• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.106-109
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• 2016

The YBaCuO superconducting bulks were prepared by the thermal diffusion process involving the peritectic reaction to investigate the effect on microstructure and superconductivity. All the diffused YBaCuO could be successively separated from superconducting 123 phase by applying the thermal diffusion process. Electromagnetic properties of treated and untreated YBaCuO superconductor were evaluated to investigate the pinning effect. It was confirmed experimentally that a large amount of magnetic flux was trapped in the thermal treated superconducting bulk than that in the untreated one, indicating that the pinning centers of magnetic flux are related closely to the occurrence mechanism of the magnetic effect.

• Korean Journal of Metals and Materials
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• v.50 no.10
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• pp.775-783
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• 2012

The effect of thermal annealing on the in-situ growth characteristics of intermetallics (IMCs) and the mechanical strength of Cu pillar/Sn-3.5Ag microbumps are systematically investigated. The $Cu_6Sn_5$ phase formed at the Cu/solder interface right after bonding and grew with increased annealing time, while the $Cu_3Sn$ phase formed at the $Cu/Cu_6Sn_5$ interface and grew with increased annealing time. IMC growth followed a linear relationship with the square root of the annealing time due to a diffusion-controlled mechanism. The shear strength measured by the die shear test monotonically increased with annealing time. It then changed the slope with further annealing, which correlated with the change in fracture modes from ductile to brittle at a critical transition time. This is ascribed not only to the increasing thickness of brittle IMCs but also to the decreasing thickness of the solder, as there exists a critical annealing time for a fracture mode transition in our thin solder-capped Cu pillar microbump structures.

• Journal of the Korean institute of surface engineering
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• v.28 no.4
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• pp.243-254
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• 1995

The fabrication process of Cu-base anode for replacing Ni-base anode of molten carbonate fuel cell was investigated. Electrochemical performance and thermal stability of Cu-base anode were also investigated. Green sheet was prepared by mixing Cu and Ni powder with 1.5wt% methylcellulose and 100wt% water. The pore-size distribution of the Cu-base anode sintered at $800^{\circ}C$ for 30min showed almost uniform pore-size ranging from 4 to 20$\mu\textrm{m}$ and it was considered suitable for MCFC anode. Cu-Ni anode containing between 35 to 50wt% Ni exhibited current density of 111mA/$\textrm{cm}^2$ at 100mV overpotential and it was almost the some value for pure Ni anode. The sintering resistance of Cu-Ni increased with an increase of Ni addition. It was considered that the increase of sintering resistance was due to the decrease of diffusion rate of Cu and Ni with increasing the addition of Ni in Cu-Ni alloy.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.2
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• pp.49-55
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• 2016

The effects of post-annealing and temperature/humidity conditions on the interfacial adhesion energies of atomic layer deposited RuAlO diffusion barrier layer for Cu interconnects were systematically investigated. The initial interfacial adhesion energy measured by four-point bending test was $7.60J/m^2$. The interfacial adhesion energy decreased to $5.65J/m^2$ after 500 hrs at $85^{\circ}C$/85% T/H condition, while it increased to $24.05J/m^2$ after annealing at $200^{\circ}C$ for 500 hrs. The X-ray photoemission spectroscopy (XPS) analysis showed that delaminated interface was RuAlO/$SiO_2$ for as-bonded and T/H conditions, while it was Cu/RuAlO for post-annealing condition. XPS O1s peak separation results revealed that the effective generation of strong Al-O-Si bonds between $AlO_x$ and $SiO_2$ interface at optimum post-annealing conditions is responsible for enhanced interfacial adhesion energies between RuAlO/$SiO_2$ interface, which would lead to good electrical and mechanical reliabilities of atomic layer deposited RuAlO diffusion barrier for advanced Cu interconnects.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.59-64
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• 2013

In-situ annealing tests of Cu/Ni/Au/Sn-Ag/Cu micro-bump for 3D IC package were performed in an scanning electron microscope chamber at $135-170^{\circ}C$ in order to investigate the growth kinetics of intermetallic compound (IMC). The IMC growth behaviors of both $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ follow linear relationship with the square root of the annealing time, which could be understood by the dominant diffusion mechanism. Two IMC phases with slightly different compositions, that is, $(Cu,Au^a)_6Sn_5$ and $(Cu,Au^b)_6Sn_5$ formed at Cu/solder interface after bonding and grew with increased annealing time. By the way, $Cu_3Sn$ and $(Cu,Au^b)_6Sn_5$ phases formed at the interfaces between $(Cu,Ni,Au)_6Sn_5$ and Ni/Sn, respectively, and both grew with increased annealing time. The activation energies for $Cu_3Sn$ and $(Cu,Ni,Au)_6Sn_5$ IMC growths during annealing were 0.69 and 0.84 eV, respectively, where Ni layer seems to serve as diffusion barrier for extensive Cu-Sn IMC formation which is expected to contribute to the improvement of electrical reliability of micro-bump.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.99-99
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• 2001

