• 마이크로전자및패키징학회지
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• 제5권1호
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• pp.7-18
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• 1998

In the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as 1$\mu$m Al/0.2$\mu$m Pd/1$\mu$m Cu, laid under eutectic Pb/Sn solder were investigated with regard to their interfacial reactions and adhesion proper-ties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMCs) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1$\mu$m Al/0.2$\mu$m Ti/5$\mu$m Cu and 1$\mu$m Al/0.2$\mu$m ni/1$\mu$m Cu even after 4 solder reflows or 7 day aging at 15$0^{\circ}C$. In contrast 1$\mu$m Al/0.2$\mu$m Ti/1$\mu$m Cu and 1$\mu$mAl/0.2$\mu$m Pd/1$\mu$m 쳐 show poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. In this case thin 1$\mu$m Cu and 0.2$\mu$m Pd diffusion barrier layer were completely consumed by Cu-Sn and pd-Sn reaction.

• 한국주조공학회지
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• 제17권3호
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• pp.276-285
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• 1997

The effect of wheel surface condition on solidification behavior of Al-Cu ribbon was investigated in order to establish extreme levels of heat extraction. The condition of wheel surface was changed either by heating the wheel surface up to $200^{\circ}C$ or by coating boron nitride(BN) onto the the rim of a wheel. Heating the wheel surface up to $200^{\circ}C$ improved the wetting behavior between the molten metal and the rotating wheel, leading to an increase in the ratio of columnar structure to the entire thickness of Al-4.3wt%Cu and Al-33.2wt%Cu ribbons. For Al-4.3wt%Cu ribbon, assuming one grain as a single heterogeneous nucleation event at the contact point, the nucleation density with the wheel surface heated to $200^{\circ}C$, was $4{\times}10^6/mm^2$, and in the cases of BN coating with thin and thick layers, $10^5/mm^2$ and $5{\times}10^4/mm^2$, respectively. The largest cooling capacity of the wheel corresponded to the heated wheel surface, and as the thickness of BN coating layer increased, the cooling capacity of the wheel gradually decreased.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 학술대회 논문집 전문대학교육위원
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.123-124
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• 2005

We investigated the effect of a Ta/TaN Cu diffusion barrier existence on the reliability and the electrical performance of Cu dual-damascene interconnects. A high EM performance in Cu dual-damascene structure was observed the BCV(barrier contact via) interconnect structure to remain Ta/TaN barrier layer. Via resistance was decreased DCV interconnect structure by bottomless process. This structure considers that DCV interconnect structure has lower activation energy and higher current density than BCV interconnect structure. The EM failures by BCV via structure were formed at via hole, but DCV via structure was formed EM fail at the D2 line. In order to improve the EM characteristic of DCV interconnect structure by bottomless process, after Ta/TaN diffusion barrier layer in via bottom is removed by Ar+ resputtering process, it is desirable that Ta thickness is thickly made by Ta flash process.

• 공업화학
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• 제10권2호
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• pp.252-258
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• 1999

알콕시실란 중의 하나인 tetramethyl orthosilicate (TMOS)를 금속 규소와 메탄올을 출발물질로 구리계 촉매상에서 기상 반응시키는 직접합성법으로 제조할 때, 규소와 구리촉매 및 금속 염화물 조촉매로 이루어진 접촉물질의 제조 방법 및 온도가 생성물의 수율 및 선택도에 미치는 영향을 검토하였다. 이때 구리 촉매와 함께 Zn, Sn, Cd계 화합물을 조촉매로 사용하여 그 효과를 비교하였다. 구리 공급원으로 제일염화구리를 사용하고 염화아연을 조촉매로 사용한 2원 촉매계가 가장 적합하였으며, 구리/규소 = 7 wt %, 아연/구리 = 7 wt % 조성에서 함침법을 사용하여 규소와 혼합한 후 $380^{\circ}C$에서 활성화시킨 접촉물질을 제조하여 TMOS 합성에 사용하였을 때, 반응온도 $220^{\circ}C$에서 평균선택도 87.2% 규소소모율 69.2%를 나타냈다.

• Journal of Welding and Joining
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• 제22권4호
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• pp.35-42
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• 2004

Contact tips are required to have a higher resistance to wear and thus to have an extended life time under the advanced GMAW welding process. Several requirements have been specified and employed by domestic industries for selecting their tips for such a purpose. However no attempt has been made to justify their requirements based on the experimental data of wear resistance or life time of contact tips. In this study, five different contact tips with three different compositions were employed for actual GMA welding up to 4 hours and were evaluated their wear resistance by measuring in every one hour the area of enlarged hole at the exit side. Experimental results clearly showed that the Cr-containing tips strengthened by precipitation hardening have much better resistance to wear than those made by work hardening. It was further noticed that Cr is an excellent alloying element for improving the wear resistance of contact tips only when it is in an properly aged condition. Initial hardness may play some role in the early stage of wear but not in the later stage of welding because the microstructure of tip changes significantly by the prolonged exposure to welding arc heat. Based on these results, critical review has been made on the current requirements employed by domestic industries. Of importance is that a new guideline has been confirmed to be more reasonable.

