• Korean Journal of Materials Research
• /
• v.15 no.9
• /
• pp.598-603
• /
• 2005

To develope new lead-free solders with the melting temperature close to that of Sn-37Pb$(183^{\circ}C)$, Sn-0.7Cu-5Pb-1Ga, Sn-0.7Cu-5Pb-1Ag, Sn-0.7Cu-5Pb-5Bi-1Ag, and Sn-0.7Cu-SBi-1Ag alloys were composed by adding low-netting elements such as Ga, Bi, Pb, and Ag to Sn-0.7Cu. Then the melting temperatures, microstructures, wettability, and adhesion properties of these alloys were evaluated. DSC analysis showed that the melting temperature of Sn-0.7Cu-SPb-1Ga was $211^{\circ}C$, and those of other alloys was in the range of $192\~200^{\circ}C$. Microstructures of these alloys after heat-treatment at $150^{\circ}C$ for 24 hrs were basically composed of coarsely- grown $\beta-Sn$ grains, and $Cu_6Sn_5$ and $Ag_3Sn$ intermetallic precipitates. Sn-0.7Cu-5Pb-1Ga and Sn-0.7Cu-5Pb-5Bi-1Ag showed excellent wettability, while Sn-0.7Cu-5Bi-1Ag and Sn-0.7Cu-5Pb-5Bi-1Ag revealed good adhesion strength with the Cu substrates. Among 4 alloys, Sn-0.7Cu-5Pb-5Bi-1Ag with the lowest melting temperature $(192^{\circ}C)$ and relatively excellent wettability and adhesion strength was suggested to be the best candidate solder to replace Sn-37Pb.

• Journal of the Microelectronics and Packaging Society
• /
• v.16 no.4
• /
• pp.9-15
• /
• 2009

Compared to the flip-chip process using solder bumps, Cu pillar bump technology can accomplish much finer pitch without compromising stand-off height. Flip-chip process with Cu pillar bumps can also be utilized in radio-frequency packages where large gap between a chip and a substrate as well as fine pitch interconnection is required. In this study, Cu pillars with and without Sn caps were electrodeposited and flip-chip-bonded together to form the Cu-Sn-Cu sandwiched joints. Contact resistances and die shear forces of the Cu-Sn-Cu sandwiched joints were evaluated with variation of the height of the Sn cap electrodeposited on the Cu pillar bump. The Cu-Sn-Cu sandwiched joints, formed with Cu pillar bumps of $25-{\mu}m$ diameter and $20-{\mu}m$ height, exhibited the gap distance of $44{\mu}m$ between the chip and the substrate and the average contact resistance of $14\;m{\Omega}$/bump without depending on the Sn cap height between 10 to $25\;{\mu}m$.

• Journal of Powder Materials
• /
• v.23 no.1
• /
• pp.49-53
• /
• 2016

The present study demonstrates the effect of freezing conditions on the pore structure of porous Cu-10 wt.% Sn prepared by freeze drying of $CuO-SnO_2$/camphene slurry. Mixtures of CuO and $SnO_2$ powders are prepared by ball milling for 10 h. Camphene slurries with 10 vol.% of $CuO-SnO_2$ are unidirectionally frozen in a mold maintained at a temperature of $-30^{\circ}C$ for 1 and 24 h, respectively. Pores are generated by the sublimation of camphene at room temperature. After hydrogen reduction and sintering at $650^{\circ}C$ for 2 h, the green body of the $CuO-SnO_2$ is completely converted into porous Cu-Sn alloy. Microstructural observation reveals that the sintered samples have large pores which are aligned parallel to the camphene growth direction. The size of the large pores increases from 150 to $300{\mu}m$ with an increase in the holding time. Also, the internal walls of the large pores contain relatively small pores whose size increases with the holding time. The change in pore structure is explained by the growth behavior of the camphene crystals and rearrangement of the solid particles during the freezing process.

