• 한국재료학회지
• /
• 제22권7호
• /
• pp.374-378
• /
• 2012

In an effort to overcome the problems which arise when fabricating high-aspect-ratio TSV(through silicon via), we performed experiments involving the void-free Cu filling of a TSV(10~20 ${\mu}m$ in diameter with an aspect ratio of 5~7) by controlling the plating DC current density and the additive SPS concentration. Initially, the copper deposit growth mode in and around the trench and the TSV was estimated by the change in the plating DC current density. According to the variation of the plating current density, the deposition rate during Cu electroplating differed at the top and the bottom of the trench. Specifically, at a current density 2.5 mA/$cm^2$, the deposition rate in the corner of the trench was lower than that at the top and on the bottom sides. From this result, we confirmed that a plating current density 2.5 mA/$cm^2$ is very useful for void-free Cu filling of a TSV. In order to reduce the plating time, we attempted TSV Cu filling by controlling the accelerator SPS concentration at a plating current density of 2.5 mA/$cm^2$. A TSV with a diameter 10 ${\mu}m$ and an aspect ratio of 7 was filled completely with Cu plating material in 90 min at a current density 2.5 mA/$cm^2$ with an addition of SPS at 50 mg/L. Finally, we found that TSV can be filled rapidly with plated Cu without voids by controlling the SPS concentration at the optimized plating current density.

• 한국전기전자재료학회논문지
• /
• 제17권2호
• /
• pp.156-161
• /
• 2004

We investigated the effects of oxidizer additive on the performance of Cu-CMP process using commonly used tungsten slurry. In order to compare the removal rate and non-uniformity as a function of oxidizer contents, we used alumina-based tungsten slurry and copper blanket wafers deposited by DC sputtering method. According to the CMP removal rates and particle size distribution, and the microstructures of surface layer by SEM image as a function or oxidizer contents were greatly influenced by the slurry chemical composition of oxidizers. The difference in removal rate and roughness of copper surface are believed to cause by modification in the mechanical behavior of $Al_2$O$_3$abrasive particles in CMP slurry.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2010년도 춘계학술발표대회
• /
• pp.48.1-48.1
• /
• 2010

Cu has been used for metallic interconnects in ULSI applications because of its lower resistivity according to the scaling down of semiconductor devices. The resistivity of Cu lines will affect the RC delay and will limit signal propagation in integrated circuits. In this study, we investigated the characteristics of electroplated Cu films according to the variation of concentration of organic additives. The plating electrolyte composed of $CuSO_4{\cdot}5H_2O$, $H_2SO_4$ and HCl, was fixed. The sheet resistance was measured with a four-point probe and the material properties were investigated with XRD (X-ray Diffraction), AFM (Atomic Force Microscope), FE-SEM (Field Emission Scanning Electron Microscope) and XPS (X-ray Photoelectron Spectroscopy). From these experimental results, we found that the organic additives play an important role in formation of Cu film with lower resistivity by EPD.

• 동굴
• /
• 제76호
• /
• pp.15-17
• /
• 2006

[ $YBa_2Cu_3O_{7-{\delta}}$ ] superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-{\delta}}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-{\delta}}$ and act as linking bridge among $YBa_2Cu_3O_{7-{\delta}}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-{\delta}}$ thick films are prepared by electrophoretic co deposition. As there are only some referenced experience formula and models for co electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co electrophoretic deposition is also studied.

• 한국전기전자재료학회논문지
• /
• 제16권6호
• /
• pp.522-531
• /
• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{\delta}}$ high- $T_{c}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with MgO of 5~30 wt% each were sintered at 820~86$0^{\circ}C$ for 24 hours. The structural characteristics, critical temperature, grain size and image of mapping with respect to MgO contents were analyzed by XRD(X-Ray Diffraction), SEM(Scanning Electron Microscope) and EDS(Energy dispersive X-ray spectrometer) respectively. As MgO contents increased, intensity of MgO Peaks and ratio of Bi-2212 phase in superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2015년도 춘계학술대회 논문집
• /
• pp.178-178
• /
• 2015

SAP 씨앗층용 구리필름에 대한 결정구조와 에칭속도의 상관관계를 알아보았다. 그 결과, 저지수 면보다는 고지수면이 우선적으로 성장되어 있는 구리피막이 높은 에칭속도를 나타내었다. 이와 같은 우선결정방위와 에칭속도의 관계를 결정구조적인 관점에서 해석하였다.

• 한국분말재료학회지
• /
• 제26권5호
• /
• pp.405-409
• /
• 2019

Piezoelectric ceramic specimens with the $Pb(Mg_{1/3}Nb_{2/3})_{0.65}Ti_{0.35}O_3$ (PMN-PT) composition are prepared by the solid state reaction method known as the "columbite precursor" method. Moreover, the effects of the $Li_2O-Bi_2O_3$ additive on the microstructure, crystal structure, and piezoelectric properties of sintered PMN-PT ceramic samples are investigated. The addition of $Li_2O-Bi_2O_3$ lowers the sintering temperature from $1,200^{\circ}C$ to $950^{\circ}C$. Moreover, with the addition of >5 wt.% additive, the crystal structure changes from tetragonal to rhombohedral. Notably, the sample with 3 wt.% additive exhibits excellent piezoelectric properties ($d_{33}=596pC/N$ and Kp = 57%) and a sintered density of $7.92g/cm^3$ after sintering at $950^{\circ}C$. In addition, the sample exhibits a curie temperature of $138.6^{\circ}C$ at 1 kHz. Finally, the compatibility of the sample with a Cu electrode is examined, because the energy-dispersive X-ray spectroscopy data indicate the absence of interdiffusion between Cu and the ceramic material.