• 한국주조공학회지
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• 제23권1호
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• pp.30-39
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• 2003

Porous hybrid preforms were fabricated by reactive sintering using the compacts consisting of SiC particles, Fe and Al powders. Squeeze casting processing was employed to produce the composite in which the matrix phase is Al-Si7Mg. The microstructural change and wear resistance of the composites were investigated in terms of an amount of SiC particles. The wear loss was increased with increasing the contact pressure in the alloy containing SiC particles coated with Cu. The most drastic change was found to the specimen tested at 2.5 MPa of contact pressure. Concerning the alloys containing SiC particles coated with Ni-P, a drastic increase in the wear loss exhibited at 2 MPa of contact pressure in those alloys containing 4 and 8 wt. % of SiC particles coated with Ni-P. In the alloy containing 16 wt. % a proportional increase in wear loss was observed to the change of contact pressure. With respecting to the sliding velocity, the wear loss of the alloy containing SiC particles coated with Cu increased at the initial stage of wear process and then decreased. Similar result was found in the alloys containing SiC particles coated with Ni-P. On the basis of the present results obtained, it was found that wear resistance of the alloys tested was improved to show in the order of the alloy reinforced by coated SiC particles > by uncoated SiC particles > by intermetallic compound without SiC particles.

• 마이크로전자및패키징학회지
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• 제25권4호
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• pp.155-161
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• 2018

강성도가 서로 다른 polydimethylsiloxane (PDMS) 탄성고분자와 flexible printed circuit board (FPCB)로 이루어진 PDMS/FPCB 구조의 강성도 국부변환 신축기판에 $100{\mu}m$ 직경의 Cu/Au 범프를 갖는 Si 칩을 anisotropic conductive adhesive (ACA)를 사용하여 플립칩 본딩 후, ACA내 전도성 입자에 따른 플립칩 접속저항을 비교하였다. Au 코팅된 폴리머 볼을 함유한 ACA를 사용하여 플립칩 본딩한 시편은 $43.2m{\Omega}$의 접속저항을 나타내었으며, SnBi 솔더입자를 함유한 ACA로 플립칩 본딩한 시편은 $36.2m{\Omega}$의 접속저항을 나타내었다. 반면에 Ni 입자를 함유한 ACA를 사용하여 플립칩 본딩한 시편에서는 전기적 open이 발생하였는데, 이는 ACA내 Ni 입자의 함유량이 부족하여 entrap된 Ni 입자가 하나도 없는 플립칩 접속부가 발생하였기 때문이다.

• Current Photovoltaic Research
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• 제1권2호
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• pp.82-89
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• 2013

$Cu_2ZnSnS_4$ thin film have been fabricated by rapid thermal annealing of dc-sputtered metal precursor with Cu/ZnSn/Cu stack in sulfur ambient. A CZTS film with a good uniformity was formed at $560^{\circ}C$ in 6 min. $Cu_2SnS_3$ and $Cu_3SnS_4$ secondary phases were present at $540^{\circ}C$ and a trace amount of $Cu_2SnS_3$ secondary phase was present at $560^{\circ}C$. Single-phase large-grained CZTS film with rough surface was formed at $560^{\circ}C$. Solar cell with best efficiency of 4.7% ($V_{oc}=632mV$, $j_{sc}=15.8mA/cm^2$, FF = 47.13%) for an area of $0.44cm^2$ was obtained for the CZTS absorber grown at $560^{\circ}C$ for 6 min. The existence of second phase at lower-temperature annealing and rough surface at higher-temperature annealing caused the degradation of cell performance. Also poor back contact by void formation deteriorated cell performance. The fill factor was below 0.5; it should be increased by minimizing voids at the CZTS/Mo interface. Our results suggest that CZTS absorbers can be grown by rapid thermal annealing of metallic precursors in sulfur ambient for short process times ranging in minutes.

• 한국환경과학회지
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• 제8권4호
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• pp.497-502
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• 1999

Removal of Pb(Ⅱ), Cu(Ⅱ), Cr(Ⅲ), and Zn(Ⅱ) ions from aqueous solutions using the adsorption process on domestic loess minerals has been investigated. Variations of contact time, pH, adsorption isotherms and selectivity of coexisting ions and leachate were experimental parameters. YDI, YPT and KRT samples diluted in 1% aquous solution which was adjusted pH 10.8, 8.0 and 6.50, respectively. The result of XRD measurement, Quartz was mainly observed in all samples. In the case of KRT sample, Kaolinite, Feldspar, Chlorite consisting of clay minerals shows almost same pattern with YPT samples. Different properties showed from the YDI sample containing Iillite, remarkably. For all the metals, maximum adsorption was observed at 30min∼60min. Adsorption of metal ions on loess minerals were reached an equilibrium by shaking the solution for about 30min. Removal efficiency of Pb(Ⅱ) ion for KRT, YPT and YDI were 84.7%, 92% and 100%, respectively. The Cu(Ⅱ) and Zn(Ⅱ) adsorptivity on KRT showed the low in various pH solution However, those on YPT and YDI were high than 90% except for the pH 2 solution. The orders of adsorptivities for domestic loess minerals showed as following : YPT>KRT>YDI. The adsorption isotherms of Cu(Ⅱ) and Zn(Ⅱ) ions on clay minerals were fitted to a Freundlich's. Freundlich constants(1/n) of KRT and YPT domestic loess minerals were 0.63, 0.97 and 0.36, 0.25, respectively.