• ETRI Journal
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• v.19 no.1
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• pp.26-35
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• 1997

The substrate effects on solid-phase crystallization of amorphous silicon (a-Si) films deposited by low-pressure chemical vapor deposition (LPCVD) using $Si_2H_6$ gas have been extensively investigated. The a-Si films were prepared on various substrates, such as thermally oxidized Si wafer ($SiO_2$/Si), quartz and LPCVD-oxide, and annealed at 600$^{\circ}C$ in an $N_2$ ambient for crystallization. The crystallization behavior was found to be strongly dependent on the substrate even though all the silicon films were deposited in amorphous phase. It was first observed that crystallization in a-Si films deposited on the $SiO_2$/Si starts from the interface between the a-Si and the substrate, so called interface-interface-induced crystallization, while random nucleation process dominates on the other substrates. The different kinetics and mechanism of solid-phase crystallization is attributed to the structural disorderness of a-Si films, which is strongly affected by the surface roughness of the substrates.

• Journal of Magnetics
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• v.7 no.4
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• pp.143-146
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• 2002

Mechanical milling technique is considered to be a useful way of processing the fine Nd-Fe-B-type powder with high coercivity. In the present study, phase evolution of the $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ (x=0-0.6) alloys during the high energy mechanical milling and annealing was investigated. The effect of Co-substitution on the crystallization of the mechanically milled $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ amorphous material was examined. The Nd-Fe-B-type alloys can be amorphized completely by a high-energy mechanical milling. On annealing of the amorphous material, fine $\alpha$-Fe crystallites form first from the amorphous. These fine $\alpha$-Fe crystallites reacts with the remaining amorphous afterwards, leading to crystallization to $Nd_2Fe_{14}$B phase. The Co-substitution for Fe in $Nd_{15}(Fe_{1-x}Co_{x})_{77}B_{8}$ ($\mu$x=0∼0.6) alloys lower significantly the crystallization temperature of the amorphous phase to the $Nd_2Fe_{14}$B phase. The mechanically milled and annealed $Nd_{15}Fe_{77}B_8$ alloy without Co-substitution exhibits consistently better magnetic properties with respect to the alloys with Co-substitution.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 1999.02a
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• pp.51-53
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• 1999

The crystallization mechanism of an amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ phase were studied from the relations between crystallization and volume changes by dilatometry. Further, the effect of addition of CdO on the crystallization mechanism and superconductivity was discussed. The shrinkage of the amorphous $Bi_{2}$$Sr_{2}$$Ca_{2 x}$$Cd_{x}$$Cu_{3}$$O_{y}$ occurred with the crystallization of $Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase decrease with increasing CdO content with a minimum at x=0.4. Better superconductivity was obtained in the specimens formation less amount of the$Bi_{2}$$Sr_{2}$Cu$O_{6}$ phase during the crystallization process.

• Applied Microscopy
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• v.43 no.3
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• pp.127-131
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• 2013

The crystallization behavior in the $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$amorphous alloys has been investigated. As-quenched $Al_{87}Ni_3Y_{10}$ amorphous phase decomposes by simultaneous formation of Al and intermetallic phase at the first crystallization step, while as-quenched $Al_{88}Ni_3Y_9$ amorphous phase decomposes by forming Al nanocrystals in the amorphous matrix. The density of Al nanocrystals is extremely high and the size distribution is homogeneous. Such a microstructure can result from rapid explosion of the nucleation event in the amorphous matrix or growth of the preexisting nuclei embedded in the as-quenched amorphous matrix. The final equilibrium crystalline phases and their distribution at 873 K are exactly same in both $Al_{87}Ni_3Y_{10}$ and $Al_{88}Ni_3Y_9$ alloys.

• Journal of Mechanical Science and Technology
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• v.18 no.11
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• pp.2042-2048
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• 2004

A molecular dynamics study has been conducted on an external-force-field-induced isothermal crystallization process of amorphous structures as a new low-temperature athermal crystallization process. An external cyclic-force field with a dc bias is imposed on molecules selected randomly in an amorphous-phase of argon. Multiple peaks smoothed out in the radial distribution functions for amorphous states appear very clearly during the crystallization process that cannot be achieved otherwise. When the amorphous material is locally exposed to an external force field, crystallization starts and propagates from the interfacial region and crystallization growth rates can be estimated.

