• 대한치과보철학회지
• /
• 제27권1호
• /
• pp.143-179
• /
• 1989

To observe the bonding behavior of palladium-based alloys to porcelain; 1. Pd-Co binary alloy with the higher cobalt content, 2. Pd-Co binary alloy with the lower cobalt content, 3. Pd-Ag-Sn ternary alloy, 4. Pd-Ag binary alloy, 5. Pd-Cu-Au ternary alloy and 6. Pd-Cu binary alloy were made as 6 groups of experimental alloys. Each group of alloy was divided into 4 sub-groups such as one sub-group that was not degassed and three sub-groups that degassed for 5 minutes, 10 minutes and 15 minutes. On each specimen, weight changes after degassing, morphological changes of oxide layer by changing the degassing time, compositional changes at metal-ceramic interface and bond strength of metal-ceramic measured with planar shear test were observed and compared. The results of the present study allow the following conclusions to be drawn: 1. The alloy showing the greatest bond strength was Pd-Cu alloy without gold and bond strength was decreased by alloying gold to them. 2. Although Pd-Co alloy showed the most prominent oxidation behavior, bond strength of them to porcelain was not greatly high by the formation of porosities at metal-ceramic interfaces. 3. Likewise tin, cobalt formed the peaks on line profiles at metal-ceramic interface, however copper did not exhibit such peaks on line profiles. 4. Mainly, oxide layer on Pd-Co alloy was composed with cobalt, and for Pd-Co alloy with higher cobalt content the rise of bond strength was not significant by increased degassing time. 5. On Pd-Ag alloy not containing tin, during degassing for 15 minutes silver content was increased at metal-ceramic interface. 6. As an oxidized element, tin formed the oxide layers that widen their area by increasing the degassing time, while cobalt and copper showed the morphological changes of particle or crystal on oxide layer.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.68-68
• /
• 2011

As feature size is smaller, new technology are needed in semiconductor factory such as gap-fill technology for sub 100nm, development of ALD equipment for Cu barrier/seed, oxide trench etcher technology for 25 nm and beyond, development of high throughput Cu CMP equipment for 30nm and development of poly etcher for 25 nm and so on. We are focus on gap-fill technology for sub-30nm. There are many problems, which are leaning, over-hang, void, micro-pore, delaminate, thickness limitation, squeeze-in, squeeze-out and thinning phenomenon in sub-30 nm gap fill. New gap-fill processes, which are viscous oxide-SOD (spin on dielectric), O3-TEOS, NF3 Based HDP and Flowable oxide have been attempting to overcome these problems. Some groups investigated SOD process. Because gap-fill performance of SOD is best and process parameter is simple. Nevertheless these advantages, SOD processes have some problems. First, material cost is high. Second, density of SOD is too low. Therefore annealing and curing process certainly necessary to get hard density film. On the other hand, film density by Flowable oxide process is higher than film density by SOD process. Therefore, we are focus on Flowable oxide. In this work, dielectric film were deposited by PECVD with TSA(Trisilylamine - N(SiH3)3) and NH3. To get flow-ability, the effect of plasma treatment was investigated as function of O2 plasma power. QMS (quadruple mass spectrometry) and FTIR was used to analysis mechanism. Gap-filling performance and flow ability was confirmed by various patterns.

• 한국정보통신학회:학술대회논문집
• /
• 한국해양정보통신학회 2003년도 춘계종합학술대회
• /
• pp.366-369
• /
• 2003

High T$_{c}$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40~50${\mu}{\textrm}{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about 945$^{\circ}C$.>.

• 한국분말재료학회지
• /
• 제10권2호
• /
• pp.136-141
• /
• 2003

In the present study, $TiO_2$ imbedded copper matrix powders have been successfully prepared from the ($CuSO_4+TiO_2+Zn$) composite salt solution. The composite $Cu/TiO_2$ powders were formed by drying the solution at $200{\sim}~400^{\circ}C$ in the hydrogen atmosphere. Photocatalytic characteristics was evaluated by detecting TOC (total organic carbon) amount with TOC analyzer (model 5000A Shimadzu Co). Phase analysis of $Cu/TiO_2$ composite powders was carried out by XRD, DSC and powder size was measured with TEM. The mean particle size of composite powders was about 100 nm and a few zinc and copper oxide phases was included. The reduction ratio of TOC amount was 60% by the composite $Cu/TiO_2$ powders under the UV irradiation for 8 hours.

• 소성∙가공
• /
• 제16권5호통권95호
• /
• pp.375-380
• /
• 2007

The bimetals of home appliances are mainly manufactured by cladding process and these are almost consisted with Cu alloy and Ni alloy. But it is very difficult to clad these alloys, because the brittle $Cu_3O_4$ oxide film formed easily on Cu alloy surface during cladding process. Clad rolling and heat treatment processes were applied for the development of bimetals by using the Ni alloy and the 3 types of Cu alloys. Optical microstructure, micro-hardness, specific resistance, and deflection and line profile of newly processed bimetals specimens were observed and measured in this paper. Inter-diffusion was observed between Cu and Ni element in the interface of heat treated Cu alloy and Ni alloy clad material. The C1220 and Invar36 clad material showed the best property of deflection among the 3 kind of clad materials.

