• 제목/요약/키워드: Cu electrode

검색결과 494건 처리시간 0.031초

폴리우레탄을 메트릭스로한 액막형 칼륨이온 선택성 전극의 제조 및 특성 (Characteristics and Preparation of Potassium Ion Selective Liquid Membrane Electrode Based on Polyurethane Matrix)

  • 유광식;이용탁;강철용
    • 대한화학회지
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    • 제35권2호
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    • pp.128-134
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    • 1991
  • 기존 칼륨이온 선택성 전극의 메트릭스로는 대체로 PVC가 사용되어졌으나, 본 연구에서는 폴리우레탄을 사용하였고, 용매 매개체로는 2-nitropheny-n-alkylate, 감응물질로는 potassium tetraphenyl borate 및 D-18-Crown-6 등을 써서 전극막을 제조하였다. 본 폴리우레탄 메트릭스의 칼륨이온 선택성전극의 수명은 75일로서 PVC 메트릭스의 칼륨이온 선택성 전극에 비하여 한층 더 길었다. 전극전위응답(slope factor)은 직선응답범위(K$^+$ 농도 : $1{\times}10^{-1}\;{\sim}\;1{\times}10^{-4}$ M)내에서 52 mV/decade이었고, 본 전극은 방해이온들 $(NH^{4+},\;Na^{+},\;Li^{+},\;Ca^{2+},\;Mg^{2+},\;Cu^{2+}$)이 존재하는 해수 중의 칼륨이온을 B(Ph)$_4^-$ 표준용액으로 전위차 적정시 종말점을 검출하는데 성공적으로 적용되었다.

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구리 ECMP에서 전류밀도가 재료제거에 미치는 영향 (Effect of Current Density on Material Removal in Cu ECMP)

  • 박은정;이현섭;정호빈;정해도
    • Tribology and Lubricants
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    • 제31권3호
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    • pp.79-85
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    • 2015
  • RC delay is a critical issue for achieving high performance of ULSI devices. In order to minimize the RC delay time, we uses the CMP process to introduce high-conductivity Cu and low-k materials on the damascene. The low-k materials are generally soft and fragile, resulting in structure collapse during the conventional high-pressure CMP process. One troubleshooting method is electrochemical mechanical polishing (ECMP) which has the advantages of high removal rate, and low polishing pressure, resulting in a well-polished surface because of high removal rate, low polishing pressure, and well-polished surface, due to the electrochemical acceleration of the copper dissolution. This study analyzes an electrochemical state (active, passive, transpassive state) on a potentiodynamic curve using a three-electrode cell consisting of a working electrode (WE), counter electrode (CE), and reference electrode (RE) in a potentiostat to verify an electrochemical removal mechanism. This study also tries to find optimum conditions for ECMP through experimentation. Furthermore, during the low-pressure ECMP process, we investigate the effect of current density on surface roughness and removal rate through anodic oxidation, dissolution, and reaction with a chelating agent. In addition, according to the Faraday’s law, as the current density increases, the amount of oxidized and dissolved copper increases. Finally, we confirm that the surface roughness improves with polishing time, and the current decreases in this process.

Electrochemical Studies of Immobilized Laccases on the Modified-Gold Electrodes

  • Yoon Chang-Jung;Kim Hyug-Han
    • 전기화학회지
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    • 제7권1호
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    • pp.26-31
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    • 2004
  • The direct electrochemical studies of four laccases (plant and fungal laccases) have been investigated on a gold electrode functionalized with a new tether of 2.2'-dithiosalicylic aldehyde. Results from these studies indicate that the redox potential of the active site of plant laccase from Rhus vernificera is shifted to a more negative value(255 mV versus SCE) than that of fungal laccase from Pyricularia oryzae (480 mV versus SCE). Mechanistic studies indicate that the reduction of type-1 Cu precedes the reduction of type-2 and type-3 Cu ions when the electrode is poised initially at different potentials. Also a new tether, 2.2'-dithiosalicylic aldehyde, has been used to study the redox properties of two laccases (LCCI and Lccla) covalently attached to a gold electrode. An irreversible peak at 0.47V vs. SCE is observed in the cyclic voltammorams of LCCI. In contrast, the cyclic voltammograms of LCCIa contain a quasi-reversible peak at 0.18V vs. SCE and an irreversible peak at 0.50V vs. SCE. We find that the replacement of the eleven amino acids a the C-terminus with a single cysteine residue $(i.e., \;LCCI{\rightarrow}LCCIa)$ influences the rate of heterogeneous electron transfer between an electrode and the copper containing active sites $(K_{het}\;for\;LCCI=1.0\times10^{-2}\;s^{-1}\;and\;K_{het}\;for\;LCCI_a= 1.0\;times10^{-1}\;s^{-1}\'at\;0.18V\;versus\;SCE\;and\;4.0\times10^{-2}\;s^{-1}\;at\;0.50V\; versus\;SCE)$. These results show for the first time that the change of the primary structure of a protein via site-directed mutagenesis influences both the redox potentials of the copper ions in the active site and the rate of heterogeneous electron transfer.

