• 제목/요약/키워드: Cu diffusion

검색결과 443건 처리시간 0.023초

열분석법에 의한 Al-2.1Li-2.9Cu합금의 석출현상(I) - 석출순서 - (The Precipitation Phenomena of Al-2.1Li-2.9Cu alloy by Differential Scanning Calorimetry(I) - Precipitation sequence -)

  • 박태원
    • 열처리공학회지
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    • 제9권4호
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    • pp.252-260
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    • 1996
  • A study was conducted to examine the precipitation phenomena of Al-2.1Li-2.9Cu alloy by differential scanning calorimetry and transmission electron microscopy. DSC curves were measured over the temperature range of $25{\sim}550^{\circ}C$ at a heating rate of $2{\sim}20^{\circ}C$/min.. Three heat evolution peaks and three heat absorption peaks were observed in the DSC curve for the as-quenched specimen. From DSC results and TEM analysis, it was proved that the precipitation sequence in the as-quenched specimen is supersaturated solid solution ${\rightarrow}$ GP zone ${\rightarrow}{\delta}^{\prime}{\rightarrow}T_1{\rightarrow}T_2$ and ${\theta}^{\prime}$ was detected in the peak aged specimen at $160^{\circ}C$. The major phase formed at peak hardeness in the aging at $160^{\circ}C$ was ${\delta}^{\prime}$ phase. The activation energies for the formation of ${\delta}^{\prime}$ and $T_1$ phases were 22.3kcal/mole and 24.3kcal/mole, respectively. These lower activation energies than those for diffusion of Cu and Li in Al are ascribed to the quenched-in excess vacancies.

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3 wt.% Cu 함유 STS 304 빌렛의 열간가공성과 표면결합에 미치는 δ-ferrite의 영향 (Effect of δ-Ferrite on the Hot Workability and Surface Defect of STS 304 Billets Containing 3 wt. % Cu)

  • 김상원
    • 한국재료학회지
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    • 제14권6호
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    • pp.379-388
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    • 2004
  • To investigate the effect of D-ferrite on the hot workability and surface defect of STS 304 billets containing 3 wt. % Cu, microstructure observations and high temperature mechanical properties test were carried out for the specimens extracted mainly from raw or oxidized billets. It was found that the total $\delta$-ferrite content has little influence on the hot workability, even though the fracture cracks due to high temperature tension or compression test were initiated and propagated mostly along $\delta$/${\gamma}$ boundary in the specimens. On the other hand, it was supposed that the direct causes of surface defects in the wire rolled from the as-continuously cast billet were the grain boundary embrittlement arose from the deep diffusion of oxygen into the grain boundary, and the oxidation of $\delta$-ferrite connected by a grain boundary to the surface during the billet reheating process as well.

내부 확산법에 의한 $Nb_3$Sn초전도선에 Ge 첨가에 따른 임계전류 및 미세조직 변화 (Influence of Ge addition on phase formation and electromagnetic properties in internal tin processed $Nb_3$Sn wires)

  • 하동우;오상수;이남진;하홍수;권영길;류강식;백홍구
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.496-499
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    • 2000
  • In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt% Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

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Ga2Se3 층을 Cu-In-Ga 전구체 위에 적용하여 제조된 Cu(In,Ga)Se2 박막의 Ga 분포 변화 연구 (Ga Distribution in Cu(In,Ga)Se2 Thin Film Prepared by Selenization of Co-Sputtered Cu-In-Ga Precursor with Ga2Se3 Layer)

  • 정광선;신영민;조양휘;윤재호;안병태
    • 한국재료학회지
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    • 제20권8호
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    • pp.434-438
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    • 2010
  • The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

Ag 코팅한 W-Ag 전기접점/Cu 모재간의 브레이징 접합 특성 (Brazing Adhesion Properties of Ag Coated W-Ag Electric Contact on the Cu Substrate)

