• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.173-174
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• 2007

반도체 소자가 발달함에 따라서 박막은 더욱 다층화 되고 그 두께는 줄어들고 있다. 따라서 소자의 초고집적화를 위해서는 각 박막의 두께를 더욱 작게 하여야 한다. 또한 반도체 소자 제조 공정에서는 Si 기판과 금속 박막간의 확산이 커다란 문제로 부각되어 왔다. 특히 Cu는 높은 확산성에 의하여 Si 기판과 접합에서 많은 확산에 의한 문제가 발생하게 되며, 또한 선폭이 줄어듦에 따라 고열이 발생하여 실리콘으로 spiking이 발생하게 된다. 이러한 확산을 방지하기 위하여 금속 배선과 Si기판 사이에는 필연적으로 확산방지막을 삽입하게 되었다. 기존의 연구에서는 $1000\;{\AA}$의 W-B-C-N 확산방지막을 제작하여 연구하였다. 이 논문에서는 Cu의 확산을 방지하기 위한 W-B-C-N 확산방지막을 다양한 두께로 제작하여 그 특성을 확인하여 초고집적화를 위한 더욱 얇은 두께의 W-B-C-N 확산방지막에 대하여 연구하였다. W-B-C-N 확산방지막의 두께 변화에 대한 특성을 확인하기 위하여 $900^{\circ}C$까지 열처리 한 후 그 면저항을 측정하였다.

• Journal of the Korean Solar Energy Society
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• v.33 no.4
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• pp.31-38
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• 2013

The chemical composition of the black Cr solar selective coatings electrodeposited were investigated for property analysis by using a XPS(X-ray photoelectron spectroscopy) before and after annealing in air at $300^{\circ}C{\sim}500^{\circ}C$ for 120 hours. Black Cr selective coating exposed by solar radiation for 5 months was compared with annealed sample. In addition, The Cu solar selective coatings were prepared by thermal oxidation method for low temperature application. The samples obtained were characterized by using the optical reflectance measurements by using a spectrometer. Optical properties of oxidized Cu solar coatings were solar absorptance $({\alpha}){\simeq}0.62$ and thermal emittance $({\epsilon}){\simeq}0.41(100^{\circ}C)$. In the as-prepared Cr black selective coating, the surface of the coating was found to have Cr hydroxide and Cr. The Cr hydroxide of the major component was converted to $Cr_2O_3$ or $CrO_3$ form after annealing at $500^{\circ}C$ with the desorption of water molecules. The black Cr selective coating was degraded significantly at temperature of $500^{\circ}C$. The main optical degradation modes of this coating were diffusion of Cu substrate materials.

• Journal of Powder Materials
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• v.29 no.5
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• pp.357-362
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• 2022

The low-temperature sinterability of TiO₂-CuO systems was investigated using a solid solution of SnO₂. Sample powders were prepared through conventional ball milling of mixed raw powders. With the SnO₂ content, the compositions of the samples were Ti_1-xSn_xO₂-CuO(2 wt.%) in the range of x ≤ 0.08. Compared with the samples without SnO₂ addition, the densification was enhanced when the samples were sintered at 900℃. The dominant mass transport mechanism seemed to be grain-boundary diffusion during heat treatment at 900℃, where active grain-boundary diffusion was responsible for the improved densification. The rapid grain growth featured by activated sintering was also obstructed with the addition of SnO₂. This suggested that both CuO as an activator and SnO₂ dopant synergistically reduced the sintering temperature of TiO₂.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.3
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• pp.67-74
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• 2011

Keys to high wiring density semiconductor packages include flip-chip bonding and build-up substrate technologies. The current issues are the establishment of a fine pitch flip-chip bonding technology and a low coefficient of thermal expansion (CTE) substrate technology. In particular, electromigration and thermomigration in fine pitch flipchip joints have been recognized as a major reliability issue. In this paper, electromigration and thermomigration in Cu/Sn-3Ag-0.5Cu (SAC305)/Cu flip-chip joints and electromigration in Cu/In/Cu flip chip joints are investigated. In the electromigration test, a large electromigration void nucleation at the cathode, large growth of intermetallic compounds (IMCs) at the anode, a unique solder bump deformation towards the cathode, and the significantly prolonged electromigration lifetime with the underfill were observed in both types of joints. In addition, the effects of crystallographic orientation of Sn on electromigration were observed in the Cu/SAC305/Cu joints. In the thermomigration test, Cu dissolution was accelerated on the hot side, and formation of IMCs was enhanced on the cold side at a thermal gradient of about $60^{\circ}C$/cm, which was lower than previously reported. The rate of Cu atom migration was found comparable to that of electromigration under current conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.2
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• pp.134-140
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• 2019

