• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.160-165
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• 2006

A Pd-Cu-Ni alloyed hydrogen membrane has fabricated on porous nickel support formed by nickel powder. Porous nickel support made by sintering shows a strong resistance to hydrogen embrittlement and thermal fatigue. Plasma surface modification treatment is introduced as pre-treatment process instead of conventional HCl wet activation. Nickel was electroplated to a thickness of $2{\mu}m$ in order in to fill micropores at the nickel support surface. Palladium and copper were deposited at thicknesses of $4{\mu}m$ and $0.5{\mu}m$, respectively, on the nickel coated support by DC sputtering process. Subsequently, copper reflow at $700^{\circ}C$ was performed for an hour in $H_2$ ambient. And, as a result PdCu-Ni composite membrane has a pinhole-free and extremely dense microstructure, having a good adhesion to the porous nickel support and infinite hydrogen selectivity in $H_2/N_2$ mixtures.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.3
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• pp.49-54
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• 2020

To attach a stretchable/flexible electrode to something or something to on electrode, conductive adhesives must be stretchable/flexible to suit the properties of the electrode. In particular, conductive adhesive require durability and heat resistance, and unlike conventional adhesives, they should also have conductivity. To this end, Epoxy, which has good strength and adhesion, was selected as an adhesive, and a plasticizer and a reinforcement were mixed instead of a two-liquid material consisting of a conventional theme and a hardener, and a four-liquid material was used to give stretchability/flexibility to high molecules. The conductive filler was selected as silver, a material with low resistance, and for high conductivity, three shapes of Ag particles were used to increase packing density. Conductivity was compared with these developed conductive adhesives and two epoxy-based conductive adhesives being sold in practice, and about 10 times better conductivity results were obtained than products being actually sold. In addition, conductivity, mechanical properties, adhesion and strength were evaluated according to the presence of plasticizers and reinforcement agent. There was also no problem with 60% tensile after 5 minutes of curing at 120℃, and pencil hardness was excellently measured at 6H. As a result of checking the adhesion of electrodes through 3M tape test, all of them showed excellent results regardless of the mixing ratio of binders. After attaching the Cu sheet on top of the electrode through conductive adhesive, the contact resistance was checked and showed excellent performance with 0.3 Ω.

• Journal of the Korean Magnetics Society
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• v.15 no.4
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• pp.226-230
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• 2005

In this research, magnetic properties and annealing effects of the spin valve structures were investigated, which have Ta underlayer deposited with Ar and $N_2$ gas mixture. Also, TaN underlayer as a diffusion barrier and the substrate were investigated. The structure of the spin valve was Si($SiO_2$)/Ta(TaN)/NiFe/CoFe/Cu/CoFe/FeMn/Ta. Deposition rate was decreased and resistivity and roughness of the TaN films were increased as the $N_2$ gas flow was increased. The XRD results after high temperature annealing showed that Silicides were created in Si/Ta layer, but not in Si/TaN layer. Magnetoresistance ratio (MR) and exchange coupling field ($H_{ex}$) were decreased when the $N_2$ gas flow was increased over 4.0 sccm. The MR of the spin valves with Ta and TaN films deposited with up to 4.0 sccm of $N_2$ gas flow was increased about $0.5\%$ until the annealing temperature of up to $200^{\circ}C$ and then, decreased. TaN film deposited with 8.0 sccm of $N_2$ gas flow showed twice the adhesion of the Ta film. The above results indicate that with 3.0 sccm of $N_2$ gas flow during the Ta underlayer deposition, the magnetic properties of the spin valves are maintained, while the underlayer may be used as a diffusion barrier and the adhesion between the Si substrate and the underlayer is increased.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.530-538
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• 2016

There is a close relationship between the performance and the heat generation of the electronic device. Heat generation causes a significant degradation of the durability and/or efficiency of the device. It is necessary to have an effective method to release the generated heat. Based on demands of the printed circuit board (PCB) manufacturing, it is necessary to develop a robust and reliable plating technique for substrates with high thermal conductivity, such as alumina ($Al_2O_3$), aluminium nitride (AlN), and silicon nitride ($Si_3N_4$). In this study, the plating of metal layers on an insulating silicon nitride ($Si_3N_4$) ceramic substrate was developed. We formed a Pd-$TiO_2$ adhesion layer and used APTES(3-Aminopropyltriethoxysilane) to form OH groups on the surface and adhere the metal layer on the insulating $Si_3N_4$ substrate. We used an electroless Ni plating without sensitization/activation process, as Pd particles were nucleated on the $TiO_2$ layer. The electrical resistivity of Ni and Cu layers is $7.27{\times}10^{-5}$ and $1.32{\times}10^{-6}ohm-cm$ by 4 point prober, respectively. The adhesion strength is 2.506 N by scratch test.

