• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 한국표면공학회지
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• 제43권1호
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• 한국주조공학회지
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• 제3권3호
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• pp.159-166
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• 1983

In order to develope domestic carburizers, the experiment was carried out by applying crystallization heat treatment to domestic anthracites and also to foreign products to compare with domestic anthracites.The present work was mainly concerned with the effect of their degree of crystallization of carbon-bearing materials on carbon pick-up in molten iron.Those effects were evaluated by the measurement of density, chemical composition, specific electric resistivity, and X-ray intensity of carbon-bearing materials. Experimental results thus obtained were summurized as follows. 1. The degree of crystallization of domestic anthracites and foreign products was increased with increasing heat treatment temperature. 2. The more degree of crystallization, the shorter the dissolving time of domestic anthracites in molten iron was obtained, while that of foreign products was remained constant. 3. As the degree of crystallization of domestic anthracites and foreign products was increased, the carbon content as well as carbon recovery in molten iron was increased.

• 한국세라믹학회지
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• 제50권1호
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• pp.70-74
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• 2013

Dependence of microwave dielectric properties on the crystallization behaviors of $CaMgSi_2O_6$ (diopside) glass-ceramics was investigated with different heat treatment methods (one and/or two-step). The crystallization behaviors of the specimens, crystallite size and degree of crystallization, were evaluated by differential thermal analysis (DTA), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis by combined Rietveld and reference intensity ratio (RIR) methods. With an increase in heattreatment temperature, the dielectric constant (K) and the quality factor (Qf) increased due to the increase of the crystallite size and degree of crystallization. The specimens heat-treated by the two-step method had a higher degree of crystallization than the specimens heat-treated by the one-step method, which induced improvement in the quality factor (Qf) of the specimens.

• 한국세라믹학회지
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• 제37권2호
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• pp.181-185
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• 2000

A new technique capable of accelerating the crystallization of ferrite powder at low temperature is developed. Effects of the ultrasonic waves on the crystallization were studied for ferrite powders prepared using the co-precipitation method. The crystallization of the ferrite powders exposed to the ultrasonic waves were characterized by the XRD. The amorphous ferrite powders prepared using the co-precipitation method were crystallized as a result of the exposure to the ultrasonic waves for 5h and the crystallization of the ferrite powders became more enhanced in proportion to the time exposed. The ferrite powder exposed to the ultrasonic waves for 25h had higher crystallinity a larger specific surface area than the ferrite powder calcined at 500$^{\circ}C$ for 2h.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• 한국진공학회지
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• 제12권2호
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• pp.130-135
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• 2003

최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다.

• 분석과학
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• 제12권5호
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• pp.436-440
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• 1999

축중합조에 제전제를 첨가하여 중합한 폴리에틸렌테레프탈레이트(PET)의 제전성과 결정화 거동에 대하여 연구하였다. 제전제 성분중 폴리에틸렌글리콜(PEG) 성분에 의해 제전 PET의 유리전이온도와 용융 온도가 낮아졌다. 제전PET의 결정화속도는 결정화온도가 감소함에 따라 억제되었다. 제전PET의 열적성질과 결정화 거동은 제전제 성분중 알킬나트륨설포네이트 보다는 PEG 함량에 영향을 받았다. 따라서 제전성은 발현하는 주요 성분은 PEG였다. 알킬나트륨설포네이트는 제전폴리에스터 폴리머의 용융점도를 향상시키는 역할을 하는 것으로 판단된다.

• 대한의용생체공학회:의공학회지
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• 제16권1호
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• pp.9-16
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• 1995

Biodegradable poly (I ,4-butanediol succinate) (PBS) was synthesized from 1,4-butanediol and succinic anhydride. The glass transition temperature of poly (I, 4-butanediol succinate) was revealed at $73^{\circ}C$. The crystallization and cold crystallization of the polymers were investigated as a function of holding time in melt state, cooling rate. reheating, and molecular weight. Chain scission and/or cmsslinking did not occur in the melt state at var.ious holding times. Slower scanning rate can allow more times for nucleation, rearrangement, and packing of the polymer chain, so the onset temperature of crystallization from the melt was increased. PBS crystallized from the melt was found to have spherulitic structure. The degradation behavior of PBS was studied under basic conditions and with microorganisms using the modified ASTM method. In the basic solution. PBS lost up to 85% of its mass within two days. Based upon visual observation, the crystalline structure of films composed of larger molecular weight polymers retained their crystallinity longer than similar structures in low molecular weight samples.

• Macromolecular Research
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• 제14권2호
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• pp.146-154
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• 2006

Organic and inorganic hybrid nanocomposites based on poly(ethylene 2,6-naphthalate) (PEN) and silica nanoparticles were prepared by a melt blending process. In particular, polymer nanocomposites consisting mostly of cheap conventional polyesters with very small quantities of inorganic nanoparticles are of great interest from an industrial perspective. The crystallization behavior of PEN/silica hybrid nanocomposites depended significantly on silica content and crystallization temperature. The activation energy of crystallization for PEN/silica hybrid nanocomposites was decreased by incorporating a small quantity of silica nanoparticles. Double melting behavior was observed in PEN/silica hybrid nanocomposites, and the equilibrium melting temperature decreased with increasing silica content. The fold surface free energy of PEN/silica hybrid nanocomposites decreased with increasing silica content. The work of chain folding (q) for PEN was estimated as $7.28{\times}10^{-20}J$ per molecular chain fold, while the q values for the PEN/silica 0.9 hybrid nanocomposite was $3.71{\times}10^{-20}J$, implying that the incorporation of silica nanoparticles lowers the work required to fold the polymer chains.