• Journal of Welding and Joining
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• v.10 no.3
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• pp.26-39
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• 1992

Diffusion bonding of Mo was performed by using the metallic coating of Cu and Cr on the surface to be bonded. Joint characteristics of Mo with or without coating layer were compared in metallurgical and fractograpical aspects. The results showed that the diffusion bonding with coating layer, especially with Cu coating, increased the bending strength of joint. Variation of heating cycle(elevation of temperature for a moment) did not affect significantly the mechanical properties of joint. Fractographical analysis showed that the fracture of joint bonded with Cr coating occurred at the coating layer, while that with Cu coating occurred at the base metal.

• Journal of Powder Materials
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• v.1 no.1
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• pp.79-84
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• 1994

The mechanism of activated sintering of tungsten powder was discussed in terms of diffusion and segregation of activator atoms at W grain boundaries. Shrinkage behaviours of W-0.2wt.% Ni, W-0.2wt.% Cu or pure W powder compacts during sintering at low temperatures of 900~ $1200^{\circ}C$ were investigated. It was found that the Cu additive inhibits sintering process causing lower densification than pure W compact while remarkable shrinkage occurred in the Ni added W powder. Such contrary effect was explained by comparing self diffusion processes along Ni or Cu segregated W boundaries in which Ni segregants enhance but Cu atoms retard the migration of W atoms at W boundaries.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.39-40
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• 1998

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.

• Korean Journal of Materials Research
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• v.6 no.10
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• pp.1017-1024
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• 1996

본 연구에서는 여러 기판에 대한 Cu의 확산정도를 알기 위하여 Ta, Nb, Co/Ta이중층 및 Co/Nb 이중층 위에 기화법으로 증착하고 열처리를 실시하였다. 열처리한 Ta막은 열처리하지 않은 Ta막보다 Cu 확산방지막으로서의 성능이 더 떨어지는데, 이것은 열처리에 의하여 Ta막이 결정화되기 때문이다. Cu/Co/Ta/(001)Si 구조에서의 구리 실리사이드 생성온도는 Cu/Co/Ta(001)Si 구조에서의 그것보다 더 높다. 한편, nb의 Cu에 대한 barrier 특성은 Ta와 비슷한 수준이다. 또한 Cu막 도포 이전에 Pd+HF활성화 전처리나 N2플라즈마 전처리를 실시하면, Cu의 핵생성뿐만 아니라 기판에 대한 Cu막의 접착성도 향상된다.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.19-24
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• 2009

Formation of an adhesion/barrier layer and a seed layer by sputtering techniques followed by electroplating has been one of the most widely used methods for the filling of through-Si via (TSV) with high aspect ratio for 3-D packaging. In this research, the adhesion and diffusion-barrier properties of the $TaN_x$ film deposited by reactive sputtering were investigated. The adhesion strength between Cu film and $SiO_2$/Si substrate was quantitatively measured by $180^{\circ}$ peel test and topple test as a function of the composition of the adhesive $TaN_x$ film. As the nitrogen content increased in the adhesive $TaN_x$ film, the adhesion strength between Cu and $SiO_2$/Si substrate increased, which was attributed to the increased formation of interfacial compound layer with the nitrogen flow rate. We also examined the diffusion-barrier properties of the $TaN_x$ films against Cu diffusion and found that it was improved with increasing nitrogen content in the $TaN_x$ film up to N/Ta ratio of 1.4.

• Journal of the Korean Electrochemical Society
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• v.10 no.1
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• pp.14-19
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• 2007

The corrosion and passivation of copper was investigated with the copper rotating disk electrode(Cu-RDE) in borate buffer solution. It has been observed with the mixed potential theory that the corrosion potential for the rotation rate increase under the convective diffusion condition was increased. It was suggested that the chemical intermediates and product 13. the copper oxidation were $Cu(OH)_{ads},\;{Cu(OH)_2}^-,\;Cu_2O,\;Cu(OH)_2,\;and\;CuO$.