• 한국분말재료학회지
• /
• 제30권6호
• /
• pp.463-469
• /
• 2023

Aluminum alloys, known for their high strength-to-weight ratios and impressive electrical and thermal conductivities, are extensively used in numerous engineering sectors, such as aerospace, automotive, and construction. Recently, significant efforts have been made to develop novel aluminum alloys specifically tailored for additive manufacturing. These new alloys aim to provide an optimal balance between mechanical properties and thermal/electrical conductivities. In this study, nine combinatorial samples with various alloy compositions were fabricated using direct energy deposition (DED) additive manufacturing by adjusting the feeding speeds of Al6061 alloy and Al-12Si alloy powders. The effects of the alloying elements on the microstructure, electrical conductivity, and hardness were investigated. Generally, as the Si and Cu contents decreased, electrical conductivity increased and hardness decreased, exhibiting trade-off characteristics. However, electrical conductivity and hardness showed an optimal combination when the Si content was adjusted to below 4.5 wt%, which can sufficiently suppress the grain boundary segregation of the α-Si precipitates, and the Cu content was controlled to induce the formation of Al₂Cu precipitates.

• 마이크로전자및패키징학회지
• /
• 제29권3호
• /
• pp.63-71
• /
• 2022

본 연구에서는 Sn-Ag-Cu (SAC)솔더와 electroless nickel autocatalytic gold (ENAG) 표면처리 간 계면반응 및 낙하충격 신뢰성을 연구하였다. ENAG 솔더 접합부의 특성은 다른 Ni계 표면처리인 electroless nickel immersion gold(ENIG)와 electroless nickel electroless palladium immersion gold (ENEPIG)와 비교 평가 하였다. SAC솔더와 Ni계 표면처리 계면에서는 (Cu, Ni)6Sn5 intermetallic compound (IMC)가 형성되었다. IMC 두께는 SAC/ENAG와 SAC/ENEPIG는 1.15 ㎛, 1.12 ㎛로 비슷하였고, SAC/ENIG는 IMC 두께가 2.99 ㎛로 SAC/ENAG보다 2배 정도 높았다. 또한 솔더 접합부의 IMC두께는 무전해 Ni(P) 도금액의 metal turnover (MTO)조건에 영향을 받는 다는 것을 알 수 있었고, MTO가 0에서 3으로 증가하면 IMC두께가 증가함을 알 수 있었다. 전단강도는 SAC/ENEPIG의 접합강도가 가장 높았고, SAC/ENAG, SAC/ENIG 순이었다. 또한, MTO가 증가하면, 전단강도가 낮아짐을 알 수 있었다. 취성파괴도 SAC/ENEPIG가 세가지 접합부 중 가장 낮았으며, SAC/ENAG, SAC/ENIG 순이였고, 마찬가지로 MTO가 증가하면 취성파괴가 높아짐을 알 수 있었다. 낙하충격 시험에서도 0 MTO조건이 3 MTO조건보다 높은 평균파괴횟수를 갖는 것을 확인하였고, 평균파괴횟수도 SAC/ENEPIG, SAC/ENAG, SAC/ENIG순으로 높았다. 낙하 충격 후 파단면을 관찰한 결과 크랙은 IMC와 Ni(P)층 사이에서 진행되었다.

• 마이크로전자및패키징학회지
• /
• 제29권3호
• /
• pp.55-61
• /
• 2022

본 연구에서는 용융온도가 중온계 무연 솔더인 Sn-3.0Ag-0.5Cu(SAC305)와 저온계 무연 솔더인 Sn-57Bi-1Ag를 사용하여 형성된 복합 무연 솔더 접합부의 특성에 대하여 보고 하였다. SAC305 솔더볼이 형성된 ball grid array(BGA) 패키지와 Sn-57Bi-1Ag 솔더 페이스트가 도포된 flame retardant-4(FR-4) 인쇄회로기판(printed circuit board, PCB)을 리플로우 솔더링 공정을 이용하여 복합 무연 솔더 접합부를 형성 하였다. 공정 온도 프로파일을 두 가지 형태로 달리하여 리플로우 솔더링 공정을 진행하였으며 리플로우 솔더링 공정 조건에 따른 계면 반응, 금속간화합물(intermetallic compound, IMC)의 형성, Bi의 확산 거동 등 복합 무연 솔더 접합부 계면 특성을 비교 분석 하였다. 또한, 열 충격 시험을 통하여 리플로우 솔더링 공정에 따른 복합 무연 솔더 접합부의 신뢰성 특성을 비교하고 열 충격 시험 전후 전단 시험을 진행하여 접합부의 기계적 특성 변화를 분석하였다.