• Journal of information and communication convergence engineering
• /
• 제1권2호
• /
• pp.63-66
• /
• 2003

High $T_c$ superconducting lines will be applied as key materials in the areas of power transmission line; magnetic levitation of vehicle; magnetic separation; magnetic energy storage and marine propulsion. A combination method of electrophoresis deposition and zone-melting for preparation of YBaCuO tape is proposed. The submicron particle powder of YBaCuO made by sol-gel method is used in the electrophoresis process. A 40∼50 ${\mu}\textrm{m}$ thickness of YBaCuO film on Ag plate could be deposited in about three minutes. After deposition the film is rolled and heat treated in order to increase the density and the adhesion of the film to the Ag plate. Silver(Ag) and lead oxide(PbO) were added in the YBaCuO powder in order to reduce its melting point. The YBaCuO coating with controlled Ag and PbO contents was preliminarily zone-melted at about $945^{\circ}C$.

• 한국재료학회지
• /
• 제6권2호
• /
• pp.133-137
• /
• 1996

본연구에서는 n-type 세라믹 초전도체인 Nd2-xCexCuO4상의 산소함량에 따른 \ulcorner기적저항의 변화를 고찰하고자 하였다. 일반적인 소결과 어닐링과정을 결쳐 제조된 Nd1.85Ce0.15CuO4-x 시편을 여러 온도와 산소분압의 분위기하에서 어닐링시킴으로써 산소의 함유량이 다른 시편들을 준비하였고 각각의 시편의 산소함량은 TGA(Thermogravimetric Analysis0에 의해 측정하였다. Nd1.85Ce0.15CuO4-x시편의 전기적 저항 측정은 표준 4-탐침방법을 이용하여 액체헬륨을 주입시켜 상온으로부터 4K까지 측정하였다. Nd1.85Ce0.15CuO4-x시편의 산소함량, 3.96$\leq$4-x$\leq$4.0의 범위에서 전기적저항을 측정한 결과 초전도특성이 나타나기 시작한 임계산소함량은 4-x=3.990이었고 이때의 임계온도 Tc=12K이었다. 또한 임계온도, Tc는 산소함량 4-x=3.96에서 24K로 측정되었다. 특이할 만한 현상은 CuO/Cu2O 열역학적 상전이가 일어나는 조건이 Nd1.85Ce0.15CuO4-x 시편의 초전도가 일어나는 임계와 일치하였다. 즉, Cu2O가 안정한 영역에서는 초전도특성이 나타났고 CuO가 안정한 영역에서는 초전도특성이 나타나지 않았다.

• 한국재료학회지
• /
• 제9권2호
• /
• pp.124-131
• /
• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Macromolecular Research
• /
• 제14권1호
• /
• pp.38-44
• /
• 2006

Vacuum deposited copper phthalocyanine (CuPc) was placed as a thin interlayer between indium tin oxide (ITO) electrode and a hole transporting layer (HTL) in a multi-layered, organic, light-emitting diode (OLEOs). The well-stacked CuPc layer increased the stability and efficiency of the devices. Thermal annealing after CuPc deposition and magnetic field treatment during CuPc deposition were performed to obtain a stacked-CuPc layer; the former increased the stacking density of the CuPc molecules and the alignment of the CuPc film. Thermal annealing at about 100$^{circ}C$ increased the current flow through the CuPc layer by over 25$\%$. Surface roughness decreased from 4.12 to 3.65 nm and spikes were lowered at the film surface as well. However, magnetic field treatment during deposition was less effective than thermal treatment. Eventually, a higher luminescence at a given voltage was obtained when a thermally-annealed CuPc layer was placed in the present, multi-layered, ITO/CuPc/NPD/Alq3/LiF/AI devices. Thermal annealing at about 100$^{circ}C$ for 3 h produced the most efficient, multi-layered EL devices in the present study.

• Corrosion Science and Technology
• /
• 제18권6호
• /
• pp.300-311
• /
• 2019

The corrosion behaviors of twinning-induced plasticity (TWIP) steels with different alloying elements (Cu, Al, Si) in a neutral aqueous environment were investigated in terms of the characteristics of the corrosion products formed on the steel surface. The corrosion behavior was evaluated by measuring potentiodynamic polarization test and electrochemical impedance spectroscopy. For compositional analysis of the corrosion products formed on the steel surface, an electron probe x-ray micro analyzer was also utilized. This study showed that the addition of Cu to the steel contributed to the increase in corrosion resistance to a certain extent by the presence of metallic Cu in discontinuous form at the oxide/steel interface. Compared to the case of steel with Cu, the Al-bearing specimen exhibited much higher polarization resistance and lower corrosion current by the formation of a thin Al-enriched oxide layer. On the other hand, Si addition (3.0 wt%) to the steel led to an increase in grain size, which was twice as large as that of the other specimens, resulting in a deterioration of the corrosion resistance. This was closely associated with the localized corrosion attacks along the grain boundaries by the formation of a galvanic couple with a large cathode-small anode.