• 한국재료학회지
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• 제20권12호
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• 한국재료학회지
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• 제7권10호
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• pp.856-862
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• 1997

박막형 CdTe/CdS 태양전지의 배면전극(back contacts)물질로서 Cu도핑된 ZnTe 박막(ZnTe:Cu)을 전착법(electroplating)으로 제조하는 연구를 수행하였다. Sulfate계의 전해질 수용액에서 CdTe 기판과 투명전극으로 코팅된 유리(In$_{2}$O$_{3}$: Sn, ITO)기판 위에 ZnTe 박막을 코팅하는 방법으로써 potentiostat와 기판(cathode), Pt counter electrode, Ag/AgCI 표준전극으로 구성된 장치를 사용하여 pH=2.5-4, T=70-8$0^{\circ}C$, 0.02M $Zn^{2+}$ 1x$10^{-4}$M TeO$_{2}$, 0.2M $K_{2}$SO$_{4}$조건에서 -0.800 Vs~-0.975 V 범위의 전압(V$_{a}$ )에 걸쳐 실험하였다. ITO박막을 기판으로 사용하여 cyclic voltammogram을 작성한 결과 약 -0.50 V 에서 Te환원 peak이 나타났다. Auger electron spectroscopy (AES)로 조성분석한 결과 표면에서 Zn signal이 강하게 나왔고 시편의 두께에 따라 Zn의 signal감소하는 반면 Cd signal은 증가하는 것이 확인되었다. SEM 사진으로부터 ZnTe의 표면이 작은 입자 (0.2$\mu\textrm{m}$ 이하)로 구성되어 있으며 낮은 V$_{a}$ 에서는 입자가 작아지면서 조직이 치밀해짐이 관찰되었다. Optical transmission방법에 의하여 ITO기판위에 입혀진 박막의 밴드갭은 2.5 eV으로 측정되었다. 수용액중의 Cu$_{2+}$와 triethanolamine(TEA)은 산성용액에서 착물형성이 이루어지지 않았으며 1,10-phenanthroline과는 pH=2에서도 착물이 형성되었다.

• Current Photovoltaic Research
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• 제3권3호
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• pp.85-90
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• 2015

Two-step processes for preparing $Cu(In,Ga)Se_2$ absorber layers consist of precursor layer formation and subsequent annealing in a Se-containing atmosphere. Among the various deposition methods for precursor layer, the nonvacuum (wet) processes have been spotlighted as alternatives to vacuum-based methods due to their potential to realize low-cost, scalable PV devices. However, due to its porous nature, the precursor layer deposited on Mo substrate by nonvacuum methods often suffers from thick $MoSe_2$ formation during selenization under a high Se vapor pressure. On the contrary, selenization under a low Se pressure to avoid $MoSe_2$ formation typically leads to low crystal quality of absorber films. Although TiN has been reported as a diffusion barrier against Se, the additional sputtering to deposit TiN layer may induce the complexity of fabrication process and nullify the advantages of nonvacuum deposition of absorber film. In this work, Mo oxide layers via thermal oxidation of Mo substrate have been explored as an alternative diffusion barrier. The morphology and phase evolution was examined as a function of oxidation temperature. The resulting Mo/Mo oxides double layers were employed as a back contact electrode for $CuInSe_2$ solar cells and were found to effectively suppress the formation of $MoSe_2$ layer.

• 한국재료학회지
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• 제15권8호
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• pp.528-535
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• 2005

It is inclined to increase that use of hazardous substances such as lead(Pb), mercury (Hg), cadmium(Cd) etc. are prohibited in the electronics according to environmental friendly policies of an advanced nation for protecting environment of earth. As this reasons, many researches for ensuring the reliability were proceeding in Pb free soldering process. n the flux remains on the PCB(printed circuit board) in the soldering process or the electronics exposed to corrosive environment, it becomes the reasons of breakdown or malfunction of the electronics caused by corrosion. Therefore in this studies we researched the polarization and Tafel properties of Sn40Pb and SnCu system solders based on the electrochemical theory. The experimental polarization curves were measured in distilled ionized water and 1 mole $3.5 wt\%$ NaCl electrolyte of $40^{\circ}C$, pH 7.5. Ag/AgCl and graphite were utilized by reference and counter electrodes, respectively. To observe the electrochemical reaction, polarization test was conducted from -250mV to +250mV. From the polarization curves composed of anodic and cathodic curves, we obtained Tafel slop, reversible electrode potential(Ecorr) and exchange current density((cow). In these results, we compared the corrosion rate of SnPb and SnCu solders.

• 한국정보통신학회논문지
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• 제14권3호
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• pp.699-706
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• 2010

