• Proceedings of the KWS Conference
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• 2005.11a
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• pp.262-264
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• 2005

$Bi_{2}Sr_{2}CaCu_{2}O_{x}$(Bi-2212) and $Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{y}$(Bi-2223) high-$T_{c}$ superconductor(HTS) coating have been prepared by plasma spraying and heaat treatment. The Bi-2212 HTS coating later is synthesized through the peritectic reaction between Sr-Ca-Cu oxide coating layer and Bi-Cu oxide coating later, and $Bi_{2}Sr_{2}CaCu_{2}O_{y}$(Bi-2212) superconducting phase grow by partial melting process. The superconducting characteristic depends strongly on the conditions of the partial melting process. the Bi-2212 HTS layer consists of the whiskers grown in the diffusion direction. Above the 2212 layer, Bi-2223 phase and secondary phase was observed. The secondary phase is distributed uniformly over the whole surface. This is caused to the microcrack on the coatings surface. Despite everything, the film shows superconducting with an onset $T_{c}$ of about 115K. There are two changes steps. One changes (1step) at 115K is due to the diamagnetism of the Bi-2223 phase and the other changes (2step) at 78K is due to the diamagnetism of the Bi-2212 phase.

• Progress in Superconductivity and Cryogenics
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• v.1 no.1
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• pp.1-6
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• 1999

The microstructures of top seed mult processde $\textrm{YBa}_2\textrm{Cu}_3\textrm{O}_7$.$\delta$ single crystal were studied. Although shape of the seed was not faceted. the growth shape of Y123 single crystal was faceted. It was observed that Y211 phases were trapped in specific spaces of the faceted region. From the microstructural investigation. it was suggested that the segregation of Y211 is due to the difference of growth rates in crystal direction. When a single crystal was grown by the single seed with stepped multi surfaces. a microstrue was grown from multi-seed. The microstructure show the possibility of multi-seed growth. Corn kernel like structure without Y211 phase was observed and seemed to be formed by the diffusion reaction between Y211 phase in crystal and liquid wetted on the crystal. the diagonal line on Y123 crystal was observed that it was formed by the corn kernel like structure.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.199-208
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• 1994

In this study, the ultrasound which provides the properties of mixing, and surface cleaning effect, the increase of the effective reaction surface area and the enhancement of the effective collision frequency, was used to enhance the recovering efficiency of Cu from the Cu-ion containning waste water. The ultrasonic reactor used in this study was designed and constructed for improving the disadvantage of the existing ultrasonic reactor. From the experimental result and its analysis, we obtained following conclusions. 1. The ultrasound increased the rate of electrochemical deposition to 582.2% in maximum at the condition of $0.1M-CuSO_4$, and 2.1 V-overpotential. 2. The enhancement effect of ultrasound induced by the reduction of diffusion layer thickness was 277.8% in maximum and induced by the other effect except for the reduction effect of the diffusion layer thickness was 253.6% in maximum at $0.1M-CuSO_4$ and 2.1V overpotential. 3. This study gave the possibility of the scale-up of ultrasonic reactor and in particular, ultrasonic reactor would be effective in the treatment of waste water containning a low concentration of Cu ion.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.43-46
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• 1999

The microstructure of Top Seed Milt-Processed $YBa_{2}$$Cu_{3}$$O_{7-\delta}$ single crystal was studied. It was presumed that the segregation of Y211 is due to the difference of growth rates between a, b axis and c axis in crystal direction. Corn kernel lide structure which was grown by the diffusion of Y211 was observed. At the near corner of the seed crystal, the diagonal line on Y123 cry crystal is formed by the corn kernel like structure.

• Journal of Korea Foundry Society
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• v.10 no.5
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• pp.399-407
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• 1990

The effect of thermal cycling and isothermal exposure on the high temperature microstructural stability of unidirectionally solidified $Al-CuAl_2$ eutectic composite has been studied. A coarsening procedures of lamellar eutectic structures were initiated at growth fault region because of diffusion through low angle boundary at this region. It was considered that thermally induced residual stresses produced by thermal cycling were high enough to increase the dislocation density in Al-rich matrix phase. However, it was also considered that dislocations generated by these high thermal stresses were annihilated at high temperature by stress relaxation. Consequently, the thermal cycling up to 1440 cycles between 20 and $520^{\circ}C$ did not affect the microstructural stability.

