• Journal of Korea Foundry Society
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• v.12 no.4
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• pp.317-325
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• 1992

Diamond is the hardest material known to humans, also possesses the highest thermal conductivity and a very low thermal expansion coefficient. Therefore, these properties of diamond make them logical choices for many difficult grinding application. Bonding material is a very important factor to performance of a grinding wheel. Grinding glass constitutes one of the major application areas of diamond grinding wheels, and Cu-Sn tin bronze matrix is widely used as a metal bond of diamond wheel in grinding glass but these studies are rarely reported. The bronze test pieces excluding diamond are sintered by the method of hot sizing respectively at $600^{\circ}C$, $650^{\circ}C$, $700^{\circ}C$, with a composition(Cu-10wt%Sn) on ${\alpha}$ phase and two compositions(Cu-20wt%Sn and Cu-23wt%Sn) on ${\alpha}+{\beta}$ phase. The rupture strength of Cu-10wt%Sn is highest. The bronze bonded diamond wheels are manufactured by same conditions as the bronze test pieces. The results of grinding ratio of wheels are highest in case of Cu-10wt%Sn bonded wheel sintered at $650^{\circ}C$ and grinding power is highest in same composition sintered at $700^{\circ}C$.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.4
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• pp.83-88
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• 2018

The electromigration (EM) tests were performed at $150^{\circ}C$ with $1.5{\times}10^5A/cm^2$ conditions in order to investigate the effect of non-conductive film (NCF) trap on the electrical reliability of Cu/Ni/Sn-Ag microbumps. The EM failure time of Cu/Ni/Sn-Ag microbump with NCF trap was around 8 times shorter than Cu/Ni/Sn-Ag microbump without NCF trap. From systematic analysis on the electrical resistance and failed interfaces, the trapped NCF-induced voids at the Sn-Ag/Ni-Sn intermetallic compound interface lead to faster EM void growth and earlier open failure.

• Electronic Materials Letters
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• v.14 no.6
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• pp.678-688
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• 2018

The repeated-bending properties of Sn-0.7Cu, Sn-0.3Ag-0.7Cu (SAC0307), and Sn-3.0Ag-0.5Cu (SAC305) solders mounted on flexible substrates were studied using highly accelerated stress testing (HAST), followed by repeated-bending testing. In the Sn-0.7Cu joints, the $Cu_6Sn_5$ intermetallic compound (IMC) coarsened as the HAST time increased. For the SAC0307 and SAC305 joints, the $Ag_3Sn$ and $Cu_6Sn_5$ IMCs coarsened mainly along the grain boundary as the HAST time increased. The Sn-0.7Cu solder had a high contact angle, compared to the SAC0307 and SAC305 solders; consequently, the SAC0307 and SAC305 solder joints displayed smoother fillet shapes than the Sn-0.7Cu solder joint. The repeated-bending for the Sn-0.7Cu solder produced the crack initiated from the interface between the Cu lead wire and the solder, and that for the SAC solders indicated the cracks initiated at the surface, but away from the interface between the Cu lead wire and the solder. Furthermore, the oxide layer was thickest for Sn-0.7Cu and thinnest for SAC305, regardless of the HAST time. For the SAC solders, the crack initiation rate increased as the oxide layer thickened and roughened. $Cu_6Sn_5$ precipitated and grew along the grain and subgrain boundaries as the HAST time increased, embrittling the grain boundary at the crack propagation site.

• Journal of Powder Materials
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• v.17 no.6
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• pp.477-481
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• 2010

Cu-Sn based alloys were manufactured by gas atomization spray casting route in order to achieve a fine scale microstructure and a high tensile strength. The spray cast Cu-10Sn-2Ni-0.2Si alloy had an equiaxed grain microstructure, with no formation of brittle ${\delta}-Cu_{41}Sn_{11}$ phase. Aging treatment promoted the precipitation of finely distributed particles corresponding to ${\delta}-Ni_2Si$ intermetallic phase throughout the $\alpha$-(CuSn) matrix. The cold-rolled Cu-Sn-Ni-Si alloy had a very high tensile strength of 1200 MPa and an elongation of 5%. Subsequent aging treatment at $450^{\circ}C$ for 1h slightly reduced the tensile strength to 700 MPa and remarkably increased the elongation up to 30%. This result has been explained by coarsening the precipitates due to over aging and reducing the dislocation density due to annealing effects.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.304-308
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• 2013

