• Bulletin of the Korean Chemical Society
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• v.15 no.1
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• pp.20-22
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• 1994

The preparation of $YBa_2Cu_4O_8$ thick film on Ag substrate by electrophoretic deposition was directly studied. Electrophoretic deposition was carried out in solution, which was composed of presintered $YBa_2Cu_4O_8$ powder, sodium, and 2-propanol as a solvent. The deposited thick films were heat-treated in $O_2$ at 815$^{\circ}$C for 12 hours and at 450$^{\circ}$C for 12 hours. We succeeded in obtaining superconducting $YBa_2Cu_4O_8$ films on Ag substrate. Even though the chemical reactions at the $YBa_2Cu_4O_8$/Ag interface occurred in the range of 10 ${\mu}$m, superconductivity was not depressed. The thickness of the films was in the range of 60-80 ${\mu}$ m. The characteristics of the films were examined by electric resistance measurements, X-ray diffraction, and SEM observations.

• Journal of the Korean Vacuum Society
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• v.4 no.2
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• pp.172-176
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• 1995

$YBa_2Cu_3O_{7-y}$ thin films have been prepared on MgO(100)substrates placed on-axis to the target by dc magnetron sputtering in a variety of oxygen/argon gas pressures with different substrate-target distances. We found that films with the c-axis perpendicular to the substrate deposited in an optimally high gas pressure with on-axis substrate-target configuration do. Increasing the substrate-target distance was found to be effetive in reducing the resputtering effect and enhancing superconductivity of films, but not so much $\alpha$-and c-axis growth of YMCO films on MgO substrates. Dependences of the Tc, the rationj of resistances at 300K and 100K, and the X-ray diffraction pattern on the gas pressure and the substrate target distance are described.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.1
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• pp.110-114
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• 2009

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated a copper phthalocyanine (CuPc) based field-effect transistor with different substrate temperature. The CuPc FET device was made a top-contact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40nm, and the channel length was $50{\mu}m$, channel width was 3mm. We observed a typical current-voltage (I-V) characteristics in CuPc FET.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.2067_2068
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, $Cu_6Sn_5({\mu})$ and $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface. $Cu_6Sn_5({\mu})$ intermetallics layer gradually changed $Cu_3Sn({\varepsilon})$. Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only $Cu_3Sn({\varepsilon})$ intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.8
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• pp.1559-1565
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• 2009

Resistivity changes and intermetallic growth after thermal aging of Matter tin-plated copper sheet for current collector in fuel cell were investigated to survey the diffusion of Cu into Sn in interface and surface. The results show that the intermetallic growth and resistivity depended on thermal aging temperature and dwell time. In Sn plate on a Cu substrate, Cu6Sn5(${\mu}$) and Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface. Cu6Sn5(${\mu}$) intermetallics layer gradually changed Cu3Sn(${\varepsilon}$). Moreover Cu get through Sn layer and it was diffused in the surface at $200^{\circ}C$. On the other hand, only Cu3Sn(${\varepsilon}$) intermetallics layer were formed at plate/substrate interface at $300^{\circ}C$. Consequently, the intermetallics formation, thermal condition and oxidation of surface, causes increase in the resistivity of Tin-plated copper sheet.

• Journal of the Korean Ceramic Society
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• v.35 no.8
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• pp.827-835
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• 1998

Blanket Copper films were chemically vapor deposited on six kinds for substrates for scrutinizing the change of characteristics induced by the difference of substrates and seeding layers. Both TiN/Si and {{{{ { SiO}_{2 } }}/Si wafers were used as-recevied and with the Cu-seeding layers of 40${\AA}$ and 160${\AA}$ which were produced by sputtering The CVD processes were exectued at the deposition temperatures between 130$^{\circ}C$ and 260$^{\circ}C$ us-ing (hfc)Cu(VTMS) as a precursor. The deposition rate of 40$^{\circ}C$ Cu-seeded substrates was higher than that of other substrates and especially in seeded {{{{ { SiO}_{2 } }}/Si substrate because of the incubation period reducing in-duced by seeding layer at the same deposition time and temperature. The resistivity of 160${\AA}$ Cu seeded substrate was lower then that of 40 ${\AA}$ because the nucleation and growth behavior in Cu-island is different from the behavior in {{{{ { SiO}_{2 } }} substrate due to the dielectricity of {{{{ { SiO}_{2 } }}.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.354-355
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• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from 100[$^{\circ}C$] to 300[$^{\circ}C$] at intervals of 50[$^{\circ}C$].

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.63-69
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• 2007

We investigated interconnection processes using Cu vias for MEMS sensor packages. Ag paste layer was formed on a glass substrate and used as a seed layer for electrodeposition of Cu vias after bonding a Si substrate with through-via holes. With applying electrodeposition current densities of $20mA/cm^2\;and\;30mA/cm^2$ at direct current mode to the Ag paste seed-layer, Cu vias of $200{\mu}m$ diameter and $350{\mu}m$ depth were formed successfully without electrodeposition defects. Interconnection processes for MEMS sensor packages could be accomplished with Ti/Cu/Ti line formation, Au pad electrodeposition, Sn solder electrodeposition and reflow process on the Si substrate where Cu vias were formed by Cu electrodeposition into through-via holes.

• Progress in Superconductivity
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• v.7 no.2
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• pp.145-151
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• 2006

Nickel and nickel-tungsten alloy were electroplated on a cold rolled and heat treated copper(Cu) substrate. 4 mm-thick high purity commercial grade Cu was rolled to various thicknesses of 50, 70, 100 and 150 micron. High reduction ratio of 30% was applied down to 150 micron. Rolled texture was converted into cube texture via high temperature heat treatment at $400-800^{\circ}C$. Grain size of Cu was about 50 micron which is much smaller compared to >300 micron for the Cu prepared using smaller reduction pass of 5%. 1.5 km-long 150 micron Cu was fabricated with a rolling speed of 33 m/min and texture of Cu was uniform along length. Abnormal grain growth and non-cube texture appeared for the specimen anneal above $900^{\circ}C$. 1-10 micron thick Ni and Ni-W film was electroplated onto an annealed cube-textured Cu or directly on a cold rolled Cu. Both specimens were annealed and the degree of texture was measured. For electroplating of Ni on annealed Cu, Ni layer duplicated the cube-texture of Cu substrate and the FWHM of in plane XRD measurement for annealed Cu layer and electroplated layer was $9.9^{\circ}\;and\;13.4^{\irc}$, respectively. But the FWHM of in plane XRD measurement of the specimen which electroplated Ni directly on cold rolled Cu was $8.6^{\circ}$, which is better texture than that of nickel electroplated on annealed Cu and it might be caused by the suppression of secondary recrystallization and abnormal grain growth of Cu at high temperature above $900^{\circ}C$ by electroplated nickel.

• Transactions on Electrical and Electronic Materials
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• v.13 no.4
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• pp.185-187
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• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.