• 한국기계가공학회지
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• 제20권6호
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• pp.100-107
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• 2021

As a significant technology in the smartization era promoted by the Fourth Industrial Revolution, the secondary battery industry has recently attracted significant attention. The demand for lithium-ion batteries (LIBs), which exhibit excellent performance, is considerably increasing in different industrial fields. During the manufacturing process of LIBs, it is necessary to join the cathode and anode sheets with thicknesses of several tens of micrometers to lead taps of the cathode and anode with thicknesses of several hundreds of micrometers. Ultrasonic welding exhibits excellent bonding when bonded with very thin plates, such as negative and positive electrodes of LIBs, and dissimilar and highly conductive materials. In addition, ultrasonic welding has a small heat-affected zone. In LIBs, Cu is mainly used as the negative electrode sheet, whereas Cu or Ni is used as the negative electrode tab. In this study, one or two electrode sheets (t0.025 mm Cu) were welded to one lead tab (t0.1 mm Cu). The welding energy and pressure were used as welding parameters to determine the welding strength of the interface between two or three welded materials. Finally, the effects of these welding parameters on the welding strength were investigated.

• 한국재료학회지
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• 제29권1호
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• pp.37-42
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• 2019

This study investigates Ag coated $Cu_2O$ nanoparticles that are produced with a changing molar ratio of Ag and $Cu_2O$. The results of XRD analysis reveal that each nanoparticle has a diffraction pattern peculiar to Ag and $Cu_2O$ determination, and SEM image analysis confirms that Ag is partially coated on the surface of $Cu_2O$ nanoparticles. The conductive paste with Ag coated $Cu_2O$ nanoparticles approaches the specific resistance of $6.4{\Omega}{\cdot}cm$ for silver paste(SP) as $(Ag)/(Cu_2O)$ the molar ratio increases. The paste(containing 70 % content and average a 100 nm particle size for the silver nanoparticles) for commercial use for mounting with a fine line width of $100{\mu}m$ or less has a surface resistance of 5 to $20{\mu}{\Omega}{\cdot}cm$, while in this research an Ag coated $Cu_2O$ paste has a larger surface resistance, which is disadvantageous. Its performance deteriorates as a material required for application of a fine line width electrode for a touch panel. A touch panel module that utilizes a nano imprinting technique of $10{\mu}m$ or less is expected to be used as an electrode material for electric and electronic parts where large precision(mounting with fine line width) is not required.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.105-109
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• 2018

본 연구는 구리의 이산화탄소 환원 촉매 특성을 향상시키기 위해 전극 촉매 물질인 다공성 구리에 그래핀을 적용하였다. Thermal Chemical Vapor Deposition(TCVD)법을 이용하여 직접적으로 그래핀이 혼합된 다공성 구리를 제조하였다. 0.1 M $KHCO_3$ 전해액을 사용하여, -1.0 V ~ -1.4 V의 인가전위로 전기화학 실험을 수행한 결과, 그래핀이 혼합된 다공성 구리 전극의 전류 밀도는 다공성 구리에 비해 1.8 배 이상 증가하였다. 생성물을 평가한 결과, 다공성 구리 전극에서 CO와 $H_2$만 생성된 반면 그래핀이 포함된 다공성 구리의 생성물은 CO 뿐만이 아닌 $CH_4$와 $C_2H_4$가 생성되었다. 이는 그래핀으로 인해 이산화탄소 흡착 시간이 길어짐으로써 반응 중 생성된 중간체들이 전극 표면에 머무르는 시간이 길어졌으며, 결과적으로 C2 화합물 생성 반응까지 연속적으로 진행될 수 있었다고 판단된다.

• 한국환경과학회지
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• 제21권5호
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• pp.555-562
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• 2012

The experimental determination of equilibrium constants is required to estimate concentrations of reagents and/or products in environmental chemical reactions. For an example, the choice of copper (Cu) complexation reactions was motivated by their fast kinetics and the ease of measurement of Cu by an ion-sensitive electrode. Each individual titrant of sulfate ($SO{_4}^{2-}$) and oxalate ($C_2O{_4}^{2-}$) was expected to have its own unique characteristics, depending on the bonding in Culigands connected to the aqueous species. The complexation reaction of Cu with $SO{_4}^{2-}$ somewhat fast reached equilibrium status compared with $C_2O{_4}^{2-}$. The experimental equilibrium constants ($K_{eq}$) of copper sulfate ($CuSO_4$) and copper oxalate ($CuC_2O_4$) were determined $10^{2.2}$ and $10^{3{\sim}4.3}$, respectively.

• 한국표면공학회지
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• 제27권4호
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• pp.223-233
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• 1994

It is well known that compositionally modulated Cu-Ni alloy can be produced by an electrochemical method in Ni sulfate solution containing trace amount of Cu. a mathematical model is presented to describe the current distribution and weight percent of Cu in Ni layer on the rotating disk electrode. The model includes convective-diffusion equation, the Laplace's equation and various overpotentials, and is solved numerically. The thickness of Cu layer is almost uniform whereas the thickness of Ni layer as well as the Ni/Cu weight ratio are increased approaching to the edge of the disk. These results agree well with the experimental values. The ohmic potential drop is suggested as a major cause of a nonuniformity in Ni layer. The optimum plating condition for the fabrication of susperlattice is proposed based on the results of this study.

