• 제목/요약/키워드: Crystallization speed

검색결과 65건 처리시간 0.029초

V2O5 및 TeO2 함유 유리를 이용한 염료감응형 태양전지 패널의 레이저 봉착 (Laser Sealing of Dye-Sensitized Solar Cell Panels Using V2O5 and TeO2 Contained Glass)

  • 조성진;이경호
    • 한국세라믹학회지
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    • 제51권3호
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    • pp.170-176
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    • 2014
  • Effective glass frit compositions enabled to absorb laser energy, and to seal a commercial dye-sensitized solar-cell-panel substrate were developed by using $V_2O_5$-based glasses with various amounts of $TeO_2$ substitution. The latter was intended to increase the lifetime of the solar cells. Substitution of $V_2O_5$ by $TeO_2$ provided a strong network structure for the glasses via the formation of tetrahedral pyramids in the glass, and changed the various glass properties, such as glass transition temperature ($T_g$), dilatometric softening point ($T_d$), crystallization temperature, coefficient of thermal expansion (CTE), and glass flowage without any detrimental effect on the laser absorption property of the glasses. The thermal expansion mismatch (${\Delta}{\alpha}$) between the glass frit and the substrate could be controlled within less than ${\pm}5%$ by addition of 10 wt% of ${\beta}$-eucryptite. An 810 nm diode laser was used for the sealing test. The laser sealing test revealed that the VZBT20 glass frit with 10 wt% ${\beta}$-eucryptite was successfully sealed the substrates without interfacial cracks and pores. The optimum sealing conditions were provided by a beam size of 3 mm, laser power of 40 watt, scan speed of 300 mm/s, and 200 irradiation cycles.

Invention of Ultralow - n SiO2 Thin Films

  • Dung, Mai Xuan;Lee, June-Key;Soun, Woo-Sik;Jeong, Hyun-Dam
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.281-281
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    • 2010
  • Very low refractive index (<1.4) materials have been proved to be the key factor improving the performance of various optical components, such as reflectors, filters, photonic crystals, LEDs, and solar cell. Highly porous SiO2 are logically designed for ultralow refractive index materials because of the direct relation between porosity and index of refraction. Among them, ordered macroporous SiO2 is of potential material since their theoretically low refractive index ~1.10. However, in the conventional synthesis of ordered macroporous SiO2, the time required for the crystallization of organic nanoparticles, such as polystyrene (PS), from colloidal solution into well ordered template is typical long (several days for 1 cm substrate) due to the low interaction between particles and particle - substrate. In this study, polystyrene - polyacrylic acid (PS-AA) nanoparticles synthesized by miniemulsion polymerization method have hydrophilic polyacrylic acid tails on the surface of particles which increase the interaction between particle and with substrate giving rise to the formation of PS-AA film by simply spin - coating method. Less ordered with controlled thickness films of PS-AA on silicon wafer were successfully fabricated by changing the spinning speed or concentration of colloidal solution, as confirmed by FE-SEM. Based on these template films, a series of macroporous SiO2 films whose thicknesses varied from 300nm to ~1000nm were fabricated either by conventional sol - gel infiltration or gas phase deposition followed by thermal removal of organic template. Formations of SiO2 films consist of interconnected air balls with size ~100 nm were confirmed by FE-SEM and TEM. These highly porous SiO2 show very low refractive indices (<1.18) over a wide range of wavelength (from 200 to 1000nm) as shown by SE measurement. Refraction indices of SiO2 films at 633nm reported here are of ~1.10 which, to our best knowledge, are among the lowest values having been announced.

