• 한국표면공학회지
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• 제26권2호
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• pp.71-81
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• 1993

Thed effects of Ar or Oxygen RF plasma treatment on the adhesion behavior of Cr films to polyimide sub-strates have been investigated by using SEM, XRD, AES, and $90^{\circ}$peel test. By applying RF plasma treatment of the polyimide surface prior to metal deposition, the peel adhesion strength of Cu/Cr films sputtered onto the fully cured BPDA-PDA polyimide was highly increased from about 3g/mm to 90 ~ 100g/mm. Improved peel adhesion strength of Cr/polyimide interfaces due to RF plasma treatment was attributed to the contributions from surface cleaning, Cr-polyimide bonding at the interface, and force required for plastic deformation of the film. While the surface topology change of the polyimide caused by RF plasma treatment makes a little contri-bution to the improved adhesion.

• 대한용접접합학회:학술대회논문집
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• 대한용접접합학회 2009년 추계학술발표대회
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• pp.66-66
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• 2009

Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites(diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature 940 $^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

• Journal of Welding and Joining
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• 제28권3호
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• pp.49-58
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• 2010

Various alloy system, such as Cu-Sn-Ti, Cu-Ag-Ti, and Ni-B-Cr-based alloy are used for the brazing of diamond grits. However, the problem of the adhesion strength between the diamond grits and the brazed alloy is presented. The adhesion strength between the diamond grits and the melting filler alloy is predicted by the contact angle, thereby, instead of diamond grit, the study on the wettability between the graphite and the brazing alloy has been indirectly executed. In this study, Cu-13Sn-12Ti filler alloy was manufactured, and the contact angles, the shear strengths and the interfacial area between the graphites (diamond grits) and braze matrix were investigated. The contact angle was decreased on increasing holding time and temperature. The results of shear strength of the graphite joints brazed filler alloys were observed that the joints applied Cu-13Sn-12Ti alloy at brazing temperature $940^{\circ}C$ was very sound condition indicating the shear tensile value of 23.8 MPa because of existing the widest carbide(TiC) reaction layers. The micrograph of wettability of the diamond grit brazed filler alloys were observed that the brazement applied Cu-13Sn-12Ti alloy at brazing temperature $990^{\circ}C$ was very sound condition because of existing a few TiC grains in the vicinity of the TiC layers.

• Journal of Periodontal and Implant Science
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• 제52권1호
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• pp.54-64
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• 2022

Purpose: This in vitro study was conducted to evaluate the effects of different debridement techniques and conditioning procedures on root surface morphology and blood clot stabilization. Methods: Two debridement techniques (curette [CU] vs. high-speed ultrasound [US]) and 2 conditioning procedures (ethylenediaminetetraacetic acid [EDTA] and phosphoric acid [PA]) were used for the study. Seven experimental groups were tested on root surfaces: 1) no treatment (C); 2) CU; 3) US; 4) CU+EDTA; 5) US+EDTA; 6) CU+PA; and 7) US+PA. Three specimens per group were observed under scanning electron microscopy (SEM) for surface characterization. Additional root slices received a blood drop, and clot formation was graded according to the blood element adhesion index by a single operator. Data were statistically analyzed, using a threshold of P<0.05 for statistical significance. Results: The C group displayed the most irregular surface among the tested groups with the complete absence of blood traces. The highest frequency of blood component adhesion was shown in the CU+EDTA group (P<0.05), while no differences were detected between the CU, US+EDTA, and CU+PA groups (P<0.05), which performed better than the US and US+PA groups (P<0.05). Conclusions: In this SEM analysis, EDTA and conventional manual scaling were the most efficient procedures for enhancing smear layer removal, collagen fiber exposure, and clot stabilization on the root surface. This technique is imperative in periodontal healing and regenerative procedures.

• 접착 및 계면
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• 제20권1호
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• pp.23-28
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• 2019

본 연구에서는 마이크로 또는 나노 입자 형상을 폴리디메틸실록산 (PDMS)에 전사시켜 건식접착제를 제조하고 특성에 대하여 고찰하였다. 20 nm, 40 nm, 70 nm의 직경을 가지는 구리 나노 입자형상과 $5{\mu}m$의 직경을 가지는 폴리메틸메타아크릴레이트 (PMMA) 마이크로 입자 형상을 전사시켜 PDMS 건식 접착제를 제조하였다. 입자의 종류 및 크기가 변화함에 따라 건식 접착제의 기계적 특성, 인장 접착강도, 표면 형상, 접촉각, 광학적 성질에 미치는 영향을 조사하였다. 20 nm 직경을 가지는 구리 나노 입자를 전사시켜 얻은 건식 접착제는 bare PDMS 필름에 비하여 300% 이상 향상된 인장 접착강도를 가졌다. 나노 입자를 전사시켜 얻은 큰 표면적 건식 접착제 구조가 높은 인장 접착강도를 부여하는 원인으로 추정된다. 본 연구결과는 나노 입자를 전사시키는 방법이 PDMS 건식 접착제의 제조에 있어 쉽고 효과적임을 시사한다.

