• Polymer(Korea)
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• v.25 no.2
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• pp.302-310
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• 2001

Cu/PET film composites were prepared by electroless copper plating method. In order to improve adhesion between electroless Cu plated layer and polyester (PET) film, the effect of pretreatment conditions such as etching method and mixed catalyst composition, and accelerator was investigated. Compared to NaOH etching medium, PET film was more finely etched by HCl solution, resulting in an improvement in adhesion between Cu layer and PET film. However, there were no significant differences in electromagnetic interference shielding effectiveness as a function of etching medium. The surface morphology of Cu plated PET film revealed that Pd/Sn colloidal particles became more evenly distributed in the smaller size by increasing the molar ratio of PdCl$_2$ : SnCl$_2$ from 1 : 4 to 1 : 16. With increasing the molar ratio of mixed catalyst, the adhesion and the shielding effectiveness of Cu plated PET film were increased. Furthermore, HCl was turned out to be a better accelerator than NaOH in order to enhance the activity of the mixed PdCl$_2$/SnCl$_2$ catalyst, which facilitated the formation of more uniform copper deposit on the PET film.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.164-169
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• 2017

Ni-Cr-X ternary interlayers were investigated to improve the adhesion of Cu/Ni-Cr/Polyimide flexible copper clad laminates. The ternary compounds are sputtered Ni-Cr-X films (where X is one of Nb, V, Mo, or Ti), and the effect of third elements on the adhesion was evaluated and investigated chemically and mechanically. The feel strength was higher in the order of Ni-Cr-Nb > Ni-Cr-V > Ni-Cr > Ni-Cr-Mo > Ni-Cr-Ti. Nb, which has a comparable standard electrode potential to Cr, increased the adhesion, while Ti, with a low standard electrode potential, degraded the adhesion. The Ni-Cr-Nb interlayer was amorphous, while Ni-Cr-Ti was partially crystalline. The similar morphology structure of the Ni-Cr-Nb interlayer with polyimide resulted in a better adhesion.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.245-245
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• 2009

l-D nanostructured materials have much more attention because of their outstanding properties and wide applicability in device fabrication. Copper oxide(CuO) has been realized as a p-type metal oxide semiconductor with narrow band gap of 1.2 -1.5eV. Copper oxide nanostructures can be synthesized by various growth method such as oxidation reaction, thermal evaporation thermal decomposition, sol-gel. and Mostly CuO nanowire prepared on the Cu substrate such as Copper foil, grid, plate. In this study, CuO NWs were grown by thermal oxidation (at various temperatures in air (1 atm)) of Cu metal deposited on CuO (20nm)/$SiO_2$(250nm)/Si. A 20nm-thick CuO layer was used as an adhesion layer between Cu metal and $SiO_2$

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.723-732
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• 1996

Cu films were deposited by chemical wapor deposition on the as-received substrates (TiN/Si) and three kinds of Cu-seeded substrates (Cu/TiN/Si) which had seeding layer in the thick ness of 5 ${\AA}$ and 130 ${\AA}$ coated by ICB(Ionized Cluster Beam) method. The effect of Cu seeding layers on the growth rate, crystallinity, grain size uniformity and film adhesion strength of final CVD-Cu films was investigated by scanning eletron microscopy(SEM), X-ray diffractometry and scratch test. The growth rate was found to incresase somewhat in the case of ICB-seeding. The XRD patterns of the Cu films on the as-received substrate and ICB Cu-seeded substrates exhibited the diffraction peaks corresponding to FCC phase, but the peak intensity ratio($I_{111}/I_{200}$) of Cu films deposited on the ICB Cu-seeded substrates increased compared with that of Cu films on the as-received substrate. The resistivity of final Cu film on 40 ${\AA}$ seeded substrate was observed as the lowest value, 2.42 $\mu\Omega\cdot$cm compared with other Cu films. In adhesion test, as the seeding thickness increased from zero to 130 ${\AA}$, the adhesion strength increased from 21N to 27N.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.4
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• pp.61-66
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• 2010

