• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.561-561
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• 2012

Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as fast electron mobility, high thermal conductivity and optical transparency, and also found many applications such as field-effect transistors (FET), energy storage and conversion, optoelectronic device, electromechanical resonators and chemical sensors. Several techniques have been developed to form the graphene. Especially chemical vapor deposition (CVD) is a promising process for the large area graphene. For the electrically isolated devices, the graphene should be transfer to insulated substrate from Cu or Ni. However, transferred graphene has serious drawback due to remaining polymeric residue during transfer process which induces the poor device characteristics by impurity scattering and it interrupts the surface functionalization for the sensor application. In this study, we demonstrate the characteristics of solution-gated FET depending on the removal of polymeric residues. The solution-gated FET is operated by the modulation of the channel conductance by applying a gate potential from a reference electrode via the electrolyte, and it can be used as a chemical sensor. The removal process was achieved by several solvents during the transfer of CVD graphene from a copper foil to a substrate and additional annealing process with H2/Ar environments was carried out. We compare the properties of graphene by Raman spectroscopy, atomic force microscopy(AFM), and X-ray Photoelectron Spectroscopy (XPS) measurements. Effects of residual polymeric materials on the device performance of graphene FET will be discussed in detail.

• Bulletin of the Korean Chemical Society
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• 제35권1호
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• pp.182-188
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• 2014

Three new transition metal complexes based on Ozagrel $[Cu(Ozagrel)]_n$ (1), $[Zn(Ozagrel)(Cl)]_n$ (2), ${[Mn_2-(Ozagrel)(1,4-ndc)_2]{\cdot}(H_2O)}_n$ (3), (Ozagrel = 3-(4-((1H-imidazol-1-yl)methyl)phenyl)acrylic acid; 1,4-ndc = 1,4-Naphthalenedicarboxylic acid) have been hydrothermally synthesized and characterized by elemental analyse, IR, TG, PXRD, electrochemical analysis and single crystal X-ray diffraction. X-ray structure analysis reveals that 1 and 3 are 3D coordination polymers, while complex 2 is a two-dimensional network polymer, the 2D layers are further packed into 3D supramolecular architectures that are connected through hydrogen bonds. The electrochemistry of 1-3 was studied by cyclic voltammetry in methanol and water using a glassy carbon working electrode. Also, thermal decomposition process and powder X-ray diffraction of complexes were investigated.

• Journal of Electrochemical Science and Technology
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• 제2권3호
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• pp.168-173
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• 2011

The availability, low toxicity, and high degree of technological development make silicon the most likely material to be used in solar cells, the cost of solar cells depends entirely on cost of high purity silicon production. The present work was conducted to electrodeposite of silicon from $K_2SiF_6$, an inexpensive raw material prepared from fluorosilicic acid ($H_2SiF_6$) produced in Iraqi Fertilizer plants, and using inexpensive graphite material as cathode electrode. The preparation of potassium fluorosilicate was performed at ($60^{\circ}C$) in a three necks flask provided with a stirrer, while the electro deposition was performed at $750^{\circ}C$ in a three-electrodes configuration with melt containing in graphite pot. High purity potassium fluorosilicate (99.25%) was obtained at temperature ($60^{\circ}C$), molar ratio-KCl/$H_2SiF_6$(1.4) and agitation (600 rpm). Spongy compact deposits were obtained for silicon with purity not less than (99.97%) at cathode potential (-0.8 V vs. Pt), $K_2SiF_6$ concentration (14% mole percent) with grain size (130 ${\mu}m$) and level of impurities (Cu, Fe and Ni) less than (0.02%).

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.546-549
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• 2009

In this paper, we investigated the effects of different source/drain (S/D) electrode materials in thin film transistors (TFTs) based on indium-gallium-zinc oxide (IGZO) semiconductor. A transfer length and effective resistances between S/D electrodes and amorphous IGZO thin-film transistors were examined. Intrinsic TFT parameters were extracted by the transmission line method (TLM) using a series of TFTs with different channel lengths measured at a low drain voltage. The TFTs fabricated with Cu S/D electrodes showed the lowest contact resistance and transfer length indicating good ohmic characteristics, and good transfer characteristics with a field-effect mobility (${\mu}_{FE}$) of 10.0 $cm^2$/Vs.

• 대한화학회지
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• 제57권5호
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• pp.568-573
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• 2013

A selective and sensitive method for simultaneous determination of copper in blood by adsorptive differential pulse cathodic stripping voltammetry is presented. The procedure involves an adsorptive accumulation of Cu(II)-ETSC (4- ethyl-3-thiosemicarbazide) on a hanging mercury drop electrode, followed by a stripping voltammetry measurement of reduction current of adsorbed complex at about -715 mV. The optimum conditions for the analysis of copper (II) ion are : pH 10.3, concentration of 4-ethyl-3-thiosemicarbazide $3.25{\times}10^{-6}$ M and an accumulation potential of -100 mV. The peak current is proportional to the concentration of copper over the range 0.003-125 ng/mL with a detection limit of 0.001 ng/mL and an accumulation time of 60 s. Moreover, with the use of the proposed method, there is a considerable improvement in the detection limit, the linear dynamic range and the deposition time, compared with the methods of adsorptive stripping voltammetry for the determination of copper. The developed method was validated by analysis of whole blood certified reference materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.174-175
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• 2007

A programmable metallization cell (PMC) memory structure with copper-saturated GeTe solid electrolyte films doped by nitrogen was prepared on a TiW bottom electrode by a co-sputtering technique at room temperature. The $Ge_{45}Te_{55}$ solid electrolyte films deposited with various $N_2$/Ar flow ratios showed an increase of crystallization temperature and especially, the electrolyte films deposited at $N_2$/Ar ratios above 30% showed a crystallization temperature above $400^{\circ}C$, resulting in surviving in a back-end process in semiconductor memory devices. The device with a 200 nm thick $Cu_{1-x}(Ge_{45}Te_{55})_x$ electrolyte switches at 1 V from an "off " state resistance, $R_{off}$, close to $10^5$ to an "on" resistance state, Ron, more than 20rders of magnitude lower for this programming current.