• Polymer(Korea)
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• v.30 no.6
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• pp.519-524
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• 2006

Poly(4-vinyl pyridine) (PVP) and its copolymers, poly(4-vinyl pvridine- co-acrylamide) and poly(4-vinyl pyridine-co-allylamine), were synthesized and evaluated for application to organic solder-ability preservatives (OSP). The copolymers were synthesized by radical polymerization of vinyl pyridine in the presence of acrylamide or allylamine as a comonomer. Various kinds of polymers with different chemical composition were synthesized by varying the feed ratio of monomers and their low $M_w$ polymers can be obtained by adding 2-mercaptoethanol as a chain transfer agent during poly-merization. All the polymers showed good adhesion properties on Cu pad when they were spin-coated. Especially, allylamine -containing copolymers showed both good adhesion and solubility properties. Also, they exhibited better thermal stability than PVP homopolymer and such thermal properties were changed depending on the chemical composition and their $M_w$, which were evidenced by the measurement of oxygen induced temperature (OIT). From the OIT measurement, poly(4-vinyl pyridine- co-allylamine) was thermally stable up to $230^{\circ}C$ for 70 min in the 100% oxygen environment. As a result, allylamine-containing copolymers can be considered as a promising OSP coating material that has excellent thermal and adhesive properties applicable to the present microelectronic package processes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.377-377
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• 2012

Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, Atomic layer deposition (ALD) $TaN_x$ is used as a diffusion barrier to prevent copper diffusion into the Si or $SiO_2$. Another problem with copper is that it has weak adhesion to most materials. Strong adhesion to copper is an essential characteristic for the new barrier layer because copper films prepared by electroplating peel off easily in the damascene process. Thus adhesion-enhancing layer of cobalt is placed between the $TaN_x$ and the copper. Because, cobalt has strong adhesion to the copper layer and possible seedless electro-plating of copper. Until now, metal film has generally been deposited by physical vapor deposition. However, one draw-back of this method is poor step coverage in applications of ultralarge-scale integration metallization technology. Metal organic chemical vapor deposition (MOCVD) is a good approach to address this problem. In addition, the MOCVD method has several advantages, such as conformal coverage, uniform deposition over large substrate areas and less substrate damage. For this reasons, cobalt films have been studied using MOCVD and various metal-organic precursors. In this study, we used $C_{12}H_{10}O_6(Co)_2$ (dicobalt hexacarbonyl tert-butylacetylene, CCTBA) as a cobalt precursor because of its high vapor pressure and volatility, a liquid state and its excellent thermal stability under normal conditions. Furthermore, the cobalt film was also deposited at various $H_2/NH_3$ gas ratio(1, 1:1,2,6,8) producing pure cobalt thin films with excellent conformality. Compared to MOCVD cobalt using $H_2$ gas as a reactant, the cobalt thin film deposited by MOCVD using $H_2$ with $NH_3$ showed a low roughness, a low resistivity, and a low carbon impurity. It was found that Co/$TaN_x$ film can achieve a low resistivity of $90{\mu}{\Omega}-cm$, a low root-mean-square roughness of 0.97 nm at a growth temperature of $150^{\circ}C$ and a low carbon impurity of 4~6% carbon concentration.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1459-1461
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• 2005

Carbon nanotube -copper composite structures were fabricated using composite plating method and their field emission characteristics were investigated. Multi-walled carbon nanotubes synthesized by chemical vapor deposition were used in the present study. It was revealed that turn-on field of the structures was about 3.0 $V/{\mu}m$ at the current density of 0.1 ${\mu}A/cm^2$. We observed relatively uniform emission characteristics as well as stable emission currents. CNT-Cu composite plating method is efficient and it has no intrinsic limit on the plating area. Moreover, it gives strong adhesion between emitters and an electrode. The refore, we expect that CNT-Cu composite plating method can be applied to fabricate electron field emitters for large area FEDs and large area vacuum lighting sources.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.61-67
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• 2009

Electrolessly deposited Co (Re,P) was investigated as a possible capping layer for Cu wires. 50 nm Co (Re,P) films were deposited on Cu/Ti-coated silicon wafers which acted as a catalytic seed and an adhesion layer, respectively. To obtain the optimized bath composition, electroless deposition was studied through an electrochemical approach via a linear sweep voltammetry analysis. The results of using this method showed that the best deposition conditions were a $CoSO_4$ concentration of 0.082 mol/l, a solution pH of 9, a $KReO_4$ concentration of 0.0003 mol/l and sodium hypophosphite concentration of 0.1 mol/L at $80^{\circ}C$. The thermal stability of the Co (Re,P) layer as a barrier preventing Cu was evaluated using Auger electron spectroscopy and a Scanning calorimeter. The measurement results showed that Re impurities stabilized the h.c.p. phase up to $550^{\circ}C$ and that the Co (Re,P) film efficiently blocked Cu diffusion under an annealing temperature of $400^{\circ}C$ for 1hr. The good barrier properties that were observed can be explained by the nano-sized grains along with the blocking effect of the impurities at the fast diffusion path of the grain boundaries. The transformation temperature from the amorphous to crystal structure is increased by doping the Re.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.101-105
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• 1990

The use of a sol-gel processed cordierite precursor sinterable about$900^{\circ}C$ allows cosintering of the copper and the ceramic. A strong bonding between the copper film and the cordierite substrate can be achieved through an eutectic bonding technique. These interfaces were investigated using STEM. copper diffusion as well as strong chemical and structural modifications was observed in the interface region. Although these interfaces have good adhesion properties, there was no evidence of the formation of the copper compound at the interface.