• Journal of the Microelectronics and Packaging Society
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• v.15 no.3
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• pp.9-17
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• 2008

Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.3
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• pp.59-63
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• 2010

Immersion Sn plating was produced on Cu foil by distributing nano-sized diamonds (ND). The ND distributed on the coating surface broke the continuity of Sn-oxide layer, therefore leading to penetrate the molten solder through the oxide and retarding the wettability degradation during a reflow process. Furthermore, the ND in the Sn coating played a role of diffusion barrier for Sn atoms and decreased the growth rate of intermetallic compound ($Cu_6Sn_5$) layer during the solid-state aging. The study confirmed the importance of ND to improve the wettability and reliability of the Sn plating. Complete dispersion of the ND within the immersion Sn plating needs to be further developed for the electronic packaging applications.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.241-250
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• 2000

Popcorn cracking phenomena frequently occur in thin plastic packages during the solder reflow process, which are definitely affected by poor adhesion of Cu-based leadframe to epoxy molding compounds (EMCs). In the present work, in order to enhance the adhesion strength, a brown-oxide treatment on the Cu-based leadframe was carried out and the adhesion strength of leadframe/EMC interface was measured in terms of fracture toughness by using sandwiched double-cantilever beam (SDCB) specimens. After the adhesion tests, fracture surfaces were analyzed by SEM, AES, EDS and AFM to make the failure path clear. Results showed that failure path was closely related to the oxidation time and the interfacial fracture toughness.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.10
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• pp.865-871
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• 2014

Paradigm shift to 3-D chip stacking in electronic packaging has induced a lot of integration challenges due to the reduction in wafer thickness and pitch size. This study presents a hybrid bonding technology by self-alignment effect in order to improve the flip chip bonding accuracy with ultra-thin wafer. Optimization of Cu pillar bump formation and evaluation of various factors on self-alignment effect was performed. As a result, highly-improved bonding accuracy of thin wafer with a $50{\mu}m$ of thickness was achieved without solder bridging or bump misalignment by applying reflow process after thermo-compression bonding process. Reflow process caused the inherently-misaligned micro-bump to be aligned due to the interface tension between Si die and solder bump. Control of solder bump volume with respect to the chip dimension was the critical factor for self-alignment effect. This study indicated that bump design for 3D packaging could be tuned for the improvement of micro-bonding quality.

• Journal of Welding and Joining
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• v.27 no.1
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• pp.85-89
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• 2009

Reflow process conditions were investigated for 0402 electric parts with Sn-3.0Ag-0.5Cu solders. Circle hole shape metal mask with 100 m thickness showed excellent printability. Self alignment abilities were 71% for 1005 chips, 52% for 0603 chips, and 3% for 0402 chips. Average joining strengos were 1990 gf for 1005 chips, 867 gf for 0603 chips, and 525 gf for 0402 chips. As mis-mounting angle increased, joining strength decreased. Considering self-alignment ability, mounting angle had to be under $5^{\circ}$ and contact area of the chips had to be over 40% for Pb-free soldering process for 0402 chips.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.3
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• pp.31-36
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• 2012

In this study, the complex vibration reliability of Sn-3.5Ag and Sn-0.7Cu having a high melting temperature was investigated. For manufacturing of BGA test samples, Sn-3.5Ag and Sn-0.7Cu balls were joined on BGA chips finished by ENIG and the chips were mounted on PCB finished OSP by using reflow process. For measuring of resistance change during complex vibration test, daisy chain was formed in the test board. From the results of resistance change and shear strength change, the reliability of two solder balls was compared and evaluated. During complex vibration for 120 hours, Sn-0.7Cu solder was more stable than Sn-3.5Ag solder in complex vibration test.

• Journal of Welding and Joining
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• v.31 no.5
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• pp.54-58
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• 2013

Joint properties of vehicle ECU (Electric Control Unit) module which was manufactured by using Sn-Cu-Cr-Ca alloy were investigated. A new solder which has a middle melting temperature about $231^{\circ}C$ was fabricated as the type of 300um solder ball and paste type. The prototype modules were made by reflow process and measured spreadability, wettability shear strength and estimated interface reaction. The spreadability of the alloy was about 84% from the measurement of contact angle of the solder ball and the wetting force was measured 2mN. The average shear strength of the module which was manufactured by using the solder paste, was 1.9 $kg/mm^2$. Also, the thickness of IMC(intermetallic compound) was evaluated with various aging temperature and time in order to understand Cr effect on Sn-0.7Cu solder. $Cu_6Sn_5$ IMC was formed between Cu pad and the solder alloy and the average thickness of the $Cu_6Sn_5$ IMC was measured about 4um and it was about 50% of thickness of $Cu_6Sn_5$ IMC in Sn-0.7Cu. It is expected to have a positive effect on reliability of the solder joint.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.25-31
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• 2010

In this study, we investigated the morphology and thermal stability of interfacial phases in joint between lead free solder(Sn-3.0Ag-0.5Cu) and electroless Ni-W-P under bump metallizations(UBM) with different tungsten contents as a function of thermal aging. Content of phosphorus of each deposits was fixed at 8 wt.%, and content of tungsten was variated each 0, 3, 6 and 9 wt.%. Specimens were prepared by reflowing at $255^{\circ}C$, aging range was $200^{\circ}C$ and up to 2 weeks. After reflow process, in the electroless Ni(W)-P/solder joint, the interfacial intermetallic compound(IMC) was showed both $(Cu,Ni)_6Sn_5$ and $(Ni,Cu)_3Sn_4$. UBM and generated IMC at the interface of lead free solder was proportionally increased with aging time. The thickness of IMC was increased because the generation rate of $Ni(W)_3P$ decreased with increasing contents of W.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.

• Journal of the Korean institute of surface engineering
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• v.48 no.4
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• pp.131-135
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• 2015

We investigated the surface morphology and the change of Ag concentration for SnAg electrodeposits according to the current density using labmade and commercial plating solutions. The concentration of Ag in the SnAg electrodeposits decreased with increasing the current density. The Ag concentrations at the conditions of over $50mA/cm^2$ were below 3 wt% and the surface was relatively smooth. Cu pillar bump was fabricated by using SnAg electroplating, and it was reflowed at $240^{\circ}C$ for 90 sec. The cross-sectional microstructure was investigated by using EBSD measurement and it was found that the grain size of SnAg became smaller by increasing the number of reflow treatments.