• 제목/요약/키워드: Cu diffusion

검색결과 443건 처리시간 0.025초

STEM에 의한 구리와 코디에라이트 접촉면의 특성 연구 (Characterization of Cu/cordierite Interfaces by STEM)

  • 한병성
    • 대한전자공학회논문지
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    • 제27권10호
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    • pp.101-105
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    • 1990
  • $900^{\circ}C$에서 합성된 코디에라이트의 합성 방법인 졸겔방법은 구리와 세라믹간의 상호 열처리를 가능하게 해준다. 구리와 코디에라이트 기판과의 강한 결합은 eutectic bonding 기술로 얻어질 수 있다. 구리와 코디에라이트의 접촉면에서 미시적 특성을 STEM을 이용하여 연구하였는데 구리의 확산은 강한 화학적, 구조적 변화와 함께 접촉면 영역에서 이루어지고 있다. 비록 이들 접촉면이 강한 접촉력을 가지고 있지만 접촉면에서 구리화합물의 형성에 대한 명백한 입증을 얻어내지는 못하였다.

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Copper-clad Aluminium 복합재료의 정수압 압출시 다이 각이 미치는 효과 (Effect of Die Angle in the Hydrostatic Extrusion of Copper-clad Aluminium Composites)

  • 한운용;박훈재;윤덕재;정하국;김승수;김응주;이경엽
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2003년도 춘계학술대회 논문집
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    • pp.414-417
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    • 2003
  • A copper-clad aluminium composite bar is lighter and less expressive than a commercial copper alloy bar. Copper-clad aluminium composite bar can be fabricated by hot hydrostatic extrusion process. In this work, the effect of die angle on the compressive properties of copper-clad aluminium composites fabricated using hydrostatic extrusion process was investigated experimentally. The results showed that optimum half die angle was in the range of 40$^{\circ}$ to 50$^{\circ}$ for an extrusion ratio of 19. The results also showed that the half die angle had little influence on the compressive strength of copper-clad aluminium composites. A diffusion layer increased with increasing die angle.

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나노금속재료의 인장불안정에 대한 모델링 (Modelling the Tensile Instability of Nanocrystalline Metallic Materials)

  • 김형섭
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2001년도 추계학술대회 논문집
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    • pp.251-254
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    • 2001
  • In this paper, the effect of grain refinement on room temperature ductility of copper was addressed. Recent experimental results have shown that this material, as well as a number of other single-phase metals that are ductile when coarse-grained, loose their ductility with decreasing grain size in the sub micrometer range. A recently developed model in which such materials are considered as effectively two-phase ones (with the grain boundaries treated as a linearly viscous second phase) was applied to analyze stability of Cu against ductile necking. As a basis, Hart's stability analysis that accounts for strain rate sensitivity effects was used. The results confirm the observed trend for reduction of ductility with decreasing grain size. The model can be applied to predicting the grain size dependence of ductility of other metallic materials as well.

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Chemical Properties of Cu( II ) Compound Containing Endocrine Disrupter, Bis-Phenol A

  • Park, Chil-Nam
    • Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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    • 제10권S_3호
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    • pp.121-126
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    • 2001
  • The techniques of pulse and cyclic voltammetry were applied to the determination of (E$_{1}$2)$_2$-(E$_{1}$2)$_1$ for two-step electrochemical charge transfers. In addition, a simple amplitude was derived far the dependence of the differential pulse response on (E$_{l}$ 2/)$_1$ and (E$_{1}$2/)$_2$. and the use of peak to peak separation in cyclic voltammetry and differential pulse methods was evaluated. A comparison of the comproportionation constants(Ke) from differential pulse and cyclic voltammetry methods exhibited a good agreement within 5%.

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Polarization Behavior of Li4Ti5O12 Negative Electrode for Lithiumion Batteries

  • Ryu, Ji-Heon
    • Journal of Electrochemical Science and Technology
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    • 제2권3호
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    • pp.136-142
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    • 2011
  • $Li_4Ti_5O_{12}$ is prepared through a solid-state reaction between $Li_2CO_3$ and anatase $TiO_2$ for applications in lithium-ion batteries. The rate capability is measured and the electrode polarization is analyzed through the galvanostatic intermittent titration technique (GITT). The rate characteristics and electrode polarization are highly sensitive to the amount of carbon loading. Polarization of the $Li_4Ti_5O_{12}$ electrode continuously increases as the reaction proceeds in both the charge and discharge processes. This relation indicates that both electron conduction and lithium diffusion are significant factors in the polarization of the electrode. The transition metal (Cu, Ni, Fe) ion added during the synthesis of $Li_4Ti_5O_{12}$ for improving the electrical conductivity also greatly enhances the rate capability.

