• Journal of Welding and Joining
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• v.29 no.3
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• pp.39-44
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• 2011

• Proceedings of the Optical Society of Korea Conference
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• 2006.07a
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• pp.143-144
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.26.2-26.2
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• 2006

• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.443-453
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• 2017

In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.275-275
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• 2010

국제핵융합실험로 (ITER)의 블랑켓 일차벽 조달 자격 획득을 위한 검증시험을 수행하여 1단계를 2009년 완료하였고, 2단계는 2011년 예정으로 진행 중이다. 우리나라는 이미 1단계 검증시험에서 2 개의 일차벽 목업 (First Wall Qualification Mockup ; FWQM)을 제출하여 시험을 성공적으로 통과하였고, 2단계 검증 시험을 위해 semi-prototype 제작 기술 및 시험 기술을 개발 중이다. 블랑켓 일차벽 검증 시험 및 제작 기술을 확보하기 위한 고유접합법 개발을 위해서 표준 크기($80\;mm{\times}80\;mm$)의 목업을 제작하여 국내 고열부하 시험 시설에서 접합 방법의 타당성을 확인하였다. 표준목업은 HIP (Hot Isostatic Pressing) 접합법으로 stainless steel과 Cu 냉각부를 제작하고, 다시 $80\;mm{\times}80\;mm$ Be tile을 HIP 방법으로 냉각부에 접합하여 제작한다. 고유접합법 개발을 위해서 Be과 Cu 냉각부 계면에 Cr($1\;{\mu}m$)/Cu($10\;{\mu}m$), Ti($5\;{\mu}m$)/Cu($10\;{\mu}m$) 층을 코팅하여 Be 접합 성능을 개선하였으며, 기존의 접합 계면과 차별화된 기술을 확보하였다. 표준목업의 전체 크기는 $80\;mmW{\times}80\;mmL{\times}84\;mmH$ 이고, 1차로 총 6개, 2차로 4개를 제작하였으며 제작 과정 및 제작 전후에 파괴검사, 비파괴검사를 수행하여 접합의 건전성을 확인하였다. 제작 완료된 표준 목업은 냉각 관로를 장착하여 국내의 고열부하 시험시설인 KoHLT-1에 장착하여 성능 시험을 수행하였다. 고열부하 시험 시설의 냉각수 조건은, 온도 $25^{\circ}C$(실온), 유량 0.15 kg/sec이고, 고열 부하 조건에서는 0.5, 1.0, $1.5\;MW/m^2$의 screening 시험을 거친 후 1.5 MW/m2에서 cycle 시험을 진행하였다. 각 목업의 고열부하 시험을 마친 후 비파괴 검사의 일환으로 UT(Ultrasonic test) 시험을 수행하여 열부하 시험 전후의 목업 건전성을 확인하였다. 고유접합법을 이용하여 개발한 표준 목업의 고열부하 시험을 통해서 접합법의 타당성 및 건전성을 확인하였고, 향후 블랑켓일차벽 조달 검증 2단계 시험에서 semi-prototype 제작 및 고열부하 시험에 대비하고, ITER 관련 핵심 기술 개발 목표를 달성할 것이다.

• Journal of Welding and Joining
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• v.11 no.1
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• pp.62-72
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• 1993

Recently there is an increased interest in joining of ceramics to metals and brazing now an accepted method of joining for a wide variety of ceramic to metal combination. The present research work is aimed at establishing the basis of the metal-ceramic joining of $Al_{2}$O$_{3}$ to STS 304 with using Cu-7.5wt% Zr insert metals. Also the microstructures of the brazed joints were observed by using optical microscope and SEM and the reaction products were analyzed by using EDX, WDX and XRD. As a result, the following findings were obtained. The reaction layers of the brazed joints of $Al_{2}$O$_{3}$ to STS 304 are composed of four layers at the bonded interlayer. Double reaction layers are formed at the interface of $Al_{2}$O$_{3}$ insert metal. Layer I was composed of ZrO$_{2}$ particles, Fe-Cr-Ni compounds in Cu matrix, while layer II ZrO$_{2}$ band phase containing Fe-Cr-Ni compounds.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.374-374
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• 2011

