• Proceedings of the KWS Conference
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• 1992.10a
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• pp.122-124
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• 1992

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Proceedings of the KWS Conference
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• 2006.10a
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• pp.199-201
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• 2006

The wetting balance test was carried out to compare the wettability of Sn-Xwt%Cu($0{\sim}3$wt%) solders. And, IMCs which were formed at interface between solders and substrates were investigated by using XRD(x-ray diffractometer), SEM(scanning electron microscope) and EDS(energy dispersive spectroscope). The value of ${\gamma}_[fl}$ and(${\gamma}_{fs}-{\gamma}_{ls}$) had a tendency to increase with increasing wetting temperature. The activation energy that was calculated between the bare Cu substrate and flux was increased in the following order Sn-0.7wt%Cu(68.42 kJ/mol);Sn-3.0wt%Cu(72.66 kJ/mol);100wt%Sn solder(94.53 kJ/mol).

• Proceedings of the KWS Conference
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• 2006.05a
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• pp.230-232
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• 2006

Eutectic Au-20Sn solder has been widely used for optoelectronic packages because of fluxless soldering process and thus are particularly valuable for many applications such as biomedical, photonic, and MEMS devices that can not use any flux. Also when good joint strength, superior resistance to corrosion, whisker-free, and good thermal conductivity are demanded, eutectic Au-20Sn solder can be satisfied with above-mentions best. In this study, we tried to know the interfacial reactions between Au-20Sn solder and Cu substrate with or without ENIG plating layer In the results, Au-Cu-Sn ternary phases were formed at the Au-20Sn/Cu substrate, and Au-Ni-Sn, Au-Ni-Cu-Sn phases were formed at the Au-20Sn/ENIG substrate.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.219-221
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• 2005

Sn-9Zn solder balls were bonded to Cu, ENIG (Electroless Nickel/Immersion Gold) and electrolytic Au/Ni pads, and the effect of aging on their joint reliability was investigated. The interfacial products were different from the general reaction layer formed in a Sn-base solder. The intermetallic compounds formed in the solder/Cu joint were $Cu_{5}Zn_{8}$ and $Cu_{6}Sn_{5}$. After aging treatment, voids formed irregularly at the bottom side of the solder because of Sn diffusion into the $Cu_{5}Zn_{8}$ IMC. In the case of the solder/ENIG joint, $AuZn_{3}$ IMCs were formed at the interface. In the case of the Au/Ni/Cu substrate, an $AuZn_{3}$ IMC layer formed at the interface due to the fast reaction between Au and Zn. In addition, the $AuZn_{3}$ IMC layer became detached from the interface after reflow. When the aging time was extended to 100 h, $Ni_{5}Zn_{21}$ IMC was observed on the Ni substrate.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.2
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• pp.79-85
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• 2019

To investigate the influence of heat treatment on the growth intermetallic compounds (IMCs) at the joint interface of friction-welded Cu-Al, several heat treatments are performed at three different temperature with different times. The experiments reveal three different IMCs layers which are significantly influenced by atomic diffusion of Cu and Al with heat treatment conditions. Since the formation of these IMCs layers can affect mechanical properties of friction-welded Cu-Al interfaces, the relationship between the microstructure of IMCs layers and the tensile strength is analyzed according to heat treatment temperature and times.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.39-44
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• 1998

절연체기판으로서는 아루미나 세라믹 기판을 사용하고 전극으로서는 copper를 사용 하여 DBC공정으로 접합하여 제조하였다. 접합재료는 전처리과정을 거친다음 불활성기체 분 위기 하에서 1065~1083$^{\circ}C$의 온도로 1~60분 동안 유지시켜 접합하였다. 본 실험에서 접합 된 세라믹기판과 Cu의 계면의 SEM 관찰 결과 안정된 접합면이 생성되었으며 접합강도는 약 116MPa로 양호한 값을 얻었다. 또한 Al2O3/Copper 접합계면을 ESCA를 통하여 분석한 결과 CuAlO2의 화합물의 생성을 확인하였다. 이 DBC공정은 제조공정의 단순화를 실현시켜 대량생산에 적합함으로 전자부품 모듈생산에 유용하게 적용될 수있을것이다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1079-1082
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• 2004

CuPc와 ZnPc를 이용하여 이종 접합 구조에서의 광기전 특성을 연구하였다. $CuPc/C_{60}$, $XnPc/C_{60}$의 이종 접합 구조에서 $C_{60}$의 접합 두께 비율을 1:1 (20nm:20nm), 1:2 (20nm:40nm), 1:3 (20nm:60nm)로 가변하여 두께와 물질에 따른 광기전 특성 및 엑시톤 억제층의 효과를 분석하였다. 광원은 500W Xe lamp를 이용하였으며, 광원의 세기는 보정된 radiometer/photometer와 Si-photodiode로 dark, 10, 25, 60, 80 그리고 100mW/$cm^2$로 주사하였다.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.25-30
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• 2018

Sn-Pb solder has been used in automotive electronics for decades. However, recently, due to the environmental and health concerns, some international environmental organizations such as the end-of-life vehicle (ELV) enacted legislation banning of the Pb usage in automotive electronics. For this reason, many studies to develop and promote Pb-free soldering have been significantly reported. Meanwhile, because of flexibility and lightweight, flexible printed circuit boards (FPCBs) have been increasingly used in automotive electronics for lightweight to improve fuel efficiency and space utilization. Although the properties of lead-free solders for automotive electronics have been widely studied, there is a lack of research on the reliability performance of the lead-free solder joint on FPCB under user conditions. This study reported the properties of solder joints between Pb-free solders such as Sn3.0Ag0.5Cu, Sn0.7Cu and Sn0.5Cu0.01Al (Si), and various FPCBs finished with organic solderability preservative (OSP) and electroless nickel immersion gold (ENIG). To evaluate on joint properties and reliabilities with different solder compositions and surface-finishing materials, pull strength test, thermal shock test, and bending cycle test were performed and analyzed. After the bending cycle test of solder joint on OSP-finishing, the fractures were occurred in solder and the lifetime of Sn3.0Ag0.5Cu solder joint was the longest.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.