Preparation and Its Properties of YBCO Superconductor Induced by Seeds

  • Shan, Y.Q.;Soh, D.W.;Fan, Z.G.;Men, M.F.;Wang, W.H.;Zhao, Z.X.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.371-373
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    • 1998
  • The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

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Preparation and Its Properties of YBCO Superconductor Induced by Seeds

  • Shan, Y.Q.;Soh, D.W.;Fan, Z.G.;Men, M.F.;Wang, W.H.;Zhao, Z.X.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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    • pp.491-493
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    • 1998
  • The SmBa$_2$Cu$_3$O$\sub$x/ single crystals were used as seeds to induced YBCO growth in MTG process. As the result, the large bulk oriented YBCO superconductors were prepared with dimension of plane 21mm and 32mm in diameter and 10mm in height. The typical Jc value of the sample is 6.5${\times}$10$^4$A/$\textrm{cm}^2$ and its flux float force is 4.6N/$\textrm{cm}^2$. The oxygen absorption in large bulk textured YBCO samples in pure oxygen was studied at several constant temperatures. It can be divided into two steps: a chemical reaction step and a diffusion step.

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플립칩 패키지에서 UBM 및 IMC 층의 형상 모델링 (Solid Modeling of UBM and IMC Layers in Flip Chip Packages)

  • 신기훈;김주한
    • 한국공작기계학회논문집
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    • 제16권6호
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    • pp.181-186
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    • 2007
  • UBM (Under Bump Metallurgy) of flip chip assemblies consists of several layers such as the solder wetting, the diffusion barrier, and the adhesion layers. In addition, IMC layers are formed between the solder wetting layers (e.g. Cu, Ni) and the solder. The primary failure mechanism of the solder joints in flip chips is widely known as the fatigue failure caused by thermal fatigues or electromigration damages. Sometimes, the premature brittle failure occurs in the IMC layers. However, these phenomena have thus far been viewed from only experimental investigations. In this sense, this paper presents a method for solid modeling of IMC layers in flip chip assemblies, thus providing a pre-processing tool for finite element analysis to simulate the IMC failure mechanism. The proposed modeling method is CSG-based and can also be applied to the modeling of UBM structure in flip chip assemblies. This is done by performing Boolean operations according to the actual sequences of fabrication processes

(Sr.Ca)$TiO_3$ 세라믹스의 용량-전압 특성 (Capacitive-Voltage properties of (Sr.Ca)$TiO_3$ Ceramics)

  • 강재훈;최운식;김충혁;김진사;박용필;송민종
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.34-37
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    • 2001
  • In this study, the capacitance-voltage properties of (Sr$_{1-x}$ .Ca$_{x}$)TiO$_3$(0.05$\leq$x$\leq$0.20)-based grain boundary layer ceramics were investigated. The ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 1480~150$0^{\circ}C$ and 4 hours, respectively. The 2nd phase formed by the thermal diffusion of CuO from the surface leads to very excellent dielectric properties, that is, $\varepsilon$$_{r}$>50000, tan$\delta$<0.05, $\Delta$C<$\pm$10%. The capacitance is almost unchanged below about 20[V] but it decreases slowly about 20[V]. The results of the capacitance-voltage properties indicated that the grain boundary was composed of the continuous insulating layers.ulating layers.s.

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구리 나노배선에서의 전해 구리도금막과 피복층 계면 결함에 관한 연구 (A study on the defect of electroplated Copper/diffusion barrier interface for Cu nano-interconnect)

  • 이민형;이홍기;이호년;허진영
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.51-52
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    • 2011
  • 본 연구에서는 전해 구리도금막과 SiN 피복층 사이의 힐락 (Hillock) 및 보이드 (Void) 결함에 미치는 전해 구리도금 공정 및 CVD SiN 피복층 증착 전 NH3 플라즈마 처리 효과에 대해 연구하였다. SiN 피복층 증착전 NH3 플라즈마 효과를 정량화하기 위해 실험계획법을 이용해 NH3 플라즈마 공정 인자가 힐락 결함의 밀도에 미치는 영향에 대해 고찰하였다. 실험결과, 힐락 결함의 밀도는 NH3 플라즈마 인가 시간에 비례한다는 것을 알았다. 보이드 결함의 경우, 구리 씨앗층 및 NH3 플라즈마 조건의 최적화를 통해 구리 씨앗층의 표면 조도를 최소화할 경우 보이드 결함이 최소화된다는 것을 알 수 있었다. 이는 구리 씨앗층의 표면 조도를 최소화함에 따라 전해 구리도금막의 결정립 크기가 커져 결정립 계면에 존재하는 불순물 양이 줄어들었기 때문인 것으로 사료된다.

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