• Fire Science and Engineering
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• v.22 no.5
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• pp.43-47
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• 2008

Recently SIMS has attracted interest as new technique to distinguish the primary and the secondary arc beads. A Cs+ primary ion beam was used to detect the $^{12}C^-$, $^{63}Cu^-$, $^{18}O^-$, $^{35}Cl^-$ secondary ions which are formed during depth profiles in the copper wires. In this work, we studied thermal diffusion in the copper wire which are occurred with supplying over-current. The results demonstrated that Carbon and Chloride are diffused in PVC-coated copper wire deeper than none PVC-coated. However Oxygen showed the reverse diffusion property.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.52-58
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• 2013

Two different window-structured $CuInGaSe_2$(CIGS) solar cells, i.e., CIGS/thin-CdS/ZnO:B(sample A) and CIGS/very thin-CdS/Zn(S/O)/ZnO:B(sample B), were prepared, and the diffusivity of Zn, Cd, S, and B atoms, respectively, in the CIGS, ZnO or Zn(S/O) layer was estimated by a theoretical fit to experimental secondary ion mass spectrometer data. Diffusivities of Zn, Cd, S, and B atoms in CIGS were $2.0{\times}10^{-13}(1.5{\times}10^{-13})$, $4.6{\times}10^{-13}(4.4{\times}10^{-13})$, $1.6{\times}10^{-13}(1.8{\times}10^{-13})$, and $1.2{\times}10^{-12}cm^2/s$ at 423K, respectively, where the values in parentheses were obtained from sample B and the others from sample A. The diffusivity of the B atom in a Zn(S/O) of sample B was $2.1{\times}10^{-14}cm^2/sec$. Moreover, the diffusivities of Cd and S atoms diffusing back into ZnO(sample A) or Zn(S/O)(sample A) layers were extremely low at 423K, and the estimated diffusion coefficients were $2.2{\times}10^{-15}cm^2/s$ for Cd and $3.0{\times}10^{-15}cm^2/s$ for S.

• Korean Journal of Materials Research
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• v.17 no.8
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• pp.402-407
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• 2007

In electronics manufacturing processes, soldering process has generally been used in surface mounting technology. Because of environmental restriction, lead free solders as like a SnAgCu ternary system are being used widely. After soldering process, the formation and growth of intermetalic compounds(IMCs) are formed in the interface between solder and Cu substrate as follows isothermal temperature and time. In this studies, therefore, we investigated the effects of the Cu substrate thickness on the IMC formation and growth of Sn-40Pb/Cu and Sn-3.0Ag-0.5Cu/Cu solder joints, respectively. The effect of the Cu thickness in PCB Cu pad and pure Cu plate was analyzed as measuring of thickness of each IMC. After solder was soldered on PCB and Cu plate which have different Cu thickness, we measured the IMC thickness in solder joints respectively. Also we compared with the effectiveness of Cu thickness on the IMC growth. From these results, we calculated the activation energy.

• Applied Microscopy
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• v.24 no.4
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• pp.132-144
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• 1994

The application of TEM in investigating the evolution of microstructure during solid phase crystallization of the amorphous Si, $Si_{1-x}Ge_x,\;and\;Si_{1-x}Ge_x/Si$ films deposited on $SiO_2$ substrate, in identifying the failure mechanism of the TiN barrier layer in the Cu-metallization scheme, and in comparing the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films are discussed. First, it is identified that the evolution of microstructure in Si and $Si_{1-x}Ge_x$ alloy films strongly depends on the concentration of Ge in the film. Second, the failure mechanism of the TiN diffusion barrier in the Cu-metallization is the migration of the Cu into the Si substrate, which results in the formation of a dislocation along the Si {111} plane and precipitates (presumably $Cu_{3}Si$) around the dislocation. Finally, the microstructure of the as-deposited Cu-Cr and Cu-Ti alloy films is also quite different in these two cases. From these several cases, we demonstrate that the information which we obtained using TEM is critical in understanding the behavior of materials.