• Journal of the Korean Ceramic Society
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• v.30 no.3
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• pp.236-242
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• 1993

As the fundamental research on preparation of fine single crystalline ferroxaplana by means of glass-crystallization methods using steel twin-roller, the properties of ferroxplana crystallized from glass were studied. Most of the specimens quenched by twin-roller at about 130$0^{\circ}C$ were glass phase, the crystallization of these glasses underwent multi-steps and ferroxplana phase was only stable in the temperature range of 88$0^{\circ}C$ to 95$0^{\circ}C$. Above 95$0^{\circ}C$ ferroxplana begines to be decomposed in glass. Ferroxplana had such magnetic properties as M8=29emu/g, MHC=166Oe, and Curie Temperature, Tc=610$\pm$5K.

• The Korean Journal of Ceramics
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• v.1 no.2
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• pp.75-80
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• 1995

Development of phases, evolution of microstructures, and dielectric response characteristics of amorphous lead iron tungstates during crystabllization were investiageted. A series of mircographs showing the evolution sequence of microstructures is presented. Crystallization was observed to initiate from inside of the amorphous material. A cubic perovskite phase developed fully at $760^{\circ}C$ from amorphous state via intermediate metastable crystalline structures. Dielectric constant of amorphous PFM was totally insensitive to the temperature change around the Curie temperature of crystalline material. Sintered pellet, with relative density of 96% and an almost pore-free dense internal microstructure, could be prepared from amorphous powder.

• Transactions on Electrical and Electronic Materials
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• v.11 no.5
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• pp.234-237
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• 2010

Nanoenergetic materials were synthesized and the thermite reaction between the CuO nanowires and the deposited nano-Al by Joule heating was studied. CuO nanowires were grown by thermal annealing on a glass substrate. To produce nanoenergetic materials, nano-Al was deposited on the top surface of CuO nanowires. The temperature of the first exothermic reaction peak occurred at approximately $600^{\circ}C$. The released heat energy calculated from the first exothermic reaction peak in differential scanning calorimetry, was approximately 1,178 J/g. The combustion of the nanoenergetic materials resulted in a bright flash of light with an adiabatic frame temperature potentially greater than $2,000^{\circ}C$. This thermite reaction might be utilized to achieve a highly reliable selective area crystallization of amorphous silicon films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Journal of the Korean Ceramic Society
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• v.27 no.4
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• pp.521-528
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• 1990

Li2O.2SiO2 glass-ceramics were made from the melt by the nucleation and growth treatment. The optimum nucleation temperature and time were determined from DTA curves of as-quenched and thermally treated glasses, and found to be 44$0^{\circ}C$ and 3hrs. The optical microscopic technique was also used to support this result. The volume fractions of crystals present in the partially crystallized specimens were measured using the optical microscopy and the amorphous X-ray scattering methods. The degree of crystallization increased with increasing the crystallization temperature and time. The crystalline phase identified by X-ray diffraction was lithium disilicate. As the crystallinity increased up to 95%, the transmittance of glass-ceramics was decreased linearly. It was also found that for the same heat treatment condition (575$^{\circ}C$, 30min), a thicker specimen showed higher transmittance, presumably due to less crystallinity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Macromolecular Research
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• v.10 no.3
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• pp.145-149
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• 2002

Transesterification between poly(trimethylene terephthalate) (PTT) and bisphenol-A-polycarbonate (PC) is studied by differential scanning calorimetry (DSC) and nuclear magnetic resonance (NMR) spectroscopy. When the blend of PTT/PC is annealed at higher temperatures, the samples do not show any melting peak at an initial stage, indicating the samples completely lose their crystallinity due to the formation of random copolymers. However, when the random copolymer is annealed at temperatures lower than the melting temperature of PTT, a melting peak is observed, indicating that the random copolymers are sequentially reordered. The melting point and the heat of fusion of crystals formed from the crystallization-induced sequential reordering depend upon the annealing temperature and time. The average sequence length determined from NMR is increased as the blocks are regenerated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.263-266
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• 2000

Effects of excess Pb(50 mole ％) on the crystallization properties of amorphous PZT thin films on the glass substrates by post-annealing in oxygen ambient were investigated to lower the crystallization temperature of the PZT thin films with a single perovskite phase. The PZT thin films(350nm) were prepared on Pt/Ti/corning glass(1737) substrates. The PZT thin films and bottom electrode were deposited by RF magnetron sputtering. Crystallization properties of PZT thin films were strongly dependent on RTA(Rapid Thermal Annealing) temperature. We were able to obtain a perovskite structure of PZT at 600$^{\circ}C$ for 10min. After thermal treatments were done, electrical properties such as I-V, P-E, and fatigue were measured.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.39-43
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• 1997

Effects of B$_2$O$_3$ addition in the Li$_2$O-MgO-MgF$_2$-SiO$_2$g1ass system were investigated in order to make glass-ceramics for low temperature firing substrate. Base glass was made by melting at 145$0^{\circ}C$ . This glass was analyzed by THA and DTA to settle nucleation and crystallization temperature. After crystallization. crystal phase and microstructure were absorvated by XRD and SEM. Glass powders were made by water swelling method. Average particle size was 5.44${\mu}{\textrm}{m}$

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.3
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• pp.221-228
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• 2011

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.