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Melt-spun $Nd_{14}Fe_{80}B_6$ 리본합금의 자기적 특성분석 (Analysis of magnetic properties for the melt-spun $Nd_{14}Fe_{80}B_6$ ribbon alloy)

  • 정강섭;성학제;김건한;박윤창;서수정;이경섭
    • 분석과학
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    • 제8권3호
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    • pp.341-350
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    • 1995
  • Melt-spinning법을 이용하여 $Nd_{14}Fe_{80}B_6$ 조성의 리본합금을 제조하고 각 제조조건별 시편에 대한 자기적 특성을 분석하였다. 리본합금의 미세구조와 자기적 특성은 냉각속도 및 열처리 조건에 민감하게 변화하였다. As-quenched 상태의 경우 wheel 속도 20m/sec에서 가장 좋은 자기적 특성을 나타내었으며, 비정질 상태의 리본시편에 대한 열처리 효과는 22m/sec에서 제조된 리본시편을 $600^{\circ}C$에서 30분간 진공열처리하였을 때 가장 좋은 결과를 얻을 수 있었다. 또한 $Nd_2Fe_{14}B$상의 결정화 온도는 DTA 분석결과 $595^{\circ}C$ 부근이었다.

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반응 결정화에 의한 실리카 미립자 합성에 관한 연구 (The Study on the Preparation of the Silica Particles by the Reactive Crystallization)

  • 김준호;이창환;이철호
    • 공업화학
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    • 제17권1호
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    • pp.12-15
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    • 2006
  • 본 연구의 목적은 물유리에 의해 제조된 실리카 미립자의 평균입도와 입도분포에 미치는 반응조건, 용매 및 계면활성제의 영향을 조사하는 것이다. 실리카 미립자는 다양한 종류의 계면활성제와 분산용매를 사용하는 에멀젼법에 의해 제조하였다. 계면활성제로는 비이온성인 Span 20, Span 40, Span 60 및 Span 80을 사용하였으며, 분산용매로는 알킬그룹인 n-Hexane, n-Heptane, iso-Octane 및 n-Decane을 사용하였다. 실험결과에 의하면 유화교반속도에 따른 실리카 미립자의 평균 입경은 교반속도가 증가함에 따라 감소하였으며, 일정한 입경의 에멀젼을 형성하기 위한 최적의 유화교반시간은 약 6 min임을 알 수 있었다. 생성된 실리카 미립자의 평균입경은 사용된 용매의 분자량이 증가함에 따라 감소하며, 사용한 계면활성제의 hydrophobic lipophilic balance(HLB) 값이 감소함에 따라 증가하였다.

Zr 계 벌크비정질합금의 마이크로 단조를 이용한 미세 성형성 평가와 유한요소해석 적용에 관한 연구 (A study on the micro-formability of $Zr_{62}Cu_{17}Ni_{13}Al_8$ bulk metallic glass using micro-forging and finite element method application)

  • 강성규;나영상;박규열;손선천;이종훈
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 추계학술대회 논문집
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    • pp.589-592
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    • 2005
  • Micro-forming is a suited technology to manufacture very small metallic parts(several $mm{\sim}{\mu}m$). Micro-forming of $Zr_{62}Cu_{17}Ni_{13}Al_8$ bulk metallic glass(BMG) as a candidate material for this developing process are feasible at a relatively low stress in the supercooled liquid state without any crystallization during hot deformation. In this study, micro-formability of a representative bulk metallic glass, $Zr_{62}Cu_{17}Ni_{13}Al_8$, was investigated for micro-forging of U-shape pattern. Micro-formability was estimated by comparing $R_f$ values $(=A_f/A_g)$, where Ag is cross-sectional area of U groove, and $A_f$ the filled area by material. Microforging process was simulated and analyzed by applying finite element method. FEM simulation results should reasonable agreement with the experimental results when the material properties and simulation conditions such as top die speed, remeshing criteria and boundary conditions tightly controlled. The micro-formability of $Zr_{62}Cu_{17}Ni_{13}Al_8$ was increased with increasing load and time in the temperature range of the supercooled liquid state. Also, FEM Simulation using DEFORM was confirmed to be applicable for the micro-forming process simulation.

