• 한국재료학회지
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• 제13권11호
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• pp.721-724
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• 2003

A Fe-Si-B-Ni amorphous alloy manufactured by one roll melt-spinning method showed the crystallization temperature difference of a maximum $10^{\circ}C$ according to each lot. This temperature difference had a considerable influence on the annealing process to be conducted for obtaining the proper inductance of the alloy. The proper annealing temperature of the alloy was $480^{\circ}C$ and the annealing time increased as the crystallization temperature increased. The activation energy measured by Kissinger method increased as the crystallization temperature increased. Therefore, the annealing process must be adjusted by the crystallization temperature difference of the amorphous alloy.

• Elastomers and Composites
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• 제51권1호
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• pp.56-62
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• 2016

The isothermal crystallization behaviors of blends of poly(ethylene naphthalate) (PEN) and a thermotropic liquid crystalline polymer (TLCP) were investigated by differential scanning calorimetry (DSC) as functions of crystallization temperature and blend composition. Avrami analyses were applied to obtain information on the crystal growth geometry and the factors controlling the rate of crystallization. The crystallization kinetics of the PEN/TLCP blends followed the Avrami equation up to a high degree of crystallization, regardless of crystallization temperature. The calculated Avrami exponents for PEN/TLCP revealed three-dimensional growth of the crystalline region in each blend. The crystallization rate of each blend increased as the crystallization temperature decreased, and decreased as the TLCP content increased. The crystallization of PEN in the blend was affected by the addition of TLCP, which acts as a nucleating agent.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 춘계학술대회
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• pp.1518-1523
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• 2003

The objective of the present work is to investigate an effect on the solution crystallization temperature difference and the cooling capacity of the absorption chiller by a solution cooler in the absorber. The cooling capacity of the absorption chiller can be higher, with the enhanced performance of the solution heat exchangers. But, because the solution crystallization temperature difference becomes smaller at the absorber inlet, the heat capacity of the solution heat exchangers might be limited by the danger of crystallization, which can cause the serious damages. In this paper, the heat capacity ratio of the solution cooler is defined as the ratio of the heat capacity of the solution cooler to that of the absorber. If it becomes larger in the additional type solution cooler, the solution crystallization temperature difference is augmented and the cooling capacity is also increased.

• 지식경영연구
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• 제12권1호
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• pp.39-52
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• 2011

Many LCD manufacturers continue to develop the technologies of LCD manufacturing processes for the reduction of production cost, power consumption and high-resolution. The LTPS (Low Temperature Polycrystalline Silicon) crystallization technology is important for rearranging the internal structure of liquid crystal grain by adding certain energy to amorphous silicon and turning it into poly-silicon in order to manufacture LCD with better performance. We consider 14 existing technologies of LTPS crystallization in the LCD manufacturing and present an intelligent analysis methodology using patent map and AHP (Analytic Hierarchy Process) analysis for determining an optimal LTPS crystallization technology. By using patent map analysis, we easily understand the development process and mega-trend of LTPS crystallization technologies and their relationship. By using AHP analysis, we evaluate 14 LTPS technologies. Through the use of proposed methodology, we determine the Continuous Wave Laser Lateral Crystallization technology as an optimal one.

• 폴리머
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• 제31권5호
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• pp.385-392
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• 2007

Poly (N-vinylpyrrolidone) (PVP) groups were grafted onto a poly(3-hydroxybutyrate-co-3-hydroryvalerate) (PHBV) backbone in order to modify its properties and synthesize a novel biocompatible copolymer. The crystallization behavior of PHBV and grafted PHBV was investigated by differential scanning calorimetry (DSC) and polarized optical microscopy (POM). During the cooling-induced crystallization process, the crystallization temperature and the crystallization rate of the grafted PHBV decreased with increasing PVP weight fraction. On the heating scans of all grafted PHBV samples, a new crystallization exothermic peak appeared at almost the same temperature, suggesting the operation of a recrystallization process, while the melting temperature ($T_m$) and the apparent enthalpy of fusion (${\Delta}H_f$) were not affected by graft modification. During the isothermal crystallization process at the same temperature, the presence of side PVP groups decreased the spherulitic growth rate and the spherulitic band spacing with increasing PVP weight fraction in samples.

