• Title/Summary/Keyword: Cu nucleation

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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A study on $CeO_2$ buffer layer on biaxially textured Ni-3%W substrate deposited by electron beam evaporation with high deposition rate (전자빔 증착법으로 이축배향된 Ni-3%W 기판 위에 높은 증착률로 제조된 $CeO_2$ 완충층에 대한 연구)

  • Kim, H.J.;Lee, J.B.;Kim, B.J.;Hong, S.K.;Lee, H.J.;Kwon, B.G.;Lee, H.G.;Hong, G.W.
    • Progress in Superconductivity and Cryogenics
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    • v.13 no.1
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    • pp.1-5
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    • 2011
  • [ $CeO_2$ ]has been widely used for single buffer layer of coated conductor because of superior chemical and structural compatibility with $ReBa_2Cu_3O_{7-{\delta}}$(Re=Y, Nd, Sm, Gd, Dy, Ho, etc.). But, the surface of $CeO_2$ layer showed cracks because of the large difference in thermal expansion coefficient between metal substrate and deposited $CeO_2$ layer, when thickness of $CeO_2$ layer exceeds 100 nm on the biaxially textured Ni-3%W substrate. The deposition rate has been limited to be less than 6 $\AA$/sec in order to get a good epitaxy. In this research, we deposited $CeO_2$ single buffer layers on biaxially textured Ni-3%W substrate with 2-step process such as thin nucleation layer(>10 nm) with low deposition rate(3 $\AA$/sec) and thick homo epitaxial layer(>240 nm) with high deposition rate(30 $\AA$/sec). Effect of deposition temperature on degree of texture development was tested. Thick homo epitaxial $CeO_2$ layer with good texture without crack was obtained at $600^{\circ}C$, which has ${\Delta}{\phi}$ value of $6.2^{\circ}$, ${\Delta}{\omega}$ value of $4.3^{\circ}$ and average surface roughness(Ra) of 7.2 nm within $10{\mu}m{\times}10{\mu}m$ area. This result shows the possibility of preparing advanced Ni substrate with simplified architecture of single $CeO_2$ layer for low cost coated conductor.

Effect of Cooling Rate and the Amount of P Addition on the Refinement of Primary Si in Hypereutectic Al-Si Alloy (과공정 Al-Si 합금의 초정 Si 미세화에 미치는 냉각속도와 P 첨가량의 영향)

  • Hahn, Sang-Bong;Kim, Ji-Hun;You, Bong-Sun;Park, Won-Wook;Ye, Byung-Joon
    • Journal of Korea Foundry Society
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    • v.17 no.4
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    • pp.347-355
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    • 1997
  • It is well known that the coarse primary Si in hypereutectic Al-Si alloys deteriorate castability, machinability, and mechanical properties. So, many treatment has been tried to refine the primary Si increasing cooling rate and adding refinement agent. Therefore. the purpose of our work was the observation of the effect on the refinement of primary Si and the analysis of the trend to apply to the casting process by changing the amount of P addition and the cooling rate while fixing the temperature at $750^{\circ}C$ of P addition and the type of AlCuP. In the condition of amount of P addition was fixed, primary Si was finer as cooling rate increased but in case of cooling rate was fixed, the effect of refinement was resisted as incersed the amount of P addition. At a relatively slow cooling rate of $22^{\circ}C/sec$, refinement was governed by the amount of P addition rather than cooling rate. At elevated cooling rate of $51^{\circ}C/sec$ and $99^{\circ}C/sec$, the undercooling due to faster cooling rate promoted nucleation of primary Si rather than P addition more significantly.

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Effects of Alloying Elements on Sticking Occurring During Hot Rolling of Ferritic Stainless Steels (페라이트계 스테인리스강의 열간압연 시 발생하는 Sticking에 미치는 합금원소의 효과)

  • Ha, Dae Jin;Kim, Yong Jin;Lee, Jong Seog;Lee, Yong Deuk;Lee, Sunghak
    • Korean Journal of Metals and Materials
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    • v.46 no.9
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    • pp.593-603
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    • 2008
  • In this study, effects of alloying elements on the sticking occurring during hot rolling of five kinds of ferritic STS430J1L stainless steels were investigated by analyzing high-temperature hardness and oxidation behavior of the rolled steels. Hot-rolling simulation tests were conducted by a high-temperature wear tester which could simulate actual hot rolling. The simulation test results revealed that the sticking process proceeded with three stages, i.e., nucleation, growth, and saturation. Since the hardness continuously decreased as the test temperature increased, whereas the formation of Fe-Cr oxides in the rolled steel surface region increased, the sticking of five stainless steels was evaluated by considering both the high-temperature hardness and oxidation effects. The addition of Zr, Cu, or Si had a beneficial effect on the sticking resistance, while the Ni addition did not show any difference in the sticking. Particularly in the case of the Si addition, Si oxides formed first in the initial stage of high-temperature oxidation, worked as initiation sites for Fe-Cr oxides, accelerated the formation of Fe-Cr oxides, and thus raised the sticking resistance by about 10 times in comparison with the steel without Si content.