Oxide ($SnO_2$)/metal alloy (Cu(Ni))/oxide ($SnO_2$) multilayer films were fabricated using the magnetron sputtering technique. The oxide and metal alloy were $SnO_2$ and Ni-doped Cu, respectively. The structural, optical, and electrical properties of the multilayer films were investigated using X-ray diffraction (XRD), ultraviolet-visible (UV-vis) spectrophotometry, and 4-point probe measurements, respectively. The properties of the $SnO_2/Cu(Ni)/SnO_2$ multilayer films were dependent on the thickness and Ni doping of the mid-layer film. Since Ni atoms inhibit the diffusion and aggregation of Cu atoms, the grain growth of Cu is delayed upon Ni addition. For $250^{\circ}C$, the Haccke's figure of merit (FOM) of the $SnO_2$ (30 nm)/Cu(Ni) (8 nm)/$SnO_2$ (30 nm) multilayer film was evaluated to be $0.17{\times}10^{-3}{\Omega}^{-1}$.

• Progress in Superconductivity and Cryogenics
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• v.24 no.3
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• pp.30-34
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• 2022

Effects of electron beam (EB) irradiation on the mechanical strength of Cu (conducting sheath) and Nb (diffusion barrier) of Cu/Nb/MgB₂ superconducting was investigated. Wire- and tape-type Cu/Nb/MgB₂ samples were irradiated at E-beam energy of 2.5 MeV and 5 mA and a maximum E-beam dose was 5×10¹⁷ e/m². The hardness value of Cu and Nb region was measured by the Vickers micro-hardness method. In the case of the wire sample, the hardness of Cu and Nb increased proportionally as the dose was increased up to 5×10¹⁷ e/m², whereas in the case of the tape sample, the hardness increased up to a dose of 0.5×10¹⁷ e/m², and decreased slightly 5×10¹⁷ e/m². The hardness increase of Cu and Nb is believed to be due to the decrease of the deformability of Cu and Nb due to the defects formed inside the materials by E-beam irradiation.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Journal of the Semiconductor & Display Technology
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• v.4 no.2 s.11
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• pp.39-43
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• 2005

In the study, in order to deposit TaN thin film for diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristics of TaN thin films grown PAALD method. Plasma Assisted ALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamino) tantalum) precursor and NH3 reaction gas is shown that TaN thin film deposited high density and amorphous phase with XRD measurement. The degree of diffusion and reaction taking place in Cu/TaN (deposited using 150W PAALD)/$SiO_{2}$/Si systems with increasing annealing temperature was estimated for MOS capacitor property and the $SiO_{2}$, (600${\AA}$)/Si system surface analysis by C-V measurement and secondary ion material spectrometer (SIMS) after Cu/TaN/$SiO_{2}$ (400 ${\AA}$) layer etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to 500$^{\circ}C$.

• Current Photovoltaic Research
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• v.9 no.3
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• pp.96-105
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• 2021

Even though above 22% efficiencies have been reported in Cd-free Cu(In,Ga)Se₂ (CIGS) solar cell with Zn-containing buffers, the efficiencies with Zn-containing buffers, in general, are well below 20%. One of the reasons is Zn diffusion from the Zn-containing buffer layer to CIGS film during buffer growth. To avoid the degradation, it is necessary to prevent the diffusion of Zn atoms from Zn-containing buffer to CIGS film. For the purpose, we characterized an In₂Se₃ film as a possible diffusion barrier layer because In₂Se₃ has no Zn component. It was found that an In₂Se₃ layer grown at 300℃ was very effective in preventing Zn diffusion from a Zn-containing buffer. Also, the In₂Se₃ had a large potential barrier in the valence band at the In₂Se₃/CIGS interface. Therefore, In₂Se₃ passivation has the potential to achieve a super-high efficiency in CIGS solar cells that employ Cd-free ALD processed buffers containing Zn.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.1
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• pp.31-37
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• 1999

In this study, the thermal property and adhesion of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu /TaN /Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature for the multilayered Cu /TaN /Si specimen which was annealed at atmospheres of $H_2$and Ar gases, respectively. The adhesion strength of Cu films was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than that of sputtered Cu film and evaporated Cu film.