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NH3를 이용한 반응성 증착법에 의한 AlN 박막의 우선배향특성에 관한 연구 (A Study on the Preferred Orientation Characteristics of AlN Thin Films by Reactive Evaporation Method using NH3)

  • 오창섭;한창석
    • 대한금속재료학회지
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    • 제50권1호
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    • pp.78-85
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    • 2012
  • Aluminum nitride(AlN) is a compound (III-V group) of hexagonal system with a crystal structure. Its Wurzite phase is a very wide band gap semiconductor material. It has not only a high thermal conductivity, a high electrical resistance, a high electrical insulating constant, a high breakdown voltage and an excellent mechanical strength but also stable thermal and chemical characteristics. This study is on the preferred orientation characteristics of AlN thin films by reactive evaporation using $NH_3$. We have manufactured an AlN thin film and then have checked the crystal structure and the preferred orientation by using an X-ray diffractometer and have also observed the microstructure with TEM and AlN chemical structure with FT-IR. We can manufacture an excellent AlN thin film by reactive evaporation using $NH_3$ under 873 K of substrate temperature. The AlN thin film growth is dependent on Al supplying and $NH_3$ has been found to be effective as a source of $N_2$. However, the nuclear structure of AlN did not occur randomly around the substrate a particle of the a-axis orientation in fast growth speed becomes an earlier crystal structure and is shown to have an a-axis preferred orientation. Therefore, reactive evaporation using $NH_3$ is not affected by provided $H_2$ amount and this can be an easy a-axis orientation method.

천연 항균 효소제 난백 lysozyme의 한외여과 조건 최적화 (Ultrafiltration and Separation Process Optimization of Hen Egg White Lysozyme as Natural Antimicrobial Enzyme)

  • 이은영;우건조
    • 한국식품과학회지
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    • 제30권2호
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    • pp.397-406
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    • 1998
  • 난백 lysozyme은 박테리아 세포벽을 선택적으로 분해하므로 식품 가공 공정에 있어서 천연 식품보존제로서의 이용 가치가 높다. 기존의 결정화와 냉동건조 방법 대신 PM30 막을 사용하여 한외여과함으로써 13종의 난백 단백질로부터 single-step에 의해 lysozyme을 분리하고자 하였다. 냉동 건조한 lysozyme을 pH 4.6 citrate-phosphate buffer에 녹여 PM30 막으로 한외여과시 시료 농도, 온도, 막 횡단 압력, 교반속도 등의 운용 조건을 변화시켜주면서 flux를 최대화하는 최적 막분리 조건을 구하였다. 최적 막 분리 조건하에서 시간이 경과함에 따라 막 재질과 막 침착이 flux에 미치는 효과를 측정하였고, 막 분리 여액내 단백질 농도와 lysozyme 농도, 비활성도를 측정하였다. PM30 막을 이용한 난백 lysozyme의 막 분리 최적 조건은 시료농도 0.25%, 온도 $35^{\circ}C$, 막 횡단 압력 30 psi, 교반속도 300 rpm 이었다. 막 분리 초기 12분까지는 YM30 막의 flux가 더 높았으나, 정상상태에서의 flux는 PM30 막이 더 높았다. PM30 막의 분리 여액내 단백질 농도와 lysozyme 농도는 YM30 막에 비해 낮았으나, 비활성도는 2배 이상 높았다. 5회 막 분리한 PM30 막은 새 PM30 막에 비하여 flux가 약 30% 감소하였으나 시간 경과에 따른 flux 감소 경향은 거의 동일하였으며, 막 분리 35분 경과 후 정상상태에 이르러 초기 flux 약 70%를 유지하였다. 막 분리 여액내 lysozyme 농도와 비활성도는 각각 110 units/mL, 2,821 units/mg protein이었으므로, PM30 막을 이용한 한외여과 공정은 천연 항균 효소제인 lysozyme을 분리하는데 매우 효과적인 방법이었다.

