• Title/Summary/Keyword: Cu CECVD

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Study on the Mechanism and Modeling for Super-filling of High-Aspect-Ratio Features with Copper by Catalyst Enhanced Chemical Vapor Deposition Coupled with Plasma Treatment (플라즈마 처리와 결합된 Cu 촉매반응 화학기상증착법의 메커니즘과 고종횡비 패턴의 충진양상 전산모사에 대한 연구)

  • Kim, Chang-Gyu;Lee, Do-Seon;Lee, Won-Jong
    • Korean Journal of Metals and Materials
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    • v.49 no.4
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    • pp.334-341
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    • 2011
  • The mechanism behind super-filling of high-aspect-ratio features with Cu by catalyst-enhanced chemical vapor deposition (CECVD) coupled with plasma treatment is described and the metrology required to predict the filling feasibility is identified and quantified. The reaction probability of a Cu precursor was determined as a function of substrate temperature. Iodine adatoms are deactivated by the bombardment of energetic particles and also by the overdeposition of sputtered Cu atoms during the plasma treatment. The degree of deactivation of adsorbed iodine was experimentally quantified. The quantified factors, reaction probability and degree of deactivation of iodine were introduced to the simulation for the prediction of the trench filling aspect by CECVD coupled with plasma treatment. Simulated results show excellent agreement with the experimental filling aspects.