  • 강현구;강윤성;이재성
    • 한국분말재료학회지
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    • 제13권1호
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    • pp.18-24
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    • 2006
  • The brazing adhesion properties of Ag coated W-Ag electric contact on the Cu substrate have been investigated in therms of microstructure, phase equilibrium and adhesion strength. Precoating of Ag layer ($3{\mu}m$ in thickness) on the $W-40\%Ag$ contact material was done by electro-plating method. Subsequently the brazing treatment was conducted by inserting BCuP-5 filler metal (Ag-Cu-P alloy) layer between Ag coated W-Ag and Cu substrate and annealing at $710^{\circ}C$ in $H_2$ atmosphere. The optimum brazing temperature of $710^{\circ}C$ was semi-empirically calculated on the basis of the Cu atomic diffusion profile in Ag layer of commercial electric contact produced by the same brazing process. As a mechanical test of the electric contact after brazing treatment the adhesion strength between the electric contact and Cu substrate was measured using Instron. The microstructure and phase equilibrium study revealed that the sound interlayer structure was formed by relatively low brazing treatment at $710^{\circ}C$. Thin Ag electro-plated layer precoated on the electric contact ($3{\mu}m$ in thickness) is thought to be enough for high adhesion strength arid sound microstructure in interface layer.

동매트를 이용한 망간 단괴의 환원 침출 (Reduction leaching of manganese nodule with copper matte)

  • 한오형;최경수
    • 자원리싸이클링
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    • 제4권3호
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    • pp.26-31
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    • 1995
  • 환원제로서 동매트를 사용하여 희박 염삼 용액에서 망간 단괴 침출 특성을 조사하였다. 동매트는 망간 단괴 침출에 있어서 매우 효과적인 환원제였으며 2.5M 용액으로 용액온도 $70^{\circ}C$에서 2시간 침출하는 경우 금속의 침출율은 각각 Mn 96%, Ni 95%, Co 91%, Cu 88%, Fe 36%였다. Mn, Co 및 Ni의 침출은 동매트의 첨가량에 의존하였으며 고체와 액체의 비율 또한 침출에 큰 영향을 미쳤다. 또한 침출용액의 온도 증가는 각 금속의 침출율을 향상시켰다. 망간 단괴로부터 Mn, Co, Ni 및 Cu의 침출속도는 동매트를 환원제로 사용하는 경우 표면 화학반응과 세공 확산에 의해 지배되었으며 이때의 각 금속의 활성화 에너지를 구한 결과 Mn, Co, Ni, Cu는 17.6, 12.8, 17.2 및 57.9 Kcal/mol이었다.

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무전해 Ni-P UBM과 95.5Sn-4.0Ag-0.5Cu 솔더와의 계면반응 및 신뢰성에 대한 연구 (A study on the interfacial reactions between electroless Ni-P UBM and 95.5Sn-4.0Ag-0.5Cu solder bump)

  • 전영두;백경욱
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.85-91
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    • 2002
  • Even though electroless Hi and Sn-Ag-Cu solder are widely used materials in electronic packaging applications, interfacial reactions of the ternary Ni-Cu~Sn system have not been known well because of their complexity. Because the growth of intermetallics at the interface affects reliability of solder joint, the intermetallics in Ni-Cu-Sn system should be identified, and their growth should be investigated. Therefore, in present study, interfacial reactions between electroless Ni UB7f and 95.5Sn-4.0Ag-0.5Cu alloy were investigated focusing on morphology of the IMCs, thermodynamics, and growth kinetics. The IMCs that appear during a reflow and an aging are different each other. In early stage of a reflow, ternary IMC whose composition is Ni$_{22}$Cu$_{29}$Sn$_{49}$ forms firstly. Due to the lack of Cu diffusion, Ni$_{34}$Cu$_{6}$Sn$_{60}$ phase begins growing in a further reflow. Finally, the Ni$_{22}$Cu$_{29}$Sn$_{49}$ IMC grows abnormally and spalls into the molten solder. The transition of the IMCs from Ni$_{22}$Cu$_{29}$Sn$_{49}$ to Ni$_{34}$Cu$_{6}$Sn$_{60}$ was observed at a specific temperature. From the measurement of activation energy of each IMC, growth kinetics was discussed. In contrast to the reflow, three kinds of IMCs (Ni$_{22}$Cu$_{29}$Sn$_{49}$, Ni$_{20}$Cu$_{28}$Au$_{5}$, and Ni$_{34}$Cu$_{6}$Sn$_{60}$) were observed in order during an aging. All of the IMCs were well attached on UBM. Au in the quaternary IMC, which originates from immersion Au plating, prevents abnormal growth and separation of the IMC. Growth of each IMC is very dependent to the aging temperature because of its high activation energy. Besides the IMCs at the interface, plate-like Ag3Sn IMC grows as solder bump size inside solder bump. The abnormally grown Ni$_{22}$Cu$_{29}$Sn$_{49}$ and Ag$_3$Sn IMCs can be origins of brittle failure.failure.