Cu(In,Ga)Se2 (CIGS) 박막 태양전지는 일반적으로 Soda lime glass/Mo/CIGS/CdS/ZnO/ITO/Al의 구조로 제작된다. 태양전지는 p형과 n형 반도체의 접합에 의해서 동작을 하게 되며, CIGS 박막 태양전지에서는 p형으로 CIGS 박막과 n형으로 CdS 박막이 사용된다. CIGS 박막태양전지에서는 p형과 n형이 서로 다른 물질로 이루어진 이종접합을 이루게 되고, 계면에서의 밴드가 어떻게 형성이 되느냐에 따라 태양전지 성능에 영향을 미치게 된다. p형의 CIGS 박막은 주로 다단계 증발법에 의해 형성되고 3단계 공정조건에 의해 계면의 특성에 많은 영향을 미치게 된다. n형의 CdS 박막은 주로 chemical bath deposition (CBD) 법에 의해 제작된다. 이렇게 제작되는 CBD-CdS는 시약의 농도, pH (수소이온농도), 박막 형성시의 온도 등의 조건에 따라 특성이 변하게 된다. 본 논문에서는 3단계 공정시간을 변화시켜 제작된 CIGS 박막 위에 CBD-CdS 증착 조건 중 thiourea 의 농도를 변화시켜 CIGS 태양전지를 제작하고 그에 따른 특성을 살펴보았다. CIGS 박막은 3단계 공정시간을 490초와 360초로 하여 제작하였고, CdS 박막은 thiourea 농도를 각각 0.025 M과 0.05 M, 0.074 M, 0.1 M로 변화시켜가며 제작하였다. 제작된 CIGS 박막 태양전지는 CIGS 3단계 공정시간과 thiourea의 조건에 따라 최고 15.81%, 최저 14.13%로 나타내었다. 또한, 외부양자효율을 측정하여 제작된 CIGS 박막 태양전지의 파장에 따른 특성을 비교하였다.

• Journal of Welding and Joining
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• v.35 no.3
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• pp.1-6
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• 2017

The effect of metal turnover (MTO) of electroless Ni plating bath on the brittle fracture behavior of electroless nickel electroless palladium immersion gold (ENEPIG)/Sn-3.0wt%Ag-0.5wt%Cu(SAC305) solder joint was evaluated in this study. The MTOs of the electroless Ni for the ENEPIG surface finish were 0 and 3. As the MTO increased, the interfacial IMC thickness increased. The brittle fracture behavior of the ENEPIG/SAC305 solder joint was evaluated with high speed shear (HSS) test. The HSS strength decreased with increasing the MTO of the electroless Ni bath. The brittle fracture increased with increasing the shear speed of the HSS test. The percentage of the brittle fracture for the 3 MTO sample was much higher than that for the 0 MTO sample.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.11a
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• pp.67-73
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• 2001

To investigate the relationships of solder joint characteristics with solder composition and A:V ratio (solder volume per pad area), Sn-37Pb and Sn-4.0Ag-0.5Cu solder balls with 330, 400, 450 and $457{\mu}{\textrm}{m}$ size were reflowed on same substrate. Sn-37Pb and Sn-4.0Ag-0.5Cu was reflowed at $220^{\circ}C$ and $240^{\circ}C$ respectively by IR-type soldering machine. As a result of reflowed solder- ball diameter(D) and height(H) measurement, D/H was decreased with solder ball size increment in range of 330~450 ${\mu}{\textrm}{m}$. But, D/H was increased in the solder joint for 457 ${\mu}{\textrm}{m}$ size, it was caused possibly by decrement of solder ball height increment compared with solder volume increment. As a result of shear and pull test, joint strength with A:V ratio was high. Joint strength of Sn-4.0Ag-0.5Cu was higher than Sn-37Pb. However, Sn-37Pb had more stable solder joint of small standard deviation. A thick and clean scallop type Ni-Cu-Sn intermetallic compound layer was formed in high A:V ratio and Sn-4.0Ag-0.5Cu solder joint interface.

• Korean Journal of Materials Research
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• v.15 no.5
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• pp.318-322
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• 2005

Ti-capped NiSi contacts were formed on $p^+/n$ junctions to improve the leakage problem and then Cu was deposited without removing the Ti-capping layer in an attempt to utilize as a diffusion barrier. The electrical characteristics of these $p^+/n$ diodes with Cu/Ti/NiSi electrodes were measured as a function of drive-in RTA(rapid-thermal annealing) and silicidation temperature and time. When drive-in annealed at $900^{\circ}C$, 10 sec. and silicided at $500^{\circ}C$, 100 sec., the diodes showed the most excellent I-V characteristics. Especially, the leakage current was $10^{-10}A$, much lower than reported data for diodes with NiSi contacts. However, when the $p^+/n$ diodes with Cu/Ti/NiSi contacts were furnace-annealed at $400^{\circ}C$ for 40 min., the leakage current increased by 4 orders. The FESEM and AES analysis revealed that the Ti-capping layer effectively prohibited the Cu diffusion, but was ineffective against the NiSi dissociation and consequent Ni diffusion.