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of $Cu_2ZnSnS_4$ (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/$SiO_2$/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at $500^{\circ}C$ in a $H_2S$ gas environment. $H_2S$ (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

• Korean Journal of Materials Research
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• v.23 no.3
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• pp.183-189
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• 2013

$Cu_2ZnSn(S,Se)_4$ material is receiving an increased amount of attention for solar cell applications as an absorber layer because it consists of inexpensive and abundant materials (Zn and Sn) instead of the expensive and rare materials (In and Ga) in $Cu(In,Ga)Se_2$ solar cells. We were able to achieve a cell conversion efficiency to 4.7% by the selenization of a stacked metal precursor with the Cu/(Zn + Sn)/Mo/glass structure. However, the selenization of the metal precursor results in large voids at the absorber/Mo interface because metals diffuse out through the top CZTSe layer. To avoid the voids at the absorber/Mo interface, binary selenide compounds of ZnSe and $SnSe_2$ were employed as a precursor instead of Zn and Sn metals. It was found that the precursor with Cu/$SnSe_2$/ZnSe stack provided a uniform film with larger grains compared to that with $Cu_2Se/SnSe_2$/ZnSe stack. Also, voids were not observed at the $Cu_2ZnSnSe_4$/Mo interface. A severe loss of Sn was observed after a high-temperature annealing process, suggesting that selenization in this case should be performed in a closed system with a uniform temperature in a $SnSe_2$ environment. However, in the experiments, Cu top-layer stack had more of an effect on reducing Sn loss compared to $Cu_2Se$ top-layer stack.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.31-36
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• 2012

In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.53-57
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• 2013

Although the lowering of Ag content in Sn-3.0Ag-0.5Cu is known to improve the mechanical shock reliability of the solder joint, it is also known to be detrimental to the solderbility. In this study, the quaternary alloying effect of In and the minor alloying effects of Mn and Pd on the solderability, thermal cycling and mechanical shock reliabilities of the low Ag content Sn-1.2Ag-0.7Cu solder were investigated using board-level BGA packages. The solderability of Sn-1.2Ag-0.7Cu-0.4In was proved to be comparable to that of Sn-3.0Ag-0.5Cu but its thermal cycling reliability was inferior to that of Sn-3.0Ag-0.5Cu. While the 0.03 wt% Pd addition to the Sn-1.2Ag-0.7Cu-0.4In decreased the solderability and reliabilities of solder joint, the 0.1 wt% Mn addition was proved to be beneficial especially for the mechanical shock reliability compared to those of Sn-3.0Ag-0.5Cu and Sn-1.0Ag-0.5Cu compositions. It was considered to be due that the Mn addition decreased the Young's modulus of low Ag content Pb-free solders.

• Journal of Conservation Science
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• v.30 no.4
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• pp.417-425
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• 2014

Color characteristics of the Cu-Sn alloys (bronze) in as-cast conditions were determined by reference to the $L^*$, $a^*$, $b^*$ color space. Results show that the values of $a^*$ and $b^*$ decrease with the increase in Sn levels, indicating that the colors of bronze alloys are increasingly away from red and yellow with the increase in the fraction of the ${\delta}$ phase while the opposite is true with the ${\alpha}$ phase. It has also been found in similar experiments with the Cu-22% Sn alloys that heat treatments in varying conditions produce subtle differences in their color characteristics as observed in the $L^*$, $a^*$, $b^*$ color space, due likely to the formation of various phases in different fractions.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.270-273
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• 2007

In this report, Indium-free and Indium-reduced thin film materials for solar absorber were studied in order to search alternative materials for thin film solar cell. The films of $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ were deposited using mixed binary chalcogenides powders. From the film bulk analysis result, it is observed that Cu concentration is a function of substrate temperature as well as CuSe mole ratio in the target. Under optimized conditions, $Cu_2ZnSnSe_4$ and $Cu_2ZnSnSe_2$ thin films grow with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^4$ $cm^{-1}$. $Cu_2ZnSnSe_4$ film shows a 1.5 eV band gap. On the other side, an increasing of optical band gap from 1.0 eV to 1.25 eV ($CuInSnSe_2$) is found to be proportional with an increasing of Zn concentration. All films have a p-type semiconductor characteristic with a carrier concentration in the order of $10^{14}$ $cm^{-3}$, a mobility about $10^1$ $cm^{2{\cdot}-1.}S^{-1}$ and a resistivity at the range of $10^2-10^6$ ${\Omega}{\cdot}m$.