• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.341-344
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• 2004

The superconducting properties of $YBa_2Cu_3O_x$ with different content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as an additive in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and $BaPbO_3$ would be the main phase in the sample. Therefore, $BaPbO_3$ was chosen as the impurity additive for the comparative study. The single phase of $BaPbO_3$ was synthesized by the simple way from both mixtures of $BaCO_3$ and PbO, $BaCO_3$ and $PbO_2$. Different contents of $BaPbO_3$ (10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the Phase analysis in the XRD patterns it was proved that there was no reaction between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as an impurity additive in $YBa_2Cu_3O_x$.

• Journal of the Speleological Society of Korea
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• no.78
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• pp.17-22
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• 2007

The melting temperature and critical temperature (Tc) of $YBa_2Cu_3O_x$ with deferent content impurities of PbO and $BaPbO_3$ were studied. When the PbO was used as addition in $YBa_2Cu_3O_x$, although the melting point could be reduced, the superconductivity (the transition wide, ${\Delta}T_c$) became poor. From the XRD pattern of the sintered mixture of $YBa_2Cu_3O_x$ and PbO it was known that there is a reaction between $YBa_2Cu_3O_x$ and PbO, and the product is $BaPbO_3$. In the process of the reaction the superconducting phase of $YBa_2Cu_3O_x$ was decreased and in the sample $BaPbO_3$ became the main phase. Therefore the superconductivity was reduced. $BaPbO_3$ was chosen as the impurity for the comparative study. The single phase $BaPbO_3$ was synthesized by the simple way from both mixtures of $BaCO_3$ and PbO, $BaCO_3$ and $PbO_2$. Deferent contents of $BaPbO_3$ (10%, 20%, 30%) were added in the $YBa_2Cu_3O_x$. By the phase analysis in the XRD patterns it was proved that there were not reactions between $YBa_2Cu_3O_x$ and $BaPbO_3$. When $BaPbO_3$ was used as impurity in $YBa_2Cu_3O_x$ the superconductivity was much better than PbO as impurity in $YBa_2Cu_3O_x$. But the melting point of $YBa_2Cu_3O_x$ with $BaPbO_3$ could not be found when the temperature was lower than $1000^{\circ}C$ in the DTA measurement.

• Progress in Superconductivity
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• v.1 no.2
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• pp.135-140
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• 2000

Distribution of Pr ions between Y- and Ba-site of the $Y(Ba_{1-Xn}Pr_{Xn})_2Cu_3O_y$ ($0{\leq}Xn{\leq}{0.3}$, Xn : nominal composition) material prepared by the solid state reaction method was studied. Although the samples have narrow superconducting transition, tiny peaks of $Y_2BaCuO_5$ impurity phase are included in the x-ray diffraction patterns suggesting that some of the Pr ions are entered into the Y-site. The distribution of Pr ions between Y- and Ba-site was determined by measuring the mass fraction of YBCO and $Y_2BaCuO_5$ phase for each sample through the Rietveld analysis of the x-ray diffraction data. About 60 % of Pr ions occupy the Y-site regardless of the Pr content. Various superconducting parameters such as the oxygen content and the hole concentration etc. are compared before and after the impurity correction.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.195-196
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• 2007

In this paper, we investigated impurity content of carbon nanotube reinforced semiconductive shield materials and conventional semiconductive shield materials in power cables. To reduce impurity content, we used solution compounding method that an adding process of extra additives neglected. Impurity content measured through ICP-AES(Inductively Coupled Plasma Atomic Emission Spectroscopy). Also, impurity measured Ca, Cu, Fe, Al, Mg, Na, K, Si in eight. As a result, carbon nanotube reinforced semiconductive shield materials is lower than conventional semiconductive shield materials in impurity content by ICP-AES.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.841-842
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• 2013

• Journal of Conservation Science
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• v.32 no.3
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• pp.313-320
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• 2016

The aim of this study was to obtain information on the ancient material of cast bronze through an investigation of the microstructure and impurity characteristics of the casting. Three Koryo bronze coins were analyzed using an optical microscope, scanning electron microscope, and electron dispersive X-ray analyses were used to determine the composition of the specimens. The three coins had 4 phases: ${\alpha}phase$, ${\delta}phase$, Pb, and impurities ($Cu_2S$). $Cu_2S$ was found to exist near Pb or in ${\delta}phase$. $Cu_2S$ is the inter mediate product of copper ore refining. Therefore, the copper ore was not completely refined. To find out the characteristic of $Cu_2S$, we melt 1)Koryo bronze coin and 2)$Cu_2S$ and Pb powder at 1273 K. The reaction between $Cu_2S$ and Pb at 1273 K yielded fine Cu and black gas, which was identified to be PbS and is presented below: $Cu_2S+Pb{\rightarrow}PbS{\uparrow}+2Cu$.

• Journal of the Korean Vacuum Society
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• v.8 no.2
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• pp.121-126
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• 1999

Cu thin film was deposited by a self-ion assisted beam source (SIAB) and the assessment of the Cu films was given. Some characteristics of the source and the experimental procedure are described at various conditions such as total power, ionization efficiency, and ion current vs. deposition rate. The dependence of crystalline structure, impurity concentration, and resistivity of the Cu films deposited by SIAB on acceleration voltage are discussed.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.161-164
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• 2001

Transmuted impurity atoms formed in neutron-irradiated ZnO thin films were theoretically identified first and then experimentally confirmed by Photoluminescence (PL). ZnO thin films grown by plasma-assisted molecular beam epitaxy were irradiated by neutron beam at room temperature. Among eight isotropes naturely exiting in ZnO films, only $^{64}Zn$, $^{68}Zn$, $^{70}Zn$ and $^{18}O$ were expected to transmute into $^{65}Cu$, $^{69}Ga$, $^{71}Ga$ and $^{19}F$, respectively. The concentrations of these transmuted atoms were estimated by considering natural abundance, neutron fluence, and neutron cross section. The neutron-irradiated ZnO thin films were characterized by PL. In the PL spectra of these ZnO thin film, the Cu-related PL peaks were seen, but the Ga- or F-associated PL peaks were absent. This observation demonstrates the existence of $^{65}Cu$ in the ZnO. In this paper, emission mechanism of Cu impurities wil1 be described and the reason for the absence of the Ga- or F-associated PL peaks will be discussed.

• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.217-222
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• 1999

The pick up impurity was studied for preparing the NiCuZn ferrite powder by a ball milling method that usually uses in the industrial ceramic process. The raw materials of NiO, CuO, ZnO, and $Fe_2O_3$ powder were weighted according to various spinel composition and mixed for 18 hrs by a wet ball milling method after that the slurry was followed by spray dried and calcined at $700^{\circ}C$ 3 hrs. The calcined NCZF powder was finally ball milled during 65 hrs as same method. The stainless steel ball and jar are used as mixing and milling equipment and the solid concentration of the slurry was 25 vol%. The impurities, stainless steel pickup, were effected by the composition of raw materials especially iron oxide, nickel oxide in the mixing process and by the rate of calcine of NiCuZn ferrite in final milling process. The empirical equation of stainless steel pickup was driven in the wet ball milling system. Finally, the composition of NiCuZn ferrite could be controlled by the empirical equation.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.524-527
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• 2007

[ $Bi_2Sr_2Ca_{n-1}Cu_nO_x$ ](n=0, 1, 2) thin films have been fabricated by co-deposition at an ultra-low growth rate using ion beam sputtering(IBS) method. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about % K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $ CaCuO_2$ was observed in all of the obtained films.