Cu-Cu thermo-compression bonding process was successfully developed as functions of the deposited Cu thickness and $Ar+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the interfacial toughness was measured by 4-point bending test. Pre-annealing with $Ar+H_2$ gas at $300^{\circ}C$ is effective to achieve enough interfacial adhesion energy irrespective of Cu film thickness. Successful Cu-Cu bonding process achieved in this study results in delamination at $Ta/SiO_2$ interface rather than Cu/Cu interface.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.84-87
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• 2003

Since Pb-free solder alloys have been used extensively in microelectronic packaging industry, the interaction between UBM (Under Bump Metallurgy) and solder is a critical issue because IMC (Intermetallic Compound) at the interface is critical for the adhesion of mechanical and the electrical contact for flip chip bonding. IMC growth must be fast during the reflow process to form stable IMC. Too fast IMC growth, however, is undesirable because it causes the dewetting of UBM and the unstable mechanical stability of thick IMC. UP to now. Ni and Cu are the most popular UBMs because electroplating is lower cost process than thin film deposition in vacuum for Al/Ni(V)/Cu or phased Cr-Cu. The consumption rate and the growth rate of IMC on Ni are lower than those of Cu. In contrast, the wetting of solder bumps on Cu is better than Ni. In addition, the residual stress of Cu is lower than that of Ni. Therefore, the alloy of Cu and Ni could be used as optimum UBM with both advantages of Ni and Cu. In this paper, the interfacial reactions of Sn-3.5Ag-0.7Cu solder on Ni-xCu alloy UBMs were investigated. The UBMs of Ni-Cu alloy were made on Si wafer. Thin Cr film and Cu film were used as adhesion layer and electroplating seed layer, respectively. And then, the solderable layer, Ni-Cu alloy, was deposited on the seed layer by electroplating. The UBM consumption rate and intermetallic growth on Ni-Cu alloy were studied as a function of time and Cu contents. And the IMCs between solder and UBM were analyzed with SEM, EDS, and TEM.

• Journal of Adhesion and Interface
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• v.7 no.3
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• pp.10-15
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• 2006

After anchoring 3-(2-aminoethylamino)propyltriethoxysilane (APTES) onto the surfaces of the channels within ordered mesoporous silica, SBA-15, we dispersed $Cu^{2+}$-perfluorophthalocyanine into the modified SBA-15 channels. From small-angle X-ray scattering (SAXS) patterns and transmission electron microscopy (TEM) images, we confirmed that both the calcined and $Cu^{2+}$-perfluorophthalocyanine-incorporated SBA-15 samples possessed ordered periodic structures and hexagonal symmetry lattices (p6mm). The value of the $d_{100}$ spacing was decreased after the incorporation of $Cu^{2+}$-perfluorophthalocyanine into the modified SBA-15 channels. We used FTIR and UV-Vis spectroscopy and thermogravimetric analysis (TGA) to characterize both the modified SBA-15 and the $Cu^{2+}$-perfluorophthalocyanine-incorporated SBA-15 samples. From scanning electron microscopy (SEM) images and $N_2$ sorption measurements, we found that the $Cu^{2+}$-perfluorophthalocyanine units were incorporated within the modified SBA-15 channels, rather than on the external surfaces of the modified SBA-15 channels.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.3
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• pp.31-37
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• 2009

Cu-Cu thermo-compression bonding process was successfully developed as functions of the $N_2+H_2$ forming gas annealing conditions before and after bonding step in order to find the low temperature bonding conditions of 3-D integrated technology where the quantitative interfacial adhesion energy was measured by 4-point bending test. While the pre-annealing with $N_2+H_2$ gas below $200^{\circ}C$ is not effective to improve the interfacial adhesion energy at bonding temperature of $300^{\circ}C$, the interfacial adhesion energy increased over 3 times due to post-annealing over $250^{\circ}C$ after bonding at $300^{\circ}C$, which is ascribed to the effective removal of native surface oxide after post-annealing treatment.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.110-110
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• 1999

• Proceedings of the Materials Research Society of Korea Conference
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• 1996.05a
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• pp.24-24
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• 1996