• Proceedings of the Korean Environmental Sciences Society Conference
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• 2019.10a
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• pp.83-83
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• 2019

Increasing the CO₂ concentration in the atmosphere induce high temperature and rising sea levels. So the technology that capture and reuse of the CO₂ have been recently become popular. Among other methods, CRR(CO2₂ reduction reaction) is typical method of CO₂ reusing. Electrocatalyst can show more higher efficiencies in CRR than photocatalyst because it doesn't use nature source. Nowadays, finding high efficient electrocatalyst by controlling electronic (affected by stoichiometry) and geometric (affected by atomic arrangement) factors are very important issues. Mono-atomic electro-catalyst has limitations on controlling binding energy because each intermediate has own binding energy range. So the Multi-metallic electro-catalyst is important to stabilize intermediate at the same time. Carbon monoxide(CO) which is our target product and important feedstock of useful products. Au is known for the most high CO production metal. With copper, Not only gold/copper has advantages which is they have FCC packing for easily forming solid solution regardless of stoichiometry but also presence of adsorbed CO on Cu promotes the desorption of CO on Au because of strong repulsion. And gold/copper bi-metal catalyst can show high catalytic activity(mass activity) although it has low selectivity relatively Gold. Actually, multi-metallic catalyst structure control method is limited in the solution method which is takes a lot of time. In here, we introduce CTS(carbo thermal shock) method which is using heat to make MMNP in a few seconds for making gold-copper system. This method is very simple and efficient in terms of time(very short reaction time and using carbon substrate as a direct working electrode) and increasing reaction sites(highly dispersed and mixing alloy structures). Last one is easy to control degree of mixing and it can induce 5 or more metals in one alloy system. Gold/copper by CTS can show higher catalytic activity depending on metal ratio which is altered easily by changing simple variables. The ultimate goals are making CO₂ test system by CTS which can check the selectivity depending on metal types in a very short time.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.363-363
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• 2014

Ruthenium (Ru) has attractive material properties due to its promising characteristics such as a low resistivity ($7.1{\mu}{\Omega}{\cdot}cm$ in the bulk), a high work function of 4.7 eV, and feasibility for the dry etch process. These properties make Ru films appropriate for various applications in the state-of-art semiconductor device technologies. Thus, it has been widely investigated as an electrode for capacitor in the dynamic random access memory (DRAM), a metal gate for metal-oxide semiconductor field effect transistor (MOSFET), and a seed layer for Cu metallization. Due to the continuous shrinkage of microelectronic devices, better deposition processes for Ru thin films are critically required with excellent step coverages in high aspect ratio (AR) structures. In these respects, atomic layer deposition (ALD) is a viable solution for preparing Ru thin films because it enables atomic-scale control of the film thickness with excellent conformality. A recent investigation reported that the nucleation of ALD-Ru film was enhanced considerably by using a zero-valent metallorganic precursor, compared to the utilization of precursors with higher metal valences. In this study, we will present our research results on the synthesis and characterization of novel ruthenium complexes. The ruthenium compounds were easy synthesized by the reaction of ruthenium halide with appropriate organic ligands in protic solvent, and characterized by NMR, elemental analysis and thermogravimetric analysis. The molecular structures of the complexes were studied by single crystal diffraction. ALD of Ru film was demonstrated using the new Ru metallorganic precursor and O2 as the Ru source and reactant, respectively, at the deposition temperatures of $300-350^{\circ}C$. Self-limited reaction behavior was observed as increasing Ru precursor and O2 pulse time, suggesting that newly developed Ru precursor is applicable for ALD process. Detailed discussions on the chemical and structural properties of Ru thin films as well as its growth behavior using new Ru precursor will be also presented.

• Geophysics and Geophysical Exploration
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• v.17 no.4
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• pp.247-252
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• 2014

Gagok Mine, which is skarn deposits, includes sulfide minerals such as sphalerite, galena, chalcopyrite, and pyrrhotite. To explore these minerals, spectral induced polarization (SIP) is relatively effective compared to other geophysical exploration methods because there is a strong IP effect caused by electrode polarization. In the SIP, the chargeability related to sulfide mineral contents and the time constant related to the grain size of the minerals are obtained. For this reason, we aim to compare difference in the mineralized characteristics between two orebodies in the Gagok Mine by using the chargeability and the time constant. For this study, we sampled ores from the south of Wolgok orebody and the north of Sungok orebody. In order to recognize the mineralization characteristics, the metal content of the samples was measured by a potable XRF and the SIP data of the samples were acquired by using a laboratory SIP measurement system. As a result, the metals in the samples such as Pb, Zn, Cu, and Fe were detected by the portable XRF measurement. In particular, the Fe and Zn contents were far higher than the other metals. The Fe and the Zn were caused by the sphalerite and the pyrrhotite through microscopy. The Wolgok orebody had higher sulfide mineral contents than the Sungok orebody and the result corresponded with the chargeability result. However, we considered that the Sungok orebody had a larger sulfide mineral grain size than the Wolgok orebody because the time constant of the Sungok orebody was larger.