STRATEGIC RESEARCH AT ORNL FOR THE DEVELOPMENT OF ADVANCED COATED CONDUCTORS: PART - I

  • Christen, D.K.;Cantoni, C.;Feenstra, R.;Aytug, T.;Heatherly, L.;Kowalewski, M.M.;List, F.A.;Goyal, A.;Kroeger, D.M.
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2002.02a
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    • pp.339-339
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    • 2002
  • In the RABiTS approach to coated conductor development, successful (both economic and technological) depends on the refinement and optimization of each of three important components: the metal tape substrate, the buffer layer(s), and the HTS layer. Here we will report on the ORNL approach and progress in each of these areas. - Most applications will require metal tapes with low magnetic hysteresis, mechanical strength, and excellent crystalline texture. Some of these requirements are competing. We report on progress in obtaining a good combination of these characteristics on metal alloys of Ni-Cr and Ni-W. - The deposition of appropriate buffer layers is a crucial step. Recently, base research has shown that the presence of a stable sulfur superstructure present on the metal surface is needed for the nucleation and epitaxial growth of vapor-deposited seed buffer layers such as YSZ, CeO$_2$ and SrTiO$_3$. We report on the details and control of this superstructure for nickel tapes, as well as recent results for Cu and Ni-13%Cr. - Processes for deposition of the HTS coating must economically provide large values of the figure-of-merit for conductors, current x length. At ORNL, we have devoted efforts to a precursor/post-annealing approach to YBCO coatings, for which the deposition and reaction steps are separate. We describe motivation for and progress toward developing this approach. - Finally, we address some issues for the implementation of coated conductors in real applications, including the need for texture control and electrical stabilization of the HTS coating.

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New Ruthenium Complexes for Semiconductor Device Using Atomic Layer Deposition

  • Jung, Eun Ae;Han, Jeong Hwan;Park, Bo Keun;Jeon, Dong Ju;Kim, Chang Gyoun;Chung, Taek-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.363-363
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    • 2014
  • Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

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Petrology of Host Body of Feldspar Deposits in Jechon Ganites (장석광상 모암인 제천반상화강암의 암석학적 특성)

  • Lee, Han-Yeang;Kim, Dai-Oap;Park, Joong-Kwon
    • Journal of the Korean earth science society
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    • v.22 no.5
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    • pp.405-414
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    • 2001
  • Jecheon granite can be divided into two types; porphyritic granite (K-feldspar megacryst bearing) and medium-grained biotite granite. Porphyritic granite, host body of feldspar deposits, is 8${\sim}$11 km in diameter and about 80 $km^{2}$ in area. It mainly contains K-feldspar, plagioclase, biotite and quartz, and magnetite, zircon, sphene and apatite are accessary minerals. Enclosed minerals in K-feldspar megacryst with 3${\sim}$10 cm in diameter are hornblende, plagioclase, quartz, magnetite, apatite, sphene and zircon. Mafic enclaves mainly consisting of hornblende, plagioclase and quartz are frequently observed in porphrytic granite. Medium-grained biotite granite consists of K-feldspar, plagioclase, biotite and hornblende as main, and hematite, muscovite, apatite and zircon as accessary minerals. Core and rim An contents of plagioclase from porphyritic granite, medium biotite granite, K-feldspar megacryst, and mafic enclave are 36 and 21, 40 and 32, 37 and 32, and 43 and 36, respectively. $X_{Fe}$ values of hornblende are 0.57 at biotite granite, 0.51 at K-feldspar mehacryst and 0.45 at mafic enclave. $X_{Fe}$ values of biotite and hornblende are homogeneous without chemical zonation. K-feldspar megacryst shows end member of pure composition with exsolved thin lamellar pure albites. Characteristics of mineral compositions and petrography indicate porphyritic granite is igneous origin and medium-grained biotite granite comes from the same source of magma; biotite granite is initiated to solidly and from residual melt porphyritic granite can be formed. Possibly K-feldspar megacrysts are formde under H$_{2}$O undersaturation condition and near K-feldspar solidus curve temperature; growth rate is faster than nucleation rate. Mafic enclaves are thought to be mingled mafic magma in felsic magma, which is formed from compositional stratigraphy. Estimated equilibrium temperature and pressure for medium-grained biotite granite are about $800^{\circ}C$ and 4.83${\sim}$5.27 Kb, respectively.

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