$450^{\circ}C$ 이하에서 FALC 공정에 의한 비정질 실리콘의 결정화 (Crystallization of amorphous silicon films below $450^{\circ}C$ by FALC)

  • 박경완;유정은;최덕균
    • 한국결정성장학회지
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    • 제12권4호
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    • pp.210-214
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    • 2002
  • $450^{\circ}C$ 이하에서 Cu를 이용한 전계 유도 방향성 결정화 공정을 통해 비정질 실리콘의 결정화 거동을 고찰하였다. 열처리와 동시에 전계를 인가하여 Cu가 증착된 패턴의 외부에서 Cu가 존재하지 않는 비정질 실리콘의 영역으로 측면 결정화를 유도하였다. 특히, Cu가 존재하지 않는 영역의 측면결정화는 (-) 전극 쪽에서 (+) 전극 쪽으로 방향성을 가지고 결정화가 진행되었다. 이러한 현상은 Cu와 Si가 반응 할 때, 주확산 종이 금속(Cu)이기 때문에 가능하다고 판단되었다. 또한, FALC 공정을 이용한 $350^{\circ}C$의 온도에서 결정화된 영역 내에 커다란 dendrites 형태의 가지가 형성되었고 전계 방향에 따른 측면 결정화가 진행되었음을 확인하였다. 결론적으로 $350^{\circ}C$의 매우 낮은 온도에서 30 V/cm의 전계 인가를 통해 12$\mu$m/h의 결정화 속도로 결정화가 가능함을 확인하였다.

음극전착법을 이용한 Cu2O 막의 광전기 화학적 특성 (Photoelectrochemical Characteristics for Cathodic Electrodeposited Cu2O Film on Indium Tin Oxide)

  • 이은호;정광덕;주오심;최승철
    • 한국세라믹학회지
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    • 제41권3호
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    • pp.183-189
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    • 2004
  • 음극전착법을 이용하여 전도성유리(ITO-glass)위에 Cu$_2$O 막을 제조하였다. Cu$_2$O 막의 특성을 향상시키기 위하여 전착방법, 시간, 전압, 전착 후 열처리 조건을 변화시켰다. 전착 후 열처리를 통해 얻어진 전극에 100mW/$ extrm{cm}^2$의 백색광을 조사하여 광전류밀도를 측정하고 XRD, SEM, UV-visible spectrophotometer를 통해 제조 조건변화에 따른 특성변화를 관찰하였다. 그리고 100mW/$\textrm{cm}^2$의 백색광하에서 bias 전압이 0V인 조건에서 전극의 안정성을 측정하였다 인가전압 -0.7V, 인가시간 300초 전착 조건에서 얻어진 막을 30$0^{\circ}C$에서 1시간 열처리하여 순수한 Cu$_2$O 막을 제조하였으며, 이 전극을 이용 광전류밀도를 측정한 결과 1048 $\mu$A/$\textrm{cm}^2$가 측정되었다. 또한 chemical deposition을 이용 TiO$_2$ 박막을 Cu$_2$O 막 위에 코팅하여 전극의 안정성을 향상시켰다.

Reactive Magnetron Sputtering 적용 CuNx-Cu-CuNx 적층형 Metal Mesh 터치센서 전극 특성 연구 (A Study on the Metal Mesh for CuNx-Cu-CuNx Multi-layer Touch Electrode by Reactive Magnetron Sputtering)

  • 김현석;양성주;노경재;이성의
    • 한국전기전자재료학회논문지
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    • 제29권7호
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    • pp.414-423
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    • 2016
  • In the present study, the $CuN_x-Cu-CuN_x$ layer the partial pressure ratio Cu metal of Ar and $N_2$ gas using a DC magnetron sputtering device, was generated by the In-situ method. $CuN_x$ layer was able to obtain a surface reflectance reduction effect from the advantages of the process and the external light. $CuN_x$ layer is gas partial pressure, DC the Power, the deposition time variable transmittance in response to the thickness and partial pressure ratio, the reflectance was measured. $Ar:N_2$ gas ratio 10:10(sccm), DC power 0.35 A, was derived Deposition time 90 sec optimum conditions. Thus, according to the optimal thickness and the composition ratio was derived surface reflectance of 20.75%. In addition, to derive the value of ${\Delta}$ Ra surface roughness of 0.467. It was derived $CuN_x$ band-gap energy of about 2.2 eV. Thus, to ensure a thickness and process conditions can be absorbed to maximize the light in a wavelength band in the visible light region. As a result, the implementation of the $12k{\Omega}$ base line resistance of using the Cu metal. This is, 5 inch Metal mesh TSP(L/S: $4/270{\mu}m$) is in the range of the reference operation.

