert-Bump bonding (ISB) specimens is investigated with respect to bonding parameters. Through experiments, we study on find optimal bonding conditions such as bonding temperature and bonding pressure and also evaluate in the case of fluxing and no-fluxing condition. Although no-fluxing bonding process is applied to ISB bonding process, good bonding interface at $270^{\circ}C$ is formed due to the effect of oxide layer breakage.

• Journal of Welding and Joining
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• v.31 no.6
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• pp.77-83
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• 2013

3D packaging technology using TSV (Through Silicon Via)has been studied in the recent years to achieve higher performance, lower power consumption and smaller package size because electrical line is shorter electrical resistivity than any other packaging technology. To stack TSV chips vertically, reliable and robust bonding technology is required because mechanical stress and thermal stress cause fracture during the bonding process. Cu pillar/solder ${\mu}$-bump bonding process is usually to interconnect TSV chips vertically although it has weak shape to mechanical stress and thermal stress. In this study, we suggest Insert-Bump (ISB) bonding process newly to stack TSV chips. Through experiments, we tried to find optimal bonding conditions such as bonding temperature and bonding pressure. After ISB bonding, we observed microstructure of bump joint by SEM and then evaluated properties of bump joint by die shear test.

• Transactions of Materials Processing
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• v.16 no.7
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• pp.530-537
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• 2007

This paper is concerned with the analysis of plastic deformation of bimetal co-extrusion process. Two sets of material combination have been adopted for analysis, i.e. combinations of Cu/Al and Fe/Al. In the first set of material combination, the selected materials are AA 1100 aluminum alloy as hard material and CDA 110 as soft one. This type of material selection is to examine the effect of hard core and soft sleeve and vice versa on the deformation pattern in terms of plastic zone and velocity discontinuity along the contact surface between construction materials. Four different cases of co-extrusion process in terms of material combination and interference bonding were simulated to investigate the effect of material arrangement between core and sleeve, and of bonding on the plastic zones and velocity discontinuity. In the other set of material combination, model materials used as core and sleeve were AA 1100 and AISI 1010, which are relatively soft and hard, respectively. Process parameters except diameter ratio of core to sleeve material such as semi-die angle, reduction in area in global sense and die comer radius have been set constant throughout the simulation to concentrate our effort on the analysis of influence of diameter ratio on deformation behavior such as deformation zone, surface expansion, exit velocity discontinuity between composite materials, and extrusion forces.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.133-133
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• 1998

In the thin film alloy formation of the transition metals ion-beam-mixing technique forms a metastable structure which cannot be found in the arc-melted metal alloys. Sppecifically it is well known that the studies about the electronic structure of ion-beam-mixed alloys pprovide the useful information in understanding the metastable structures in the metal alloy. We studied the electronic change in the ion-beam-mixed ppt-Ct alloys by XppS and XANES. These analysis tools pprovide us information about the charge transfer in the valence band of intermetallic bonding. The multi-layered films were depposited on the SiO2 substrate by the sequential electron beam evapporation at a ppressure of less than 5$\times$10-7 Torr. These compprise of 4 ppairs of ppt and Cu layers where thicknesses of each layer were varied in order to change the alloy compposition. Ion-beam-mixing pprocess was carried out with 80 keV Ae+ ions with a dose of $1.5\times$ 1016 Ar+/cm2 at room tempperature. The core and valence level energy shift in these system were investigated by x-ray pphotoelectron sppectroscoppy(XppS) pphotoelectrons were excited by monochromatized Al K ａ(1486.6 eV) The ppass energy of the hemisppherical analyzer was 23.5 eV. Core-level binding energies were calibrated with the Fermi level edge. ppt L3-edge and Cu K-edge XANES sppectra were measured with the flourescence mode detector at the 3C1 beam line of the ppLS (ppohang light source). By using the change of White line(WL) area of the each metal sites and the core level shift we can obtain the information about the electrons pparticippating in the intermetallic bonding of the ion-beam-mixed alloys.

• The Journal of Korean Academy of Prosthodontics
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• v.27 no.1
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• pp.143-179
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• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.25 no.10
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• pp.1541-1550
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• 2001

This paper describes experimental investigations in the direct extrusion of copper clad aluminum rods through conical dies. Composite materials consist of two or more different material layers. Copper clad aluminum composite materials are being used fur economic and structural purposes and the development of an efficient production method of copper clad aluminum composite material rods by extrusion is very important, It is necessary to know the conditions in which successful uniform extrusion ,and sound cladding may be carried out without any defects in the direct extrusion. There are several variables that have an influence on determining a sound clad extrusion. In order to investigate the influence of these parameters on the hot direct extrudability of the copper clad aluminum composite material rods, the experimental study have been performed with various extrusion temperatures, extrusion ratios and semi-cone angles of die. Subsequently, the microscopic inspection of interface bonding is carried out for extruded products. By measuring hardness, along extrusion way of products, a variation of hardness has been discussed. Proportional flow state has been considered by measuring radius ratio of Cu sleeve and Al core before and after extrusion.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.71-74
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• 2013

In this study, the effects of wafer warpage on the misalignment during wafer stacking process were investigated. The wafer with $45{\mu}m$ bow height warpage was purposely fabricated by depositing Cu thin film on a silicon wafer and the bonding misalignment after bonding was observed to range from $6{\mu}m$ to $15{\mu}m$. This misalignment could be explained by a combination of $5{\mu}m$ radial expansion and $10{\mu}m$ linear slip. The wafer warpage seemed to be responsible for the slip-induced misalignment instead of radial expansion misalignment.