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Research of Diffusion Bonding of Tungsten/Copper and Their Properties under High Heat Flux

  • Li, Jun;Yang, Jianfeng
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 춘계학술발표대회
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    • pp.14-14
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    • 2011
  • W (tungsten)-alloys will be the most promising plasma facing armor materials in highly loaded plasma interactive components of the next step fusion reactors due to its high melting point, high sputtering resistance and low deuterium/tritium retention. The bonding technology of tungsten to Cu alloy was one of the key issues. In this paper, W/CuCrZr diffusion bonding has been performed successfully by inserting pure metal interlay. The joint microstructure, interfacial elements migration and phase composition were analyzed by SEM, EDS, XRD, and the joint shear strength and micro-hardness were investigated. The mock-ups were fabricated successfully with diffusion bonding and the cladding technology respectively, and the high heat flux test and thermal fatigue test were carried out under actively cooling condition. When Ni foil was used for the bonding of tungsten to CuCrZr, two reaction layers, Ni4W and Ni(W) layer, appeared between the tungsten and Ni interlayer with the optimized condition. Even though Ni4W is hard and brittle, and the strength of the joint was oppositely increased (217 MPa) due primarily to extremely small thicknesses (2~3 ${\mu}m$). When Ti foil was selected as the interlayer, the Ti foil diffused quickly with Cu and was transformed into liquid phase at $1,000^{\circ}C$. Almost all of the liquid was extruded out of the interface zone under bonding pressure, and an extremely thin residual layer (1~2 ${\mu}m$) of the liquid phase was retained between the tungsten and CuCrZr, which shear strength exceeded 160 MPa. When Ni/Ti/Ni multiple interlayers were used for bonding of tungsten to CuCrZr, a large number of intermetallic compound ($Ni_4W/NiTi_2/NiTi/Ni_3T$) were formed for the interdiffusion among W, Ni and Ti. Therefore, the shear strength of the joint was low and just about 85 MPa. The residual stresses in the clad samples with flat, arc, rectangle and trapezoid interface were estimated by Finite Element Analysis. The simulation results show that the flat clad sample was subjected maximum residual stress at the edge of the interface, which could be cracked at the edge and propagated along the interface. As for the rectangle and trapezoid interface, the residual stresses of the interface were lower than that of the flat interface, and the interface of the arc clad sample have lowest residual stress and all of the residual stress with arc interface were divided into different grooved zones, so the probabilities of cracking and propagation were lower than other interfaces. The residual stresses of the mock-ups under high heat flux of 10 $MW/m^2$ were estimated by Finite Element Analysis. The tungsten of the flat interfaces was subjected to tensile stresses (positive $S_x$), and the CuCrZr was subjected to compressive stresses (negative $S_x$). If the interface have a little microcrack, the tungsten of joint was more liable to propagate than the CuCrZr due to the brittle of the tungsten. However, when the flat interface was substituted by arc interfaces, the periodical residual stresses in the joining region were either released or formed a stress field prohibiting the growth or nucleation of the interfacial cracks. Thermal fatigue tests were performed on the mock-ups of flat and arc interface under the heat flux of 10 $MW/m^2$ with the cooling water velocity of 10 m/s. After thermal cycle experiments, a large number of microcracks appeared at the tungsten substrate due to large radial tensile stress on the flat mock-up. The defects would largely affect the heat transfer capability and the structure reliability of the mock-up. As for the arc mock-up, even though some microcracks were found at the interface of the regions, all microcracks with arc interface were divided into different arc-grooved zones, so the propagation of microcracks is difficult.

