• Korean Journal of Crystallography
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• v.8 no.1
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• pp.1-5
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• 1997

The crystal structure of the title compound consists of discrete 4-N,N-dimethylamino-4'-N'-methyl-stilbazolium, $C_{16}H_{19}N_2$, and tosylate, $C_7H_7SO_3$, dimer. The 4-N,N-dimethylamino-4'-N'-methyl-stilbazolium molecule has a trans conformation at the central C=C double bond: the dihedral angle between the phenyl and the pyridyl rings is $5.7(2)^{\circ}$ and the whole molecule is planar within $0.138(8){\AA}$. Tosylate molecules display hydrogen-bonded dimers with the O-H...O distances of 2.855(9) and $2.899(8){\AA}$, respectively. The shortest intermolecular contact is the distance $3.10(1){\AA}$ between O(3) and C(16).

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.15-20
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• 1998

Single crystals of lithium heptaborate, Li3B7O12(M=288.49), have been grown and their structure was determined by the x-ray powder diffraction and the single crystal diffraction technique. It is found that the borate anion consists of two(B3O7)3- and (B3O8)5- groups a unit cell. The space group was determined to be P-1(Ci1) with a=6.500(3) Å, b=7.839(2) Å, c=8.512(1) Å, α=92.07(2)˚, β=104.97(2)˚, γ=99.35(3)˚, V=412.0(2) Å3, Z=2 Dx=2.32 g cm-3, MoKα, λ=0.71069 Å, μ=2.15cm-1, T=293K. The structure was refined to R=0.0339 and wR=0.0882 for 2296 unique reflections by the single crystal diffraction. By the x-ray powder diffraction, we could obtain the similar results.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.30-38
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• 1998

A new frequency weighing sensor was applied to grow Bi12GeO20 crystals in the auto-di-ameter control system of Czochralski method. The rotation rate was varied in the range of 23 to 21 rpm to preserve flat interface in a given heat configuration. To prevent the constitutional super-cooling from the evaporation loss, 105% stoichiometric amount of Bi2O3 was employed, equivalent to 6.18 molar ratio of Bi2O3 to GeO2. Transparent and light brown Bi12GeO20 single crystal in uniform diameter was grown. The dislocation density was determined to be 103/cm2 corresponding to the optical quality in commercial applications. The grown crystal measured diameter 25 mm and length 70 mm and the preferred growth direction was confirmed to be <110>.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.48-52
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• 1998

The new Nd3Ba5Co4O15 phase was synthesized with Nd2O3, BaCO3, and Co3O4 by solid state reaction at 1200℃ with intermittent grinding. The crystal structure of Nd3Ba5Co4O15 has been refined on X-ray diffraction powder data by means of Rietveld method. The starting model was based on the Nd3.43Ba4.42Co2.23Al1.77O15 structure. The crystal system was hexagonal, space group P63mc(186), a=11.629(3) Å, c=6.842(2) Å. Final R values were Rwp=0.097 and Rp=0.068. The structure consists of clusters of CoVICoIV3O15 in which a CoVI octahedron shares corners with 3CoIV tetrahedra.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.53-63
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• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.64-70
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• 1998

Porous body was prepared from coal fly ash 70 wt%0clay 30 wt% slip using DCC(Direct Coagulated Casting) method. Effect of the specific gravity of the slip on the pore size and distribution of the sintered body was examined by the SEM observation of microstructure and mercury porosimetry measurement of the pore size distribution. Average pore size of the porous sintered body was about 2.5μm for all slips with specific gravity of 1.55, 1.60 and 1.65g/cm3, respectively. Sintered body prepared from the slip of specific gravity of 1.60g/cm3 have the narrowest pore size distribution. slip of specific gravity of 1.55g/cm3 shows broader pore size distribution due to slow gellation process. Slip of specific gravity of 1.65g/cm3 required large amount of deflocculant and showed large variation of the viscosity with addition of coagulant which resulted in very unstable slip properties.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.71-76
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• 1998

Crystal structure of Bis(ethylenediamine)palladium(II)-Bis(oxalato)palladate(II0 has been determined by X-ray crystallography. Crystal data : (Pd(C2H8N2)2.Pd(C2O4)2), Fw=509.04, Monocline, Space Group P21/c (no=14), a=6.959(2), b=13.506(2), c=15.339(2) Å, β=99.94(3), Z=4, V=1420 Å3, Dc=2.380 gcm-3, μ=25.46cm-1, F(000)=992. The intensity data were collected with Mo-Kα radiation (λ=0.7107 Å) on an automatic four-circle diffractometer with a graphite monochromater. The structure was solved by Patterson method and refined by full matrix least-square methods using unit weights. The final R and S values were R=0.021, Rw=0.030, Rall=0.032 abd S=2.1 for 1472 observed reflections. The essentially planar complex anions form diade of interplanar distances of 3.41 Å and their diads are stacked along aaxis with interplanar separation of 3.44 Å.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.66-75
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• 1990

The Pd-Te system has been investigated by differential thermal analysis, X-ray diffration, electron probe microanalysis and reflected light microscopy. New phase relations in 0-50at% Te portion of the binary system are proposed. Eight binary phases exist in the system:Pd17Te4, Pd20Te7.PdsTe3, P477e3, P497e4, P637e2, PeTe and PaTe2. Of these, P677e3 is a newly reported phase. P4177e4 is cubic, space group Fd3c, with a=12.678(5)A. The X-ray powder data of PdsTe3, indexed on an orthorhombic cell, give a= 12.843(3), b=15.126(3), c: 11.304(2)A and those of PdTTe.1, indexed on a monoclinic cell, give a=7.444(1), b= 13.918(2) , c=8.873(2)A. p =92.46(2). Some physical and optical properties of synthetic phases in the system are also reported.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.76-83
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• 1990

The structures of dehydrated fully Ca2+ _exchanged zeolite A (a: 12.2a3(2) A and of its iodine sorption complex (a=12.258(2) A) have been determined by single-crystal X-ray diffraction methods in the cubic space group. Pm3m at 21(1)℃.the structures were refined to final R(weighted) indices of 0.081 with 206 reflections and 0.084 with 173 reflections, respectively for which I>3 w (I). In each structure. six divalent cations are located on three different theefold axes associated with 6-ring oxygens. Dehydrated Ca2+_A sorbs ca. 6.0 diiodine molecules per unit cell at 80℃(vapor pressure of I: is ca. 14.3 Torr). Each iodine molecule makes a close approach. along its ahs to framework oxygen atom with I-I distance of 2.71(2) A, I-O distance of 3.32(3) k. and I-I-0=180℃. The result indicates that diiodine molecule forms charge transfer complex with framework oxygen.

• Korean Journal of Crystallography
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• v.1 no.2
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• pp.99-104
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• 1990

The hetero-epitaxial growth of AmB v type onto-electronic material is attempted by means of the laser-induced chemical vapour deposition technique. The bimolecular gas phase reaction of trimethylgallium with ammonia on (001) alumina substrate for the epitaxy of gallium nitride is chosen as a model system. In this study, ArF exciter laser (193nm) is employed as a photon source. Marked difference is found in nucleation and in subsequent crystal incorporation between the doposits formed with and without the laser-irradiation. The surface coverage with isomorphically grown drystallites is pronounced upon "volume-excited" irradiation in comparison with the conventional thermal process. As to the crystal structure of the grown layers, the laser-induced deposits of GaN may be represented by either of the following two models: (001) plane of sapphire //y (001) plane of wurtzite-type GaN, OR (001) plane of sapphire//(001) plane of wurtzite-type-GaN (111) plane of twinned zinc blende-type GaN.