• 한국정밀공학회지
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• 제21권11호
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• pp.186-194
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• 2004

In this research, microfabrication technique using localized electrochemical deposition (LECD) with ultra short pulses is presented. Electric field is localized near the tool tip end region by applying a few hundreds of nano second pulses. Pt-Ir tip is used as a counter electrode and copper is deposited on the copper substrate in 0.5 M CuSO$_4$ and 0.5 M H$_2$SO$_4$ electrolyte. The effectiveness of this technique is verified by comparison with LECD using DC voltage. The deposition characteristics such as size, shape, surface, and structural density according to applied voltage and pulse duration are investigated. The proper condition is selected from the results of the experiments. Micro columns less than 10 $\mu$m in diameter are fabricated using this technique. The real 3D micro structures such as micro pattern and micro spring can be fabricated by this method. It is suggested that presented method can be used as an easy and inexpensive method for fabrication of microstructure with complex shape.

• 대한금속재료학회지
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• 제47권4호
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• pp.248-255
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• 2009

A micro thermoelectric device was processed by electroplating the n-type Bi-Te nanowires and ptype Sb-Te nanowires into an alumina template with 200 nm pores. Power generation characteristics of the micro devices composed of the Bi-Te nanowires, the Sb-Te nanowires, and both the Bi-Te and the Sb-Te nanowires were analyzed with applying a temperature difference of $40^{\circ}C$ across the devices along the thickness direction. The n-type Bi-Te and the p-type Sb-Te nanowire devices exhibited thermoelectric power outputs of $3.8{\times}10^{-10}W$ and $4.8{\times}10^{-10}W$, respectively. The output power of the device composed of both the Bi-Te and the Sb-Te nanowires decreased to $1.4{\times}10^{-10}W$ due to a large electrical resistance of the Cu electrode connecting the Bi-Te nanowire array with the Sb-Te nanowire array.

• Journal of Electrochemical Science and Technology
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• 제14권1호
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• pp.66-74
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• 2023

In this study, a new potentiometric sensor selective to copper(II) ions was developed and characterized. The developed sensor has a polymeric membrane and contains 4.0% electroactive material (ionophore), 33.0% poly(vinyl chloride) (PVC), 63.0% bis(2-ethylhexyl)sebacate (BEHS) and 1.0% potassium tetrakis(p-chlorophenyl)borate (KTpClPB). This novel copper(II)-selective sensor exhibits a Nernstian response over a wide concentration range from 1.0×10^-6 to 1.0×10^-1 mol L^-1 with a slope of 29.6 (±1.2) mV decade^-1, and a lower detection limit of 8.75×10-7 mol L^-1. The sensor, which was produced economically by synthesizing the ionophore in the laboratory, has a good selectivity and repeatability, fast response time and stable potentiometric behaviour. The potential response of the sensor remains unaffected of pH in the range of 5.0-10.0. Based on the analytical applications of the sensor, we showed that it can be used as an indicator electrode in the quantification of Cu²⁺ ions by potentiometric titration against EDTA, and can also be successfully utilized for the determination of copper(II) ions in different real samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.431-431
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• 2016

Typical Cu(In,Ga)Se2 (CIGS)-based solar cells have a buffer layer between CIGS absorber layer and transparent ZnO front electrode, which plays an important role in improving the cell performance. Among various buffer materials, chemical bath deposition (CBD)-ZnS is being steadily studied to alternative to conventional CdS and the efficiency of CBD-ZnS/CIGS solar cell shows the comparable values with that of CdS/CIGS solar cell. The intriguing thing is that reversible changes occur after exposure to illumination due to the metastable defect states in completed ZnS/CIGS solar cell, which induces an improvement of solar cell performance. Thus, it implies that the understanding of metastable defects in CBD-ZnS/CIGS solar cell is important issue. In this study, we fabricate the ITO/i-ZnO/CBD-ZnS/CIGS/Mo/SLG solar cells by controlling the NH4OH mole concentration (from 2 M to 3.5 M) of CBD-ZnS buffer layer and observe their conversion efficiency with and without light soaking for 1 hr. From the results, NH4OH mole concentration and light exposure can significantly affect the CBD-ZnS/CIGS solar cell performance. In order to investigate that which layer can contain metastable defect states to influence on solar cell performance, impedance spectroscopy and capacitance profiling technique with exposure to illumination have been applied to CBD-ZnS/CIGS solar cell. These techniques give a very useful information on the density of states within the bandgap of CIGS, free carriers density, and light-induced metastable effects. Here, we present the rearranged charge distribution after exposure to illumination and suggest the origin of the metastable defect states in CBD-ZnS/CIGS solar cell.