• Proceedings of the Materials Research Society of Korea Conference
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• 2000.11a
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• pp.50-50
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• 2000

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.194-200
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• 2002

MOCVD(metal-organic chemical vapor deposition) copper thin film was annealed at various conditions and the eletrical properties and micro-structures were investigated to find the optimal annealing condition and its effect. Cu thin film annealed at Ar 1 torr, $400^{\circ}C$ had the most improved resistivity of 1.98 $\mu\Omega$cm, and texture; the ratio of $I_{(111)}/I_{(200)}$ was varied from 2.03 to 3.11, and Cu thin film annealed at Ar 1 torr, $450^{\circ}C$ had the largest grain size and uniformity. After the annealing, the EM(electromigration) test was followed to ensure the improved properties by annealing. Compare to other conditions, Cu patterns annealed at Ar 1 torr, $400 ^{\circ}C$ had the most improved properties when it came to the EM resistance, which was due to the low resistivity, the preferential evolution of texture to (111) plane, and the reduction of surface roughness of annealed copper film.

• Progress in Superconductivity
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• v.3 no.1
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• pp.120-124
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• 2001

To establish the deposition condition of YBCO thin film on MgO single crystal substrates, processing parameters of deposition temperature, chemical composition and oxygen partial pressure were controlled. When using a Ba-deficient composition of YB $a_{1.8}$ $Cu_3$$O_{x}$, non-superconducting phase like CuO, $CuYO_2$ were formed, but BaCu02 was formed together with Yl23 phase when the starting composition was Ba-rich ($YBa_{2.3}$ $Cu_3$ $O_{x}$). The epitaxially grown Yl23 phase was formed at 760-$810^{\circ}C$ and $P_{O2}$=0.29-0.91 Torr.r.r.r.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.21-26
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• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.100-103
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• 2001

In this study, the adhesion and thermal property of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. The thermal stability was investigated by measuring the resistivity as post-annealing temperature far the multilayered Cu/TaN/Si specimen which was annealed at Ar gas. The adhesion property of Cu 171ms was evaluated by the scratch test. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.27-33
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• 2000

The selective chemical vapor deposition techniques for Cu metallization were studied. For enhancing the selectivity, furnace annealing and N$_{2}$ plasma were treated on patterned TiN/BPSG prior to the copper deposition. As a result, Cu did not deposited lead to suppressing the nucleation on BPSG singificantly. With the increasement the plasma treatment temperature, copper nucleation on BPSG was suppressed mote effectively, From TOF-SIMS(Time-of-Flight Secondary ion Mass Spectrometry), it is considered that annealing and N$_{2}$ plasma treatment remove hydroxyl(0-H) group so that eliminating the nucleation site for copper precursor enhance the selectivity.

• Bulletin of the Korean Chemical Society
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• v.24 no.5
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• pp.647-649
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• 2003

• Korean Journal of Materials Research
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• v.9 no.2
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• pp.124-131
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• 1999

Copper film, which is expected to be used as interconnection material for 1 giga DRAM integrated circuits was deposited on hole and trench patterns by Metal Organic Chemical Vapor Deposition(MOCVD) method. After a reflow process, contact and L/S patterns were filled by copper and the characteristics of the Cu reflow process were investigated. When deposited Cu films were reflowed, grain growth and agglomeration of Cu have occurred in surfaces and inner parts of patterns as well as complete filling in patterns. Also Cu thin oxide layers were formed on the surface of Cu films reflowed in $O_2$ambient. Agglomeration and oxidation of Cu had bad influence on the electrical properties of Cu films especially, therefore, their removal and prevention were studied simultaneously. As a pattern size is decreased, preferential reflow takes place inside the patterns and this makes advantages in filling patterns of deep submicron size completely. With Cu reflow process, we could fill the patterns with the size of deep sub-micron and it is expected that Cu reflow process could meet the conditions of excellent interconnection for 1 giga DRAM device when it is combined with Cu MOCVD and CMP process.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.39-40
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• 1998

Diffusion barrier characteristics of hf(C,N) thin films for Cu metalliztion was investgated. Hf(C,N) thin films were depposited on Si(100) suvstrates by ppulsed D. C pplasma enhanced metal-organic chemical vappor depposition (ppE-MOCVD) using Tetrakis diethyl amido hafnium (Hf[NC2H5)2]4 : TDEAHf) and N2 as pprecursors. X-ray diffraction analyses sheet resistance measurment and Rutherford backscattering sppectroscoppy analyses revealed that HF(C,N) films pprevent diffusion of Cu fairly well upp to $600^{\circ}C$. At $700^{\circ}C$ however Hf(C,N) films allowed a significant diffusion of Cu into the Si substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.370-370
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• 2012

Feature size of Cu interconnects keep shrinking into several tens of nanometer level. For this reason, the Cu interconnects face challenging issues such as increase of electro-migration, line-width dependent electrical resistivity increase, and gap-filling difficulty in high aspect ratio structures. As the thickness of the Cu film decreases below 30 nm, the electrical resistivity is not any more constant, but rather exponential. Research on alloying with other elements have been started to inhibit such escalation in the electrical resistivity. A faint trace of Al added in Cu film by sputtering was reported to contribute to suppression of the increase of the electrical resistivity. From an industrial point of view, we introduced cyclic metal organic chemical vapor deposition (MOCVD) in order to control Al concentration in the Cu film more easily by controlling the delivery time ratio of Cu and Al precursors. The amount of alloying element could be lowered at level of below 1 at%. Process of the alloy formation was applied into gap-filling to evaluate the performance of the gap-filling. Voidless gap-filling even into high aspect ratio trenches was achieved. In-depth analysis will be discussed in detail.