• Journal of the Korean Society of Industry Convergence
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• v.22 no.6
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• pp.767-773
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• 2019

The thermal diffusion performance of the electronic device is a factor for evaluating the stability of the electronic device. Therefore, many of research have been conducted to improve the thermal characteristics of thermal interface materials, which are materials for thermal diffusion of electronic products. In this study, nano thermal grease was prepared by blending graphene, silver and copper nano powders into a thermal grease, a type of thermal interface materials, and the heat transfer rate was measured and compared for the purpose of investigating the improved thermal properties. As a result, the thermal properties were good in the order of graphene, silver and copper, which is thought to be due to the different thermal properties of the nano powder itself.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1729-1731
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• 1999

The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor region due to diffusion of Na from soda-lime glass but was mainly determined by the surface resitivity controlled by excess Na.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.148-151
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• 1995

Excimer laser has been used to fabricate superconducting YBa$_2$Cu$_3$O$\sub$7-x/(YBCO) thin films on various substrates. An XeCl excimer laser with an wavelength of 308 nm was used to deposit both buffer layer and superconducting thin film on sapphire substrate. The characterizations of the interface between thin film and substrate were performed. The interfacial properties of thin films on buffered sapphire and on bare sapphire were compared. With a 20 nm PrBa$_2$Cu$_3$O$\sub$7-x/(PBCO) buffer layer, no diffusion layer was observed between film and substrate while the diffusion layer with about 30 nm thickness was observed between film and sapphire without buffer layer.

• Journal of the Korean institute of surface engineering
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• v.47 no.4
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• pp.162-167
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• 2014

The primary purpose of this research is to investigate how much the complexing agent in electroless Cu electrolytes will affect adhesion strength between copper film and Ta diffusion barrier for Cu interconnect of semiconductor. The adhesion strength using rochelle's salt as complexing agent was higher than the case of using EDTA-4Na. Effect of complexing agent on adhesion strength and electrical resistivity was studied in crystal structural point of view.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.306-307
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• 2006

The sinter-bonding behavior of iron based powder mixtures was investigated. To produce the green compacts to be joined the following powders based on $H{\ddot{o}}gan{\ddot{a}}s$ AB grade NC 100.24 plain iron powder were used: NC 100.24 as delivered, PNC 30, PNC 60 and NC 100.24 + 4%Cu powder mixtures. Dimensional behaviour of all those materials during the sintering cycle was monitored by dilatometry. Simple ring shaped specimens as the outer parts and cylindrical as the inner parts were pressed. The influence of parts' composition on joining strength was established. Diffusion of alloying elements: copper and phosphorous, across the bonding surface was controlled by metallography, SEM and microanalysis.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.1
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• pp.39-46
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• 2021

The quantitative measurement of interfacial adhesion energy (Gc) of multilayer thin films for Cu interconnects was investigated using a double cantilever beam (DCB) and 4-point bending (4-PB) test. In the case of a sample with Ta diffusion barrier applied, all Gc values measured by the DCB and 4-PB tests were higher than 5 J/㎡, which is the minimum criterion for Cu/low-k integration without delamination. However, in the case of the Ta/Cu sample, measured Gc value of the DCB test was lower than 5 J/㎡. All Gc values measured by the 4-PB test were higher than those of the DCB test. Measured Gc values increase with increasing phase angle, that is, 4-PB test higher than DCB test due to increasing plastic energy dissipation and roughness-related shielding effects, which matches well interfacial fracture mechanics theory. As a result of the 4-PB test, Ta/Cu and Cu/Ta interfaces measured Gc values were higher than 5 J/㎡, suggesting that Ta is considered to be applicable as a diffusion barrier and a capping layer for Cu interconnects. The 4-PB test method is recommended for quantitative adhesion energy measurement of the Cu interconnect interface because the thermal stress due to the difference in coefficient of thermal expansion and the delamination due to chemical mechanical polishing have a large effect of the mixing mode including shear stress.