전착법을 이용한 CuInSe2 박막태양전지 광활성층의 조성 조절 (Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition)

  • 박영일;김동환;서경원;정증현;김홍곤
    • 한국전기전자재료학회논문지
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    • 제26권3호
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    • pp.232-239
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    • 2013
  • Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

벗김전압전류법을 이용한 카본나노튜브 전극에서의 구리 분석 (Analysis of Trace Copper Metal at The Electrode Consisting of Carbon Nanotube using Stripping Voltammetry)

  • 최장군;정영삼;김낙주;박대원;정건용;김래현;권용재
    • Korean Chemical Engineering Research
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    • 제50권5호
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    • pp.933-937
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    • 2012
  • 본 연구에서는 환경오염을 발생시키는 주요한 중금속 물질의 하나인 구리를 상대적으로 쉽게 검출하기 위해, CNT 전극 및 벗김전압전류법을 이용하여 구리 금속의 감도 향상을 위한 최적조건 및 민감도를 평가하였다. 또한 구리의 벗김반응이 발생될 때의 반응 메카니즘에 대한 연구도 수행하였다. 이를 위해, 네모파 벗김전압전류법 및 선형주사 전압 전류법등의 전기화학적 분석법이 이용되었다. 평가 결과, 네모파 벗김전압전류법의 최적조건으로, 15 mV의 네모파증폭율, 60 Hz의 주파수, -1.0V vs. Ag/AgCl의 석출전위 및 200초의 석출시간이 결정되었다. 구리 금속의 민감도를 측정한 결과 $1.824{\mu}A/{\mu}M$의 민감도를 얻을 수 있었다. 선형주사 전압전류법을 이용하여 구리의 벗김반응에 영향을 끼치는 인자를 평가하였을 때, 확산반응 보다는 표면반응이 구리의 벗김반응 성능에 영향을 끼치는 것으로 측정되었다. 이러한 전기화학적 분석 결과가 다른 참고문헌들과 비교되어졌고, 구리금속의 민감도 측면에서 본 연구에서 제안한 CNT 전극의 우수함이 입증되었다.

Polymer 다섯자리 Schiff Base Co(Ⅱ), Ni(Ⅱ) 및 Cu(Ⅱ) 착물들의 합성과 전기화학적 성질 (Synthesis and Electrochemical Properties of Polymeric Pentadentate Schiff Base Co (Ⅱ), Ni (Ⅱ), and Cu (Ⅱ) Complexes)

  • 최용국;최주형;박종대;심우종
    • 대한화학회지
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    • 제38권2호
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    • pp.136-145
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    • 1994
  • Poly(4-vinylpyridine-co-styrene)[PVPS]리간드에 monomer착물인 M(Ⅱ)(SND) 및 M(Ⅱ)(SOPD)[M: Co(Ⅱ), Ni(Ⅱ) 및 Cu(Ⅱ)]들을 반응시켜 새로운 polymer다섯자리 Schiff base착물인 M(Ⅱ)(PVPS)(SND), M(Ⅱ)(PVPS)(SOPD)들을 합성하였다. 이들 착물들의 원소분석, IR-spectra, UV-visible spectra 및 T.G.A.측정결과에 의하여 Co(Ⅱ), Ni(Ⅱ) 및 Cu(Ⅱ) 착물들은 polymer 5배위 착물로 주어짐을 알았다. 또한 0.1M TEAP-DMF용액에서 순환 전압-전류법과 시차펄스 포라로그래피에 의한 이들의 전기화학적 성질은 Co(Ⅱ)(PVPS)(SND) 및 Co(Ⅱ)(PVPS)(SOPD)는 Co(Ⅲ)/Co(Ⅱ) 와 Co(Ⅱ)/Co(Ⅰ)의 두단계의 환원과정이 비가역적으로 일어나고, Ni(Ⅱ)(PVPS)(SND) 와 Ni(Ⅱ)(PVPS)(SOPD)는 Ni(Ⅱ)/Ni(Ⅰ)의 비가역적인 일단계 환원과정으로, 그리고 Cu(Ⅱ)(PVPS)(SND)와 Cu(Ⅱ)(PVPS)(SOPD)는 Cu(Ⅱ)/Cu(Ⅰ)의 비가역적인 일단계 환원과정으로 일어남을 알았다.

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치과용 아말감의 산화환원에 관한 전기화학적 연구 (AN ELECTROCHEMICAL STUDY ON THE OXIDATION' AND REDUCTION OF DENTAL AMALGAM)

  • 이인복;이명종
    • Restorative Dentistry and Endodontics
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    • 제18권2호
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    • pp.431-445
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    • 1993
  • The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

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