• Journal of the Korean institute of surface engineering
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• v.47 no.1
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.49-54
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• 1998

The effect of deposition paratmeters on the solid-phase crystallization of amorphous silicon films deposited by plasma-enhanced chemical vapor deposition has been investigated by x-ray diffraction. The amorphous silicon films were prepared on Si(100) wafers using SiH4 gas with and without H2 dilution at the substrate temperatures between 12$^{\circ}C$ and 38$0^{\circ}C$. The R. F. powers and the deposition pressures were also varied. After crystallizing at $600^{\circ}C$ for 24h, the films exhibited (111), (220), and (311) x-ray diffraction peaks. The (111) peak intensity increased as the substrate temperature decreased, and the H dilution suppressed the crystallization. Increasing R.F. powers within the limits of etching level and increasing deposition pressures also have enhanced the peak intensity. The peak intensity was closely related to the deposition rate, which may be an indirect indicator of structural disorder in amorphous silicon films. Our results are consistent with the fact that an increase of the structural disorder I amorphous silicon films enhances the grain size in the crystallized films.

• Journal of Information Display
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• v.10 no.3
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.

• Journal of Welding and Joining
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• v.17 no.4
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• pp.53-59
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• 1999

Amorphous alloys have also been called glassy alloys or non-crystalline alloys. They are made by the rapid solidification. The solidification occurs so rapid that the atoms are frozen in their liquid configuration. There are unique magnetic, mechanical, electrical and corrosive behaviors which result form their amorphous structure. In the study. amorphous coatings were manufactured with Ni-Cr-B-Si powders by flame spray. Measurement of hardness, were resistance, corrosion resistance and observation of microstructures and XRD, DSC were performed to investigate characteristics of amorphous coatings. The experimental results obtained as follow: 1) Amorphous powders could not be manufactured with the spraying in the spraying in the liquid nitrogen. But, amorphous coatings could be manufactured with the rotation cooling method by liquid nitrogen. In the fabrication of amorphous coatings, major factor was the rapid cooling by rotation of the substrate. 2) Hardness of coatings was obtained Hv 960 by formation of amorphous phase. But, wear resistance decreased. That was due to porosity in the coatings by the rapid cooling. 3) In the case of corrosion resistance, amorphous coatings were superior to air-cooled coatings. That was due to formation of amorphous phase. 4) After amorphous coatings were heat-treated at 520℃ for 1hr. hardness increased 80% and wear resistance increased 30% comparing with air cooled coatings. These were due to crystallization of amorphous phase and decrease of porosity by heat-treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.314-320
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• 1998

In this study, we have investigated crystallization properties of $Te_x(Sb_{85}Ge_{15})_{100-x}$ (x=0.3, 0.5, 1.0) thin films prepared by thermal evaporation. The change of reflectance according to phase change from amorphous to crystalline phases with annealing and exposure of diode laser is measured b the n&k analyzer and the surface morphology between amorphous and crystalline phase is analyzed by SEM and AFM. The difference in reflectance($\DeltaR$) between amorphous and crystalline phase appears approximately 20% at the diode laser wavelength, 780nm in all prepared films. Especially, the reflectance difference,$\DeltaR$ comes up to about 30% in $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ thin film. Also, amorphous-to-crystalline phase change is observed in all prepared films. As a result of the measurement of the reflectance using diode laser, the reflectance is increased in proportion to the laser power and exposure time in all films. As a result of observing each film with the SEM and AFM, the surface morphology of the annealed and the exposed films are evidently increased than those of as-deposited films. The fast crystallization is occurred by increasing in Te content. Therefore, we conclude that the $Te_{0.5}(Sb_{85}Ge_{15})_{99.5}$ and $Te_1(Sb_{85}Ge_{15})_{99}$ thin films can be evaluated as an attractive optical recording medium with high contast ratio and fast erasing time due to crystallization.