• Journal of the Korean Institute of Gas
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• v.5 no.4 s.16
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• pp.33-39
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• 2001

This paper was studied on corrosion behavior of absorption refrigeration systems using $LiBr-H_2O$ working fluids. In the various concentration of lithium bromide solution, polarization test of SS 400, Cu(C1220T-OL) and Al-Ni bronze is carried out. And the corrosion behavior of materials forming absorption refrigeration systems is investigated. The main results are as following: 1) As concentration of lithium bromide solution increases, polarization resistance of materials of each kinds is low. And open circuit potential becomes less noble, the corrosion current density is high drained 2) Open circuit potential of SS 400 is less noble than that of Cu and Al-Ni bronze, corrosion current density of SS5 400 is high drained than that of Cu and Al-Ni bronze. 3) Anodic polarization of Cu and Al-Ni bronze in $62\%$ LiBr solution continues the active state. that of Cu and Al-Ni bronze in the natural sea water maintains the active state and the critical current for passivation appears.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.15-19
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• 2015

We demonstrated an inspection system for detecting discoloration of PCB Cu ball pad with an OSP surface finish. Though the OSP surface finish has many advantages such as eco-friendly and low cost, however, it often shows a discoloration phenomenon due to a heating process. In this study, the discoloration was analyzed with device-independent CIELAB color space. First of all, the PCB samples were inspected with standard lamps and CCD camera. The measured data was processed with Labview program for detecting discoloration of Cu ball pad. From the original PCB sample image, the localized Cu ball pad image was selected to reduce the image size by the binarization and edge detection processes and it was also converted to device-independent CIELAB color space using $3{\times}3$ conversion matrix. Both acquisition time and false acceptance rate were significantly reduced with this proposed inspection system. In addition, $L^*$ and $b^*$ values of CIELAB color space were suitable for inspection of discoloration of Cu ball pad.

• Journal of Welding and Joining
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• v.30 no.3
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• pp.26-31
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• 2012

Three-dimensional integrated circuit (3D IC) technology has become increasingly important due to the demand for high system performance and functionality. We have evaluated the effect of Buffered oxide etch (BOE) on the interfacial bonding strength of Cu-Cu pattern direct bonding. X-ray photoelectron spectroscopy (XPS) analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE 2min. Two 8-inch Cu pattern wafers were bonded at $400^{\circ}C$ via the thermo-compression method. The interfacial adhesion energy of Cu-Cu bonding was quantitatively measured by the four-point bending method. After BOE 2min wet etching, the measured interfacial adhesion energies of pattern density for 0.06, 0.09, and 0.23 were $4.52J/m^2$, $5.06J/m^2$ and $3.42J/m^2$, respectively, which were lower than $5J/m^2$. Therefore, the effective removal of Cu surface oxide is critical to have reliable bonding quality of Cu pattern direct bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.370-373
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• 2003

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical Planarization(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper depostion is a mature process from a historical point of view, but a very young process from a CMP persperspective. While copper electrodepostion has been used and stuidied for dacades, its application to Cu damascene wafer processing is only now ganing complete accptance in the semiconductor industry. The polishing mechanism of Cu CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper pasivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.20-23
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing(CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. However, as the IMD layer gets thinner, micro-scratches are becoming as major defects. Chemical-Mechanical polishing(CMP) of conductors is a key process in Damascene patterning of advanced interconnect structure. The effect of alternative commercial slurries pads, and post-CMP cleaning alternatives are discuss, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. Electroplated copper deposition is a mature process from a historical point of view, but a very young process from a CMP perspective. While copper electro deposition has been used and studied for decades, its application to Cu damascene wafer processing is only now gaining complete acceptance in the semiconductor industry. The polishing mechanism of Cu-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. however it is important to understand the effect of oxidizer on copper passivation layer in order to obtain higher removal rate and non-uniformity during Cu-CMP process. In this paper, we investigated the effects of oxidizer on Cu-CMP process regarding the additional volume of oxidizer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.578-583
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• 2001

The bushing for high voltage and large and power should endure weight of itself and force of pushing from contact with circuit breaker. Like this, epoxy mold bushing has to be strong without fault. However, the external circumstances and internal factors was caused by partial discharge, flashover and dielectric breakdown. Therefore, to remove external factor of defect and to prevent the internal cracks and cavity generated from the contraction on interface of Cu-Epoxy, we should form semi-conductive layer on Cu bar by carbon. Then, the PD properties and the insulation qualities of epoxy mold type bushing was able to improved by roles of cushions for the direction of diameter and by effects fo natural sliding like as separated from conductor for the direction of length. So, in this work, we could prove the method of semi-conductive layer in making the long conductor.

• Journal of Advanced Marine Engineering and Technology
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• v.26 no.1
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• pp.125-131
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• 2002

This paper was studied on the effect of temperature on corrosion of absorption refrigeration systems using $LiBr-H_2O$ working fluids. In the fresh water and 62 % lithium bromide solution at $70^{\circ}C$, polarization test of SS 400, Cu(C1220T-OL) and Al-Ni bronze was carried out. And polarization behavior, polarization resistance characteristics, corrosion rate(mmpy) and corrosion sensitivity of materials forming absorption refrigeration systems was considered. The main results are as following: (1) As the experimental temperature increase, the change of corrosion rate of Al-Ni bronze become duller than SS 400 and Cu in 62% lithium bromide solution. (2) According as corrosion environment is changed from fresh water to 62% lithium bromide solution, potential change of Cu and Al-Ni bronze become less noble than SS 400. (3) The corrosion sensitivity of Al-Ni bronze was duller than that of Cu and SS 400 in 62% LiBr solution.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.59 no.7
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• pp.1259-1264
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• 2010

This paper was researched about effectiveness of the electrochemical cell which is composed of the sea water and the Cu/Zn electrode. The electric potential difference between copper and zinc finally reached 0.51 volts. Short current decreased with time. It might depend on the electromotive force decreasing. Confirmed the load resistance and electrode affect in electromotive force and electric current. The resistance which shows a maximum output power was 20[$\Omega$], and the maximum output power from this resistance was evaluated as 0.736mW. In order to calculate the energy which creates from electrochemical cell, charging voltage of the capacitor with various capacitance was investigated. It was found that energy harvesting possibility of the cell which is made of a sea water electrolyte and the copper/the zinc.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.10a
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• pp.160-163
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• 2002

Micro via hole Fabrication is studied by means of minimizing method to circuit size as many electric products developed to portable and minimize. Most of currently micro via hole fabrication using laser is that fabricate insulator layer using CO2 Laser after Cu layer by etching, or fabricate insulator layer using IR after trepanning Cu by UV. In this paper, it was performed that a metal layer and insulator layer were worked upon only one UV laser, and increase to processing speed by experiment.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.43-49
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• 2015

By the trends of electronic package to be smaller, thinner and more integrative, organic printed circuit board is required to be finer Cu trace pitch. This paper reports on a study of failure mechanism for PCB with fine Cu trace pitch using biased HAST. In weibull analysis of the biased HAST lifetime, it is found that the acceleration factor (AF) of between $135^{\circ}C/90%RH/3.3V$ and $130^{\circ}C/85%RH/3.3V$ is 2.079. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $Cu_xO/Cu(OH)_2$ colloids and Cu dendrites were formed at anode (+) and at cathode (-), respectively. Thus, this gives the evidence that Cu dendrites formed at cathode by $Cu^{2+}$ ion migration lead to a short failure between a pair of Cu nets.