• 한국환경과학회지
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• 제20권5호
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• pp.623-630
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• 2011

This study investigated the degradation of N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the generation of OH radical) by using dielectric barrier discharge (DBD) plasma. The DBD plasma reactor of this study consisted of a quartz dielectric tube, titanium discharge (inner) and ground (outer) electrode. The effect of shape (rod, spring and pipe) of ground electrode, diameter (9~30 mm) of ground electrode of spring shape and inside diameter (4~13 mm) of quartz tube, electrode diameter (1~4 mm), electrode materials (SUS, Ti, iron, Cu and W), height difference of discharge and ground electrode (1~15.5 cm) and gas flow rate (1~7 L/min) were evaluated. The experimental results showed that shape of ground electrode and materials of ground and discharge electrode were not influenced the RNO degradation. The thinner the diameter of discharge and ground electrode, the higher RNO degradation rate observed. The effect of height gap of discharge between ground electrode on RNO degradation was not high within the experimented value. Among the experimented parameters, inside diameter of quartz tube and gas flow rate were most important parameters which are influenced the decomposition of RNO. Optimum inside diameter of quartz tube and gas flow rate were 7 mm and 4 L/min, respectively.

• 한국군사과학기술학회지
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• 제7권1호
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• pp.34-46
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• 2004

Copper films were prepared by using ECR-MOCVD(Electron Cyclotron Resonance Metal Organic Chemical Vapor Deposition) coupled with a DC bias system. The DC bias is connected to the electrode which placed 1∼3cm above the polymer substrate. The pulse electrical field around the electrode attracts the positive charged copper ions generated from the dissociation of copper precursor, $Cu(hfac)_2$, under ECR plasma. Condensation of supersaturated copper ions in the space between the electrode and substrate, makes it possible to deposit copper film on the polymer substrate even at room temperature. In this study, optimization of the electrode configuration was carried out in order to obtain the uniform films. The uniformity of the deposited films were closely related to the parameters of electrode geometry such as electrode shape, thickness, grid size and the spacing between electrodes. The most uniform copper film was observed with the electrode that enabled uniform electrical field distribution across the whole dimension of electrode.

• 한국재료학회지
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• 제13권8호
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• pp.503-508
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• 2003

The purpose of this study is to investigate the effect of $V_2$$O_{5}$ addition on the Ag and Cu precipitation in the NiCuZn ferrite layers of 7.7${\times}$4.5${\times}$1.0 mm sized multi-layer chip inductors prepared by the screen printing method using 0∼0.5 wt% $V_2$$O_{5}$ -doped ferrite pastes. With increasing the $V_2$$O_{5}$ content and sintering temperature, Ag and Cu oxide coprecipitated more and more at the polished surface of ferrite layers during re-annealing at $840^{\circ}C$. It was thought that during the sintering process, V dissolved in the NiCuZn ferrite lattice and the Ag-Cu liquid phase of low melting point was formed in the ferrite layers due to the Cu segregation from the ferrite lattice and Ag diffusion from the internal electrode. During re-annealing at $840^{\circ}C$, the Ag-Cu liquid phase came out the polished surface of ferrite layers, and was decomposed into the isolated Ag particles and the Cu oxide phase during the cooling process.

• 대한안전경영과학회:학술대회논문집
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• 대한안전경영과학회 1999년도 추계학술대회
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• pp.543-563
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• 1999

본 연구에서는 특수 설계된 연면방전(Surface discharge induced Plasma Chemical Process, SPCP) 반응기로부터 발생하는 플라스마에 의하여 일산화질소(NO)와 이산화질소($NO_2$)등 유해 환경오염 가스를 주파수, 유량, 농도, 전극재질 및 감은 횟수 등의 공정변수 변화에 따른 분해율, 소비전력 및 소비전압 등을 측정하여 최적의 공정조건과 최대의 분해효율을 얻고자 하였다. 표준시료로서 일산화질소와 이산화질소를 고전압발생기의 주파수(5~50kHz), 유해가스의 체류시간(1~10.5 초)과 초기농도(100~1000 ppm), 전극의 재질(W, Cu, Al), 전극의 굵기(1, 2, 3 mm)및 감은횟수(7회, 9회, 11회)에 대하여 플라스마 연면방전 반응기를 이용하여 분해효율을 구하였다. 유해가스(NO, $NO_2$)의 분해제거 실험결과, 10 kHz의 주파수와 각각 19.8와 20 W의 소비전력에서 각각 94.3, 84.7 %로 가장 높은 분해제거율을 나타내었고, 20 kHz이상에서는 주파수가 커질수록 분해율이 감소하였다. 또한 연면방전 반응기에서 유해가스의 체류시간이 길수록, 그리고 초기농도가 작을수록 분해율은 증가하였다. 방전전극에 대한 영향은 전극의 굵기가 굵을수록 분해율이 증가하여 본 실험의 경우 3 mm의 전극을 사용하였을 때 가장 높은 분해율을 나타내었고, 전극의 재질은 텅스텐을 사용하여 방전한 경우에 가장 높은 분해율을 보였으며 구리, 알루미늄의 순으로 낮아졌다. 방전전극의 감은 횟수에 대한 영향은 7회, 9회, 11회의 순으로 감은 횟수가 많을수록 분해율이 높아짐을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.