Transactions of the Korean Society of Mechanical Engineers B (대한기계학회논문집B)

The Korean Society of Mechanical Engineers (대한기계학회)
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Thermal Investigation of Joule-Heating-Induced Crystallization of Amorphous Silicon Thin Film

비정질 실리콘의 결정화를 위한 줄 가열 유도 결정화 공정에 대한 열적 연구

  • Kim, Dong-Hyun (Graduate Student, Dept. of Mechanical Engineering, Hongik Univ.) ;
  • Park, Seung-Ho (Dept. of Mechanical and System Design Engineering, Hongik Univ.) ;
  • Hong, Won-Eui (Dept. of Material Science and Engineering, Hongik Univ.) ;
  • Ro, Jae-Sang (Dept. of Material Science and Engineering, Hongik Univ.)
  • 김동현 (홍익대학교 대학원 기계공학과) ;
  • 박승호 (홍익대학교 기계시스템디자인공학과) ;
  • 홍원의 (홍익대학교 신소재공학과) ;
  • 노재상 (홍익대학교 신소재공학과)
  • Received : 2010.05.26
  • Accepted : 2010.12.14
  • Published : 2011.03.01
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Abstract

The large-area crystallization of amorphous silicon thin films on glass backplanes is one of the key technologies in the manufacture of flat-panel displays. Joule-heating induced crystallization (JIC) is a recently introduced crystallization technology. It is considered a highly promising technique for fabricating OLEDs, because the film of amorphous silicon on glass can be crystallized in tens of microseconds, minimizing thermal and structural damage to the glass. In this study, we theoretically and experimentally investigated the temperature variation during the phase transformation. The critical temperatures for crystallization were determined for both solid-solid and solid-liquidsolid transitions, by carrying out in-situ temperature measurements and numerical analysis of the JIC.

대면적 비정질 실리콘 박막의 결정화는 평판 디스플레이 생산에 있어서 핵심 요소로 꼽힌다. 현재 다양한 결정화 기술들이 연구 되고 있으며 그 중 최근에 소개된 줄 가열 유도 결정화는 수십 마이크로초의 짧은 공정 시간, 대면적 결정화 그리고 국부적인 가열로 기판의 열변형 억제 등의 잇점으로 인해 AMOLED 제작에 있어서 기대되는 기술이다. 본 연구에서는 JIC 공정 중 상변화과정에서의 온도를 이론적으로 해석하고 이를 실험과 비교하였다. 이를 통하여 결정화 메커니즘을 결정하는 임계온도를 in-situ 실험과 수치해석을 통해 밝혀내었다.

Keywords

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