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급속응고에 의해 제조된 Fe-Nd-C 합금의 자기적 특성 (Magnetic Properties of Melt-spun Fe-Nd-C Alloys)

  • 장태석;임광윤;조대형
    • 한국재료학회지
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    • 제7권12호
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    • pp.1063-1069
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    • 1997
  • 급속응고법으로 Fe-Nd-C 합금을 제조하여 합금의 조성 및 제조 조건의 변화에 따른 상변화와 자기특성의 변화를 조사하였다. 강자성 $Fe_{14}Nd_2C_x$가 초정으로 정출할 수 있는지를 알아보기 위하여 냉각속도의 변화에 따른 as-spun 합금에서의 상변화를 조사해 본 결과,10m/s로 제조한 Fe-Nd-C 리본합금은 ${\alphs}-Fe$가 일차상, $Fe_{17}Nd_2C_x$가 이차상으로 존재하는 결정질이었으며. 20m/s에서는 ${\alpha}-Fe$의 정출이 억제되거나 비정질화하여, $Fe_{14}Nd_2C_x$가 일차상, ${\alpha}-Fe$가 이차상으로서 비정질상과 함께 존재하였다. 냉각속도의 증가에 따라 비정질화가 증가하여 30m/s에서는 대부분 비정질화되었으며,40m/s에서 비정질화가 완료되었다. 따라서 $Fe_{14}Nd_2C$는 as-spun 상태에서는 얻어지지 않고 주조합금의 경우와 마찬가지로 열처리를 통한 고상변태에 의해서만 얻을 수 있었다. $Fe_{14}Nd_2C$를 얻을 수 있는 유효온도구역은 주조합금의 경우보다 넓은 $700{\sim}900^{\circ}C$였고,비정질화가 완벽한 합금보다 다소 덜 완벽하거나 $Fe_{17}Nd_2C_x$와 비정질상이 혼합된 합금에서 열처리에 의한 보자력의 향상이 더욱 현저하였다. Fe를 다량 함유한 Fe-Nd-C 조성 중에서 높은 보자력이 기대되는 조성 범위는 극히 제한되어, $750{\sim}800^{\circ}C$에서 몇 분간의 열처리로 10kOe 이상의 높은 보자력을 얻을 수 있는 조성은 77~78 Fe, 7~8 C (at.%) 정도였다.

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다중준위 상변환 메모리를 위한 Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 구조의 전기적 특성 연구 (A Study on the Electrical Characteristics of Ge2Sb2Te5/Ti/W-Ge8Sb2Te11 Structure for Multi-Level Phase Change Memory)

  • 오우영;이현용
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.44-49
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    • 2022
  • In this paper, we investigated current (I)- and voltage (V)-sweeping properties in a double-stack structure, Ge2Sb2Te5/Ti/W-doped Ge8Sb2Te11, a candidate medium for applications to multilevel phase-change memory. 200-nm-thick and W-doped Ge2Sb2Te5 and W-doped Ge8Sb2Te11 films were deposited on p-type Si(100) substrate using magnetron sputtering system, and the sheet resistance was measured using 4 point-probe method. The sheet resistance of amorphous-phase W-doped Ge8Sb2Te11 film was about 1 order larger than that of Ge2Sb2Te5 film. The I- and V-sweeping properties were measured using sourcemeter, pulse generator, and digital multimeter. The speed of amorphous-to-multilevel crystallization was evaluated from a graph of resistance vs. pulse duration (t) at a fixed applied voltage (12 V). All the double-stack cells exhibited a two-step phase change process with the multilevel memory states of high-middle-low resistance (HR-MR-LR). In particular, the stable MR state is required to guarantee the reliability of the multilevel phase-change memory. For the Ge2Sb2Te5 (150 nm)/Ti (20 nm)/W-Ge8Sb2Te11 (50 nm), the phase transformations of HR→MR and MR→LR were observed at t<30ns and t<65ns, respectively. We believe that a high speed and stable multilevel phase-change memory can be optimized by the double-stack structure of proper Ge-Sb-Te films separated by a barrier metal (Ti).

IBC형 태양전지를 위한 균일하게 증착된 비정질 실리콘 층의 광섬유 레이저를 이용한 붕소 도핑 방법 (Boron Doping Method Using Fiber Laser Annealing of Uniformly Deposited Amorphous Silicon Layer for IBC Solar Cells)

  • 김성철;윤기찬;경도현;이영석;권태영;정우원;이준신
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.456-456
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    • 2009
  • Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

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