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Cu-SCR 촉매의 De-NOx 성능 향상을 위한 연구 (Research for Performance Improvement of De-NOx of Cu-SCR Catalysts)

  • 서충길
    • 한국산학기술학회논문지
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    • 제19권3호
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    • pp.112-118
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    • 2018
  • 화석연료를 기반으로 하는 내연기관의 엄격한 배기가스규제를 충족시키기 위해 자동차와 선박용 후처리장치의 비중이 점차로 증가하고 있다. 디젤엔진은 $CO_2$ 배출량이 적고 강력한 파워와 연료의 경제성을 가지고 있으며, 상용차뿐만 아니라 승용차에서도 시장의 수요가 증가하고 있다. 디젤 연료 특성으로 인하여 질소산화물은 국부적인 고온연소 영역에서 생성되며, 입자상물질은 확산연소 영역에서 생성이 된다. LNT와 urea-SCR 촉매는 디젤엔진에서 NOx를 저감시키기 위한 후처리장치로 개발되어져왔다. 이 연구는 가혹해지고 있는 배기가스 규제 대응을 위해 소형과 중 대형 디젤기관에 많이 사용되고 있는 Cu SCR 촉매의 NOx 저감 성능 향상을 목적으로 한다. $5Cu-2ZrO_2$/Zeolyst(Si/Al=13.7)SCR 촉매는 $5Cu-2ZrO_2$/93Zeolite(Si/Al=2.9) 촉매에 비해 촉매온도 $300^{\circ}C$ 이상에서 약 5-50% 수준으로 de-NOx 성능이 높았다. Zeolite는 zeolyst에 비해 금속의 분산도가 낮고 평균 입경이 커짐에 따라 촉매의 반응속도가 저하되었다. 10wt% Cu가 담지된 $10Cu-2ZrO_2$/88Zeolyst 촉매는 $200^{\circ}C$에서 40%, $350^{\circ}C$에서 약 65%로 NOx 정화성능이 가장 높았고, Cu의 이온이 제올라이트의 결정화합물인 Al과의 이온교환율이 증가함에 따라 다른 촉매에 비해 20-40% de-NOx 성능이 향상되었다.

Graphene Oxide 첨가에 따른 Sn-3.0Ag-0.5Cu 무연솔더 접합부의 Electromigration 특성 분석 (Effects of Graphene Oxide Addition on the Electromigration Characteristics of Sn-3.0Ag-0.5Cu Pb-free Solder Joints)

  • 손기락;김가희;고용호;박영배
    • 마이크로전자및패키징학회지
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    • 제26권3호
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    • pp.81-88
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    • 2019
  • 본 연구에서는 그래핀 산화(graphene oxide, GO) 분말 첨가가 ball grid array(BGA) 패키지와 printed circuit board(PCB)간 Sn-3.0Ag-0.5Cu(SAC305) 무연솔더 접합부의 electromigration(EM) 수명에 미치는 영향에 대하여 보고 하였다. 솔더 접합 직후, Ni/Au표면처리된 패키지 접합계면에서는 $(Cu,Ni)_6Sn_5$가 생성되었으며 organic solderability preservative(OSP) 표면처리 된 PCB 접합계면에서는 $Cu_6Sn_5$ 금속간화합물(intermetallic compound, IMC)이 생성되었다. $130^{\circ}C$, $1.0{\times}10^3A/cm^2$ 전류밀도 하에서 EM 수명평가 결과, GO를 첨가하지 않은 솔더 접합부의 평균 파괴 시간은 189.9 hrs으로 도출되었고, GO를 첨가한 솔더 접합부의 평균 파괴 시간은 367.1 hrs으로 도출되었다. EM에 의한 손상은 패키지 접합계면에 비하여 pad 직경이 작은 PCB 접합계면에서 전자 유입에 의한 Cu의 소모로 인하여 발생하였다. 한편, 첨가된 GO는 하부계면의 $Cu_6Sn_5$ IMC와 솔더 사이에 분포하는 것을 확인하였다. 따라서, SAC305 무연솔더에 첨가된 GO가 전류 집중 영역에서 Cu의 빠른 확산을 억제하여 우수한 EM 신뢰성을 갖는 것으로 생각된다.