• 한국진공학회지
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• 제6권4호
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• pp.314-320
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• 1997

XPS를 이용하여 공기 중에 노출된 TiN박막과 상온 증착된 Cu사이의 계면에서의 화학적 반응과 전자 구조적인 변화를 조사하였다. Ti(2p), O(1s), N(1s), Cu(2p) core-level과 Cu LMM Auger line의 spectrum을 보면, Cu의 증착두께가 증가하여도 peak의 위치 뿐만 아니라 line shape이 전혀 변화하지 않는다. 그리고 XPS에 의한 valence bands를 보아도 전 혀 변화가 없다. 이것은 공기 중에 노출된 TiN박막과 Cu사이의 계면에서 Cu화합물의 어떠 한 형태도 존재하지 않을 뿐만 아니라 전자 구조적인 면에서도 전혀 변화가 없음을 의미한 다. 계면에서 Cu가 화학적 반응을 일으키지 않는 것은 계면접합력을 나쁘게 하는 요인이 된 다. 우리는 계면에서의 화학 반응 또는 전자구조의 변화에 대한 연구를 통하여 Cu와 TiN박 막의 계면접합력을 이해할 수 있었다.

• 마이크로전자및패키징학회지
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• 제7권4호
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• pp.23-29
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• 2000

사용되는 metal구분 없이 반도체 공정장비들을 사용함으로써 cross-contamination을 유발시킬 수 있다. 특히, copper(Cu)는 확산이 쉽게 되어 cross-contamination에 의해 수 ppm정도가 wafer에 오염되더라도 트랜지스터의 leakage current발생 요인으로 작용할 수 있기 때문에 Si-IC성능에 치명적인 영향을 미칠 수 있는데, Si-LSI 실험실에서 할 수 있는 공정과 Si-LSI 실험실을 나와 할 수 있는 공정으로 구분하여 최대한 Si-LSI 장비를 공유함으로써 최소한의 장비로 Cu cross-contamination문제를 해결할 수 있다. 즉, 전기도금을 할 때 전극으로 사용되어지는 TiW/Al sputtering, photoresist (PR) coating, solder bump형성을 위한 via형성까지는 Si-LSI 실험실에서 하고, 독립적인 다른 실험실에서 Cu-seed sputtering, solder 전기도금, 전극 etching, reflow공정을 하면 된다. 두꺼운 PR을 얻기 위하여 PR을 수회 도포(multiple coaling) 하고, 유기산 주석과 유기산 연의 비를 정확히 액 조성함으로서 Sn:Pb의 조성비가 6 : 4인 solder bump를 얻을 수 있었다. solder를 도금하기 전에 저속 도금으로 Cu를 도금하여, PR 표면의 Cu/Ti seed층을 via와 PR표면과의 저항 차를 이용하여 PR표면의 Cu-seed를 Cu도금 중에 etching 시킬 수 있다. 이러한 현상을 이용하여 선택적으로 via만 Cu를 도금하고 Ti층을 etching한 후, solder를 도금함으로써 저 비용으로 folder bump 높이가 60 $\mu\textrm{m}$ 이상 높고, 고 균일/고 밀도의 solder bump를 형성시킬 수 있었다.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2002년도 추계기술심포지움논문집
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• pp.49-53
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• 2002

The Sn-Cu eutectic solder bump formation ($140{\mu}{\textrm}{m}$ diameter, $250{\mu}{\textrm}{m}$ pitch) by electroplating was studied for flip chip package fabrication. The effect of current density and plating time on Sn-Cu deposit was investigated. The morphology and composition of plated solder surface was examined by scanning electron microscopy. The plating thickness increased with increasing time. The plating rate increased generally according to current density. After the characteristics of Sn-Cu plating were investigated, Sn-Cu solder bumps were fabricated on optimal condition of 5A/dm$^2$, 2hrs. Ball shear test after reflow was performed to measure adhesion strength between solder bump and UBM (Under Bump Metallization). The shear strength of Sn-Cu bump after reflow was higher than that of before reflow.

• 한국전기전자재료학회논문지
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• 제11권12호
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• 한국표면공학회지
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• 제56권3호
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• pp.180-184
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• 2023

Scholars have proposed wafer-level bonding and three-dimensional (3D) stacked integrated circuit (IC) and have investigated Cu-Cu bonding to overcome the limitation of Moore's law. However, information about quantitative Cu-Cu direct-bonding conditions, such as temperature, pressure, and interfacial adhesion energy, is scant. This study determines the optimal temperature and pressure for Cu-Cu bonding by varying the bonding temperature to 100, 150, 200, 250, and 350 ℃ and pressure to 2,303 and 3,087 N/cm². Various conditions and methods for surface treatment were performed to prevent oxidation of the surface of the sample and remove organic compounds in Cu direct bonding as variables of temperature and pressure. EDX experiments were conducted to confirm chemical information on the bonding characteristics between the substrate and Cu to confirm the bonding mechanism between the substrate and Cu. In addition, after the combination with the change of temperature and pressure variables, UTM measurement was performed to investigate the bond force between the substrate and Cu, and it was confirmed that the bond force increased proportionally as the temperature and pressure increased.