• Journal of the Korean Ceramic Society
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• v.35 no.1
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• pp.55-65
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• 1998

The oxidation behavior of Ag-36.8a%Cu-7.4at%Ti alloy brazed on Si3N4 substrate was investigated at 400, 500 and 600$^{\circ}C$ in air. Under this experimental condition Si3N4 and Ag were not oxidized whereas Cu and Ti among the brazing alloy components were oxidizied obeying the parabolic oxidation rate law. The activation energy of oxidation was found to be 80kj/ mol which was smaller than that of pure Cu owing to the presence of oxygen active element of Ti. The outer oxide scale formed from the initial oxidation state was always composed of Cu oxides which were known to be growing by the outward diffusion of Cu ions. As the oxidation progressed the concentration gradient occurred due to the continuous consumption of Cu as Cu oxides and consequently build-up of an Ag-enriched layer below the Cu oxides resulted in the formation of multiple oxide scales composed of Cu oxide (CuO) /Ag-enriched layer/Cu oxide (Cu2O) /Ag-enriched layer. Also the inward diffusing of oxygen through Cu oxide and Ag-enriched layers led to the formation of internal oxides of TiO2.

• The Journal of Engineering Geology
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• v.18 no.3
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• pp.257-262
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• 2008

In the study it was investigated the diffusion characteristics of heavy metal pollutions such as Cu, Pb, Hg and As which was the main pollution sources of soils from abandoned mines. The pollution of Cu and Pb was caused by Mine A, that of Hg was caused by Mine 3, that of Pb was caused by Mine C and that of Cu, Pb, As was caused by Mine D. Though the high concentration was detected within 100m from abandoned mines, the low concentration was detected over than 100m from abandoned mines in all heavy metals investigated except As. It means that it was very difficult to estimate the pollution level of As caused abandoned mines. The results were discussed in the concentrations of Cu, Pb and distances showed a good relationship with 0.71 and 0.68 as the coefficient of correlation, respectively. In particular the relativity of Cu to Pb as very strong with 0.84 as the coefficient of correlation. It was consistent with the chemical behavior in soils in the case of Cu and Pb. Therefore it will be a promising approach to remove Cu and Pb with estimated values in the study.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.77-82
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• 2015

To increase the performance of solid oxide fuel cell operating at intermediate temperature ($600^{\circ}C{\sim}800^{\circ}C$), $Sm_{0.2}Ce_{0.8}O_2$ (SDC) thin layer was applied to the $La_{0.8}Sr_{0.2}Mn_{0.8}Cu_{0.2}O_3$ (LSMCu) cathode by sol-gel coating method. The SDC was employed as a diffusion barrier layer on the yttria-stabilized zirconia(YSZ) to prevent the interlayer by-product formation of $SrZrO_3$ or $La_2Zr_2O_7$. The by-products were hardly formed at the electrolyte-cathode interlayer resulting to reduce the cathode polarization resistance. Moreover, SDC thin film was coated on the cathode pore wall surface to extend the triple phase boundary (TPB) area.

• Environmental Engineering Research
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• v.18 no.1
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• pp.45-53
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• 2013

Biocarrier beads with dead biomass, Bacillus drentensis, immobilized in polymer polysulfone were synthesized to remove heavy metals from wastewater. To identify the sorption mechanisms and theoretical nature of underlying processes, a series of batch experiments were carried out to quantify the biosorption of Pb(II) and Cu(II) by the biocarrier beads. The parameters obtained from the thermodynamic analysis revealed that the biosorption of Pb(II) and Cu(II) by biomass immobilized in biocarrier beads was a spontaneous, irreversible, and physically-occurring adsorption phenomenon. Comparing batch experimental data to various adsorption isotherms confirmed that Koble-Corrigan and Langmuir isotherms well represented the biosorption equilibrium and the system likely occurred through monolayer sorption onto a homogeneous surface. The maximum adsorption capacities of the biocarrier beads for Pb(II) and Cu(II) were calculated as 0.3332 and 0.5598 mg/g, respectively. For the entire biosorption process, pseudo-second-order and Ritchie second-order kinetic models were observed to provide better descriptions for the biosorption kinetic data. Application of the intra-particle diffusion model showed that the intraparticle diffusion was not the rate-limiting step for the biosorption phenomena. Overall, the dead biomass immobilized in polysulfone biocarrier beads effectively removed metal ions and could be applied as a biosorbent in wastewater treatment.