경사진 빗살무늬 변환기 필터를 제작하기 위하여 Langasite 기판위에 두 가지 형태의 빗살무늬 변환기를 형성시켰으며, 전극재료로는 Al-Cu를 사용하였다. 모의실험을 바탕으로 입력단에는 IDT를 직렬형태로 연결시킨 block 형태로 하중을 가하는 전극 방법을 쓰고 출력단은 withdrawal 형태로 하중을 가하는 방법을 써서 제작하였다. 이를 바탕으로 경사진 빗살무늬 변환기 필터 전극 설계 방식에 대한 적절한 위상조건도 얻고자 시도하였다. Langasite 기판위에 형성시킨 입출력 빗살무늬 변환기 전극수는 50쌍, 두께는 $5000\;{\AA}$으로 하였으며, 반사기 폭은 $3.6{\mu}m$으로 하였다. 첫 번째 시료에서 hot전극과 반사기사이의 거리는 $2.4{\mu}m$이고, 접지 전극과 반사기사이의 거리는 $1.8{\mu}m$이며, hot전극에서부터 접지전극까지 간격은 $1.5{\mu}m$로 제작하였다. 두 번째 시료는 hot전극과 반사기사이의 거리 및 접지 전극과 반사가사이의 거리를 $2.4{\mu}m$로 동일하게 제작하였다. 제작한 필터의 주파수 특성은 중심주파수가 대략 190MHz정도, 대역폭은 7.3MHz이하로 측정되었으며, matching 후 return loss는 -20dB 이하이고, 리플 특성은 3dB정도이며, 반사에 의한 잔향은 -22dB 이하로 측정되었다.

• 자원리싸이클링
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• 제27권5호
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• pp.14-22
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• 2018

본 연구에서는 구리와 귀금속이 함유된 PCB 스크랩을 양극동으로 사용하여 $H_2SO_4$농도, 전류밀도 변화에 대하여 전해정련 실험을 수행하였다. 전해정련 실험을 통해 각 전극에서 회수된 Cu와 slime에 대하여 농도 분석을 하고 원소들의 거동을 확인하였으며, 전류효율도 계산하였다. $H_2SO_4$ 농도가 증가할수록 전류효율과 Cu의 순도는 감소하였지만 양극 슬라임 내에 귀금속은 2.0 M $H_2SO_4$ 조건에서 최대로 농축되었다. 또한 전류밀도가 증가할수록 전류효율은 감소하였고 Cu의 순도는 증가하는 경향을 나타내었으며 양극 슬라임 내에 귀금속은 $300A/m^2$ 조건에서 최대로 농축되었다. Pilot scale 실험 결과, 양극 슬라임에 Au 함량은 8,705 mg/kg, Ag 함량은 35,092 mg/kg으로 나타났고, 초기의 함량과 비교했을 때 Au는 약 16배, Ag는 약 14배 농축이 가능하였다.

• 한국결정성장학회지
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• 제25권3호
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• pp.116-120
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• 2015

혼합이온 전도체인 $K_2NiF_4$-type 산화물인 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말을 합성하여 결정구조 분석과 분말의 나노구조화에 따른 고체산화물 연료전지의 양극 성능을 비교 평가하였다. 이온 반경이 큰 Cu가 Ni 자리에 치환되어 Ni-O 팔면체 구조에서 c 축 방향으로 결정구조가 팽창하였으며, Ni-Cu의 Jahn-Teller 뒤틀림으로 산소이온 산화 환원 반응과 이온 전도도 특성에 영향을 주었다. 특히 나노구조의 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말의 경우 표면 촉매성능이 향상되어 단위 전지 성능 향상 결과를 얻을 수 있었다. Ni-YSZ 음극 지지체에 8YSZ 전해질을 dip-coating한 후 $La(Ca)_2Ni(Cu)O_{4+{\delta}}$ 분말을 양극으로 도포하여 얻은 SOFC 단위성능 측정 결과 $800^{\circ}C$에서 $1w/cm^2$의 최대 출력 값을 얻을 수 있었다.

• Journal of Electrochemical Science and Technology
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• 제11권2호
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• pp.172-179
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• 2020

The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L^-1 Au, 55gr·L^-1 Cu, 24 gr·L^-1 KCN and 1 ml·L^-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm^-2 average current density and 30% duty cycle, had 0.841 ㎛·min^-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.

• Current Applied Physics
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• 제18권11호
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• pp.1306-1312
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• 2018

The Mn-doped copper nitride ($Cu_3N$) films with Mn concentration of 2.0 at. % have high crystallinity and uniform surface morphology. We found that the as-synthesized Mn-doped $Cu_3N$ films show suitable optical absorption in the visible region and the band gap is ~1.48 eV. A simple photodetector based on Mn doped $Cu_3N$ films was firstly fabricated via magnetron sputtering method. The fabricated device with doping of Mn demonstrated high photocurrent response and fast response shorter than 0.1 s both for rise and decay time superior to the pure $Cu_3N$. Furthermore, the energy levels of Mn-doped Cu3N matched well with ITO and Ag electrode. The excellent photoelectric properties reflect a good balance between sensitivities and response rate. Our investigation reveals the excellent potential of Mn-doped $Cu_3N$ films for application of photodetectors.

• International Journal of Safety
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• 제1권1호
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• pp.52-57
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• 2002

The Decomposition of NO$_2$ (nitrogen dioxide), one of the Hazardous Air Pollutant (HAP), was studied by utilizing the SPCP (Surface induced discharge Plasma Chemical Processing) reactor so as to obtain optimum process variables and maximum decomposition efficiencies. Experimental results showed that for the frequency of 10kHz, the highest deco position efficiency of 84.7% for NO$_2$ was observed at the power consumptions of 20W. The decomposition efficiency of $NO_2$ was found to be: 1) proportional to the residence times, and inversely proportional to the initial concentrations of $NO_2$; 2) the maximum when the electrode diameter was 3mm; 3) influenced by the electrode material, decreasing in the order of W>Cu>Al; and 4) proportional to the $CH_4$ content, due to which the highest efficiency of 98% was obtained with almost all the $NO_2$ removed.