• Journal of Powder Materials
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• v.1 no.1
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• pp.60-65
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• 1994

When a commercial prealloyed Fe-powder(Fe-5Cr-lMo-2Cu-0.5P-3C) is liquid phase sintered at 116$0^{\circ}C$, liquid precipitates with various shapes form within solid grains during the initial stage of sintering. The shape of a liquid precipitate changes pith the increment of their size from sphere(with radius<0.3$\mu\textrm{m}$), a transient polyhedron with more than 7 faces(1~2 $\mu\textrm{m}$), cuboid(3~5 $\mu\textrm{m}$), and finally to sphere(>5 $\mu\textrm{m}$). The shapes of liquid precipitates closely resemble the growth shapes predicted on the basis of solid-liquid interfacial energy and the coherency strain energy with anisotropic elastic constants in the diffusion zone around the precipitates.

• Journal of Welding and Joining
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• v.31 no.3
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• pp.17-21
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• 2013

Sn whiskers are one of the serious causes of the failure of electronics. Sn whiskers grow spontaneously from Sn-based, lead-free finished surfaces, even at room temperature. A primary factor of these Sn whiskers growth is compressive stress, which enhances the diffusion of Sn or other elements. The sources of compressive stress are the growth of non-uniform large intermetallic compounds along the interface between the Sn grain boundary and Cu substrate. Recent studies revealed the methods for reducing Sn whisker growth. This paper gives an overview about recent researches for mitigation methods of Sn whisker growth during nearly room temperature storage.

• Journal of Magnetics
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• v.6 no.4
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• pp.129-131
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• 2001

In order to investigate the effect of the interface on GMR, [NiFe(25 ${\AA}$)/Cu(24${\AA}$)]$_2$/Si thin film was epitaxially grown on HF-treated Si (001) substrate using a DC magnetron sputtering method. Typical GMR effects could be observed in epitaxial film with a weak antiferromagnetic exchange coupling while non epitaxial film showed unsaturated and broad MR curves probably due to inter-diffusion between NiFe and Cu layers. Ferromagnetic resonance (FMR) experiment showed two distinct absorption peaks in all films. Each peak was revealed to come from each NiFe layer with different magnetic property. In FMR measurement very clear interface in epitaxial films could be confirmed by a lower value of line width (ΔH) and higher M$\sub$s/ of epitaxial film than those of non epitaxial films, respectively.

• Proceedings of the KWS Conference
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• 2005.06a
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• pp.34-36
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• 2005

Copper wire bonding is an alternative interconnection technology that serves as a viable and cost saving alternative to gold wire bonding. In this paper, ultrasonic wedge bonding with $25{\mu}m$ copper wire on Au/Ni/Cu metallization of a PCB substrate was performed at ambient temperature. The central composite design of experiment (DOE) approach was applied to optimize the copper wire wedge bonding process parameters. After that, pull test of the wedge bond was performed to study the bond strength and to find the optimum bonding parameters. SEM was used to observe the cross section of the wedge bond. The pull test results show good performance of the wedge bond. Additionally, DOE results gave the optimized parameter for both the first bond and the second bond. Cross section analysis shows a continuous interconnection between the copper wire and Au/Ni/Cu metallization. The diffusion of Cu into the Au layer was also observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.10a
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• pp.36-40
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• 1988

High TC Y-Ba-Cu-O Superconductors were fabricated by sintering, sinter+HIP encapsulation. Specimens were sintered at 920$^{\circ}C$∼960$^{\circ}C$. A part of sintered specimens were treated by HIP, and HIP conditions were 150 MPa, 880$^{\circ}C$, 30min under the Ar atmosphere. The relative density of HIP specimens was increased 5∼8% in comparison with sintered one(90∼93% relative density). X-ray analysis represented the orthorhobic-tetragonal phase transition with annealing condition. Tc measurements showed a sharp drp within 3$^{\circ}C$, 91K onset and 89K offset. Transport current density(Jc) of sintered specimens showed typically∼159A/㎤ but that of sinter+HIP encapsulation was decreased to∼89A/㎤ because of insufficient oxygen diffusion, Hardness(H) and Toughness(Kc) were increased to 38GPa; and 2.9 MPam$\^$$\frac{1}{2}$/, respectively.