• 대한금속재료학회지
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• 제46권9호
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• pp.585-592
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• 2008

Flip-chip bonding using Cu-Sn mushroom bumps composed of Cu pillar and Sn cap was accomplished, and the contact resistance and the thermal cycling reliability of the Cu-Sn mushroom bump joints were compared with those of the Sn planar bump joints. With flip-chip process at a same bonding stress, both the Cu-Sn mushroom bump joints and the Sn planar bump joints exhibited an almost identical average contact resistance. With increasing a bonding stress from 32 MPa to 44MPa, the average contact resistances of the Cu-Sn mushroom bump joints and the Sn planar bump joints became reduced from $30m{\Omega}/bump$ to $25m{\Omega}/bump$ due to heavier plastic deformation of the bumps. The Cu-Sn mushroom bump joints exhibited a superior thermal cycling reliability to that of the Sn planar bump joints at a bonding stress of 32 MPa. While the contact resistance characteristics of the Cu-Sn mushroom bump joints were not deteriorated even after 1000 thermal cycles ranging between $-40^{\circ}C$ and $80^{\circ}C$, the contact resistance of the Sn planar bump joints substantially increased with thermal cycling.

• 한국재료학회지
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• 제20권6호
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• pp.338-343
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• 2010

As an alternative to the W plug used in MOSFETs, a Cu plug with a NiSi contact using Ta / TaN as a diffusion barrier is currently being considered. Conventionally, Ni was first deposited and then NiSi was formed, followed by the barrier and Cu deposition. In this study, Ti was employed as a barrier material and simultaneous formation of the NiSi contact and Cu plug / Ti barrier was attempted. Cu(100 nm) / Ti / Ni(20 nm) with varying Ti thicknesses were deposited on a Si substrate and annealed at $4000^{\circ}C$ for 30 min. For comparison, Cu/Ti/NiSi thin films were also formed by the conventional method. Optical Microscopy (OM), Scanning Probe Microscopy (SPM), X-Ray Diffractometry (XRD), and Auger Electron Microscopy (AES) analysis were performed to characterize the inter-diffusion properties. For a Ti interlayer thicker than 50 nm, the NiSi formation was incomplete, although Cu diffusion was inhibited by the Ti barrier. For a Ti thickness of 20 nm and less, an almost stoichiometric NiSi contact along with the Cu plug and Ti barrier layers was formed. The results were comparable to that formed by the conventional method and showed that this alternative process has potential as a formation process for the Cu plug/Ti barrier/NiSi contact system.

• 한국전기전자재료학회논문지
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• 제17권12호
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• pp.1352-1355
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• 2004

We have applied front contact metallization of plated nickel and copper for high efficiency passivated emitter rear contact(PERC) solar cell. Ni is shown to be a suitable barrier to Cu diffusion as well as desirable contact metal to silicon. The plating technique is a preferred method for commercial solar cell fabrication because it is a room temperature process with high growth rates and good morphology. In this system, the electroless plated Ni is utilized as the contact to silicon and the plated Cu serves as the primary conductor layer instead of traditional solution that are based on Ti/Pd/Ag contact system. Experimental results are shown for over 20 % PERC cells with the Plated Ni/Cu contact system for good performance at low cost.

• 한국산학기술학회:학술대회논문집
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• 한국산학기술학회 2011년도 춘계학술논문집 2부
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• pp.683-686
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• 2011

The effect of welding material such as welding wires and materials for contact tip on the contact tip wear was investigated. Two types welding wires such as solid and flux cored wire and a variety of contact tips made of Cu-P, Cu-Cr(0.25%), Cu-Cr(1%) and Cu-Cr-Zr were employed for the comparison of wear resistance. It was found that the wear resistance of contact tips materials was Cu-Cr-Zr, Cu-Cr(1%), Cu-Cr(0.25%), Cu-P in order while the solid wire had a better wear resistance than flux cored wire.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.1065-1068
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• 2001

Effects of compacting pressure on the electrical and sintering characteristics of Cu25Cr contact material have been investigated. Cu25Cr contact materials were prepared by solid and liquid-phase sintering methods varying compacting pressure. Influence of compacting pressure on electrical characteristics were investigated in the cylindrical stainless-steel vessel using L-C resonant circuit. The physical and electrical properties of solid-phase sintered Cu25Cr material were found to be improved by increased compacting pressure. On the other hand, it was found that compacting pressure had little influence in case of liquid-phase sintered Cu25Cr material. After conditioning, contact resistance of Cu25Cr material was decreased regardless of compacting pressure. With increased compacting pressure, interrupting ability was shown to be increased.

