• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.152-152
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• 1999

• Proceedings of the Korean Vacuum Society Conference
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• 2003.08a
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• pp.146-146
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• 2003

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.81-81
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• 2001

• Proceedings of the KWS Conference
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• 1996.10a
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• pp.56-57
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• 1996

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.58-58
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.35-35
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• 1998

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.518-522
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• 2008

The miniaturization of device size and multilevel interlayers have been developed by ULSI circuit devices. These submicron processes cause serious problems in conventional metallization due to the solubility of silicon and metal at the interface, such as an increasing contact resistance in the contact hole and interdiffusion between metal and silicon. Therefore it is necessary to implement a barrier layer between Si and metal. Thus, the size of multilevel interconnection of ULSI devices is critical metallization schemes, and it is necessary reduce the RC time delay for device speed performance. So it is tendency to study the Cu metallization for interconnect of semiconductor processes. However, at the submicron process the interaction between Si and Cu is so strong and detrimental to the electrical performance of Si even at temperatures below $200^{\circ}C$. Thus, we suggest the tungsten-carbon-nitrogen (W-C-N) thin film for Cu diffusion barrier characterized by nano scale indentation system. Nano-indentation system was proposed as an in-situ and nanometer-order local stress analysis technique.

• Journal of Environmental Science International
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• v.23 no.11
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• pp.1843-1850
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• 2014

PS-D2EHPA beads were prepared by immobilizing di-2-ethylhexyl-phosphoric acid (D2EHPA) with polysulfone (PSf). The removal experiments of Cu(II) and Pb(II) by the prepared PS-D2EHPA beads were conducted batchwise. The removal efficiency of Cu(II) and Pb(II) by PS-D2EHPA beads was increased with increasing pH of solution. The removal rate of Cu(II) and Pb(II) was well described by the pseudo-second-order kinetic model. The maximum removal capacity of Cu(II) and Pb(II) obtained from Langmuir isotherm were 2.58 mg/g and 12.63 mg/g, respectively. External mass transfer coefficients for the removal of Cu(II) and Pb(II) by PS-D2EHPA beads were obtained $0.61{\times}10^{-2}{\sim}5.87{\times}10^{-2}/min$ and $1.55{\times}10^{-2}{\sim}8.53{\times}10^{-2}/min$, respectively and diffusion coefficients were obtained $1.32{\times}10^{-4}{\sim}3.98{\times}10^{-4}cm^2/min$ and $1.80{\times}10^{-4}{\sim}2.28{\times}10^{-4}cm^2/min$, respectively.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2067_2068
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, $Cu_6Sn_5({\mu})$ and $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface. $Cu_6Sn_5({\mu})$ intermetallics layer gradually changed $Cu_3Sn({\varepsilon})$. Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.