• Korean Journal of Materials Research
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• v.12 no.11
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• pp.889-893
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• 2002

The reactions of $Cu/Ti/SiO_2$ structures at temperatures ranging from 200 to $700^{\circ}C$ have been studied for various Ti thicknesses. The reaction products initially formed, at around $300^{\circ}C$, were a series of Cu-Ti intermetallics ($Cu_3$Ti/CuTi) with the oxygen dissolved in the Ti moving from the compounds into the remaining unreacted Ti. At $500^{\circ}C$, the $Cu_3$Ti was converted into Cu-rich intermetallics, $Cu_4$Ti, which grew at the expense of the CuTi due to the increased oxygen content in the Ti. In addition, the outdiffusion of Ti, to the Cu surface, and the $Ti-SiO_2$ reactions, caused an abrupt increase in the oxygen content in the Ti layer, which placed thermodynamic restraints on further Ti reactions. Furthermore, thinner Ti layers showed a higher increasing rate of oxygen accumulation for the same consumption of Ti, which led to significantly reduced Ti consumption. The $SiO_2$ film under the Ti diffusion barrier was more easily destroyed with increasing Ti thickness.

• Korean Journal of Materials Research
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• v.6 no.6
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• pp.626-631
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• 1996

Reactive dc magnetron sputtering 법을 이용하여 증착한 molybdenum mitride 박막의 Cu 확산 방지막 특성을 조사하였다. Cu 확산 방지막으로서 molybdenum nitride 박막의 열적안정성을 관찰하기 위하여 molybdenum nitride 박막 위에 Cu를 evaporation 법으로 증착하고 진공 열처리하였다. Cu/r-Mo2N/si 구조는 $600^{\circ}C$, 30분간 열처리 시까지 안정하였다. 확산 방지막의 파괴는 $650^{\circ}C$, 30분간 열처리 시부터 격자 확산(lattice diffusion)이나 입계(grain boundary)과 결함(defect)을 통한 확산에 의해 나타나기 시작하였고, 이 때 molybdenum silicide과 copper silicide의 형성에 기인된 것으로 생각되었다. 열처리 이후 Cu/r-Mo2N/Si 사이의 상호반응이 증가하였다. 이는 Rutherford backscattering spectrometry, Auger electron spectroscopy 그리고 Nomarski microscopy 등의 분석을 통해 조사되었다.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.642-648
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• 2011

This paper describes an experimental study on ultrasonic welding of similar and dissimilar metals. There are optimum welding conditions which are found for welding of Al/Al and Al/Cu. It evaluated weldability using tensile test, SEM observation and EDX-ray analysis. Both ultrasonic welding of Al/Al and Al/Cu have amplitude as the variable factor. Al/Cu welding was examined again with welding time as variable factor to find the best conditions. The more welding time or amplitude increase, the better weldability. The optimum conditions for ultrasonic welding of Al/Al were formed at pressure 0.25 MPa, welding time 0.25 sec, amplitude 90%. Pressure 0.25 MPa, welding time 0.4 sec, amplitude 80% are optimized for Al/Cu ultrasonic metal welding and solid-state diffusion generated by ultrasonic vibration and frictional heat is confirmed at the welded interface.

• Journal of the Korean Magnetics Society
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• v.13 no.1
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• pp.15-20
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• 2003

Diffusion speed of Cu metal fine particle is fast better than CuO, so it will promote grain growth in sintering. In this paper, the influence on substituting Cu fine particle for CuO of NiCuZn ferrite with basic composition (N $i_{0.204}$C $u_{0.204}$Z $n_{0.612}$ $O_{1.02}$)F $e_{1.98}$ $O_{2.98}$ has been investigated with varying Cu/CuO ratio. The perfect spinel structure of sintered specimen at 90$0^{\circ}C$ was confirmed by the analysis of XRD patterns. The best condition was obtained when the ratio of Cu/CuO was 60%, and the permeability was 1100 and Ms was 87 emu/g in this condition. Cu has influenced on grain growth in sintering, substituting Cu fine particle for CuO could lower sintering temperature over the 3$0^{\circ}C$. After sintering, substituting Cu performed as good as CuO.s CuO.s CuO.