• 한국분말재료학회지
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• 제1권2호
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• pp.174-180
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• 1994

Electrical contact property of the W-20wt%Cu contact materials manufactured by liquid phase sintering of nanocomposite W-Cu powders was investigated and discussed in terms of microstructural development during performance test. Nanocomposite powders were prepared by hydrogen reduction of ball milled W-Cu oxide mixture. They underwent complete densification and microstructural homogenization during liquid phase sintering. As a consequence, the W-Cu contacts produced from nanocomposite powders showed superior contact property of lower arc erosion and stable contact resistance. This might be mostly due to the fact that the arc erosion by evaporation of Cu liquid droplets and surface cracking remarkably became weakened. It is concluded that the improvement of anti-arc erosion of the composite specimen is basically attributed to microstructural homogeneity.

• 한국산학기술학회논문지
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• 제18권6호
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• pp.464-469
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• 2017

유도전동기 회전자는 rotor core를 일정한 높이로 쌓은 후 rotor core slot에 Cu bar를 열박음(shrinkage fit)작업으로 고정한 후 Cu bar 표면을 punch로 길이방향, 원주방향으로 순차적으로 압입(swaging)하여 제작된다. 본 연구에서는 Cu bar 표면을 압입할 때 Cu bar 표면에 발생하는 압입깊이, 잔류응력 분포 그리고 rotor core slot과 Cu bar 접촉면에 작용하는 접촉력(contact force)을 평가하고자 하였다. 한편 실제의 압입작업은 복잡한 3차원 문제이나 수치해석적인 접근을 위하여 단순화된 2차원 cyclic symmetry 해석모델을 개발하였으며 이러한 해석모델을 사용하여 일정한 압입압력에서 4가지 종류의 Cu bar 형상에 대하여 압입량과 접촉력을 평가하였다. 탄소성 수치해석 결과 1) sample Cu bar block model을 사용하여 단순화된 2차원 수치해석 모델을 개발하였고 2) rotor core 압입작업시 일정한 압입압력에서 Cu bar 표면의 압입량은 Cu bar 형상에 크게 관계없이 거의 일정하며 3) 압입작업시 punch에 가해지는 압입압력으로부터 rotor core slot과 Cu bar 접촉면에 작용하는 총 접촉력을 추정할 수 있는 근사식을 제안하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.434-435
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• 2009

The crystalline silicon solar cell where the solar cell market grows rapidly is occupying of about 85% or more. high-efficiency and low cost endeavors many crystalline silicon solar cells. the fabrication processes of high-efficiency crystalline silicon solar cells necessitate complicated fabrication processes and Ti/Pd/Ag contact, however, this contact formation processed by expensive materials. Ni/Cu contact formation is good alternative. in this paper, according to temperature Ni silicide makes, produced Ni/Cu contact solar cell and measured conversion efficiency.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2009년도 춘계학술발표대회 논문집
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• pp.235-240
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• 2009

Crystlline silicon solar cells markets are increasing at rapid pace. now, crystlline silicon solar cells markets screen-printing solar cell is occupying. screen-printing solar cells manufacturing process are very quick, there is a strong point which is a low cost. but silicon and metal contact, uses Ag & Al pates. because of, high contact resistance, high series resistance and sintering inside process the electric conductivity decreases with 1/3. and In pastes ingredients uses Ag where $80{\sim}90%$ is metal of high cost. because of low cost solar cells descriptions is difficult. therefore BCSC(Buried Contact Solar Cell) is developed. and uses light-induced plating, ln-line galvanization developed equipments. Ni/Cu matel contact solar cells researches. in Germany Fraunhofer ISE. In order to manufacture high-efficiency solar cells, metal selections are important. metal materials get in metal resistance does small, to be electric conductivity does highly. efficiency must raise an increase with rise of the curve factor where the contact resistance of the silicon substrate and is caused by few with decrement of series resistance. Ni metal materials the price is cheap, Ti comes similar resistance. Cu and Ag has the electric conductivity which is similar. and Cu price is cheap. In this paper, Ni/Cu/Ag metal contact cell with screen printing manufactured, silicon metal contact comparison and analysis.

• 한국재료학회지
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• 제12권12호
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• pp.918-923
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• 2002

In this work, CdTe films were deposited on CdS/ITO/glass substrate by a close spaced sublimation (CSS) method. A $Cu_2$Te layer was deposited on the CdTe film by evaporating $Cu_2$Te powder. Then the samples were annealed for p+ ohmic contact. TEM and XRD analysis showed that $CdTe/Cu_2$Te interface exhibited different forms with various annealing temperature. A good p+ ohmic contact was achieved when the annealing temperature was between $180^{\circ}C$ to $200^{\circ}C$. Best cell efficiency of 12.34% was obtained when post annealing temperature was $200^{\circ}C$ for 5 min. Thermal stress test of the CdS/CdTe cells with carbon back contact showed that the $Cu_2$Te contact was stable at $50^{\circ}C$ in $N_2$ and was slowly degraded at $100^{\circ}C$ in $N_2$. In comparison to the conventional carbon contact, the $Cu_2$Te contact showed a better thermal stability.