• Journal of Electrochemical Science and Technology
• /
• v.10 no.3
• /
• pp.329-334
• /
• 2019

Sn-Cu alloy powders were prepared via a simple chemical reduction method for the negative electrode materials in lithiumion batteries. The addition of Cu can suppress the growth of Sn particles during synthetic process. Furthermore, the Cu also acts as a matrix phase against the volume change during cycling. With increasing amount of the Cu, a stable $Cu_6Sn_5$ phase formed in the Sn-Cu alloy and its cycle performance greatly enhanced depending on the Cu content. To promote the generation of the $Cu_6Sn_5$ phase, the synthesis temperature is raised to $60-100^{\circ}C$ from the ambient temperature. The Sn-Cu alloy powders prepared at elevated temperatures showed remarkable cycle performances. The Sn-Cu alloy powder obtained at $60^{\circ}C$ exhibited a significantly high volumetric capacity of over 2,000 mAh/cc at the 50th cycle.

• Journal of the Microelectronics and Packaging Society
• /
• v.7 no.1
• /
• pp.19-24
• /
• 2000

To make stacked chip packages far high-density packaging of memory chips used in workstations or PC severs, several lead-frames are to be connected vertically. Fer this purpose. Sn or Sn/Ag were electrochemically deposited on Cu lead-frames and their microstructures were examined by XRD and SEM. Then, two specimens were annealed at $250^{\circ}C$ for 10 min. and pressed to be joined. The shear stresses of joined lead-frames were measured fur comparison. In the case of Sn only, $Cu_3Sn$ was formed by the reaction of Sn and Cu lead-frames. In the case of Sn/Ag, besides $Cu_3Sn$. $Ag_3Sn$ was formed by the reaction of Sn and Ag. Compared to joined specimens made from Sn only, those made from Sn/Ag showed 1.2 times higher shear stress. This was attributed to the $Ag_3Sn$ phase formed at the joined interface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.2
• /
• pp.134-140
• /
• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• Journal of Welding and Joining
• /
• v.25 no.6
• /
• pp.78-83
• /
• 2007

The wettability of Sn-Xwt%Cu(X=$0{\sim}3wt%$) solder was evaluated with wetting balance tester. And, the intermetallic compounds(IMCs) which were formed at the interface between solders and pads were investigated by using scanning electron microscopy(SEM) and energy dispersive spectroscopy(EDS). The wetting force of Sn-0.7wt%Cu solder was higher than that of 100wt%Sn and Sn-3.0wt%Cu solder. The value of $\gamma_{fl}$ and ($\gamma_{fs}-\gamma_{ls}$) had a tendency to increase with increasing the wetting temperature. The activation energy with bare Cu pad and flux with 15% solid content was increased in the following order: Sn-0.7Cu (68.42 kJ/mol) ; Sn-3.0Cu(72.66 kJ/mol) ; Sn solder(94.53 kJ/mol). It was identified that the Cu6Sn5 phase was formed at the interface between Sn-Xwt%Cu solder and Cu pad.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.175.1-175.1
• /
• 2015

CuSn thin films were deposited by rf magnetron co-sputtering method with pure Cu and Sn metal targets with a variety of rf powers. CuSn thin films were studied with a surface profiler (alpha step), X-ray photoelectron spectroscopy (XPS), X-ray induced Auger electron spectroscopy (XAES), X-ray diffraction (XRD), and contact angle measurement. The thickness of CuSn thin films was fixed at $200{\pm}10nm$ and deposition rate was calculated by the measured with a surface profiler. From the survey XPS spectra, the characteristic peaks of Cu and Sn were observed. Therefore, CuSn thin films were successfully synthesized on the Si (100) substrate. The oxidation state and chemical environment of Cu and Sn were investigated with the binding energy regions of Cu 2p XPS spectra, Sn 3d XPS spectra, and Cu LMM Auger spectra. Change of the crystallinity of the films was observed with XRD spectra. Using contact angle measurement, surface free energy (SFE) and wettability of the CuSn thin films were studied with distilled water (DW) and ethylene glycol (EG).

• Journal of the Microelectronics and Packaging Society
• /
• v.15 no.4
• /
• pp.17-24
• /
• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.

• Korean Journal of Materials Research
• /
• v.17 no.8
• /
• pp.402-407
• /
• 2007

In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.