• 한국세라믹학회지
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• 제24권4호
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• pp.364-368
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• 1987

The Si5AION7 specimens containing 20% YAG composition have been sintered and then heat treated to induce the crystallization of the matrix glassy phase. Crystallization of YAG phase during the heat treatment was detected from the X-ray diffraction patterns and the consequent changes in room temperature toughness as well as in microstructures were investigated. Almost all the glassy boundary phase were found to crystallize even after 5 minutes of heat treatment and the KC at room temperature decreased accordingly. The results show that the matrix crystallization can be induced by slow cooling from the sintering temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.177-180
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• 2002

Microwave has been utilized for low-temperature crystallization of amorphous Si films. Microwave annealing lowered the crystallization temperature and shortened the annealing time. The combination of Ni and microwave applications on a-Si films further enhanced the crystallization. The enhancement was due to both reduced nucleation activation energy and growth activation energy.

• 반도체디스플레이기술학회지
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• 제6권2호
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• pp.15-18
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• 2007

Effects of $O_2$ flow during deposition on Si crystallization at low substrate temperature were studied. Silicon thin films were prepared on $SiO_2$ substrates in a low-pressure chemical vapor deposition chamber using a mixture of $SiH_4$ and $H_2$. In some cases $O_2$ was intentionally introduced during deposition. Growth of poly silicon was observed at the substrate temperature as low as $480^{\circ}C$ when $O_2$ was flowed during deposition implying that crystallization of Si was enhanced by $O_2$ flow. On the other hand, $O_2$ flow did not show any significant effects at higher substrate temperature, where deposition rate is relatively fast. Enhancement mechanism of Si crystallization by $O_2$ flow was suggested from these results.

• 한국세라믹학회지
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• 제22권3호
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• pp.53-59
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• 1985

Nucleation and crystallization of $\beta$-eucryptite in a glass of molecular percentage composition Li2O.Al2O3.2SiO2 are studied. The glasses are made by quenching of the melts from 143$0^{\circ}C$ to room temperature. Heat-treatment for nucleation and crystal growth are caried out at various temperature in the range between 50$0^{\circ}C$ and 80$0^{\circ}C$ with different duration of time. The amounts of crystallization are estimated by the method of x-ray powder diffraction. As the results a time-temperature-transformation relation for crystallization is derived. The maximum rate of crystallization is observed at about 75$0^{\circ}C$ from the T-T-T-curve while the crystallization temperature is detected at 67$0^{\circ}C$ by DTA measurement. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percents of TiO2 and it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5. The crystallization temperature moved to 62$0^{\circ}C$ by adding 5 weight percent of TiO2 it moved to 78$0^{\circ}C$ by adding 2 weight percents of V2O5 The activation energy for crystallization from the pure glass is calculated as 68 Kcal/mol and it varied to 53 Kcal/mol and 110Kcal/mol when 5 weight percents of TiO2 and weight percents of V2O5 are added respectively.

• 한국표면공학회지
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• 제47권1호
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• pp.20-24
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• 2014

Joule heat is generated by applying an electric filed to a conductive layer located beneath or above the amorphous silicon film, and is used to raise the temperature of the silicon film to crystallization temperature. An electric field was applied to an indium tin oxide (ITO) conductive layer to induce Joule heating in order to carry out the crystallization of amorphous silicon. Polycrystalline silicon was produced within the range of a millisecond. To investigate the kinetics of Joule-heating induced crystallization (JIC) solid phase crystallization was conducted using amorphous silicon films deposited by plasma enhanced chemical vapor deposition and using tube furnace in nitrogen ambient. Microscopic and macroscopic uniformity of crystallinity of JIC poly-Si was measured to have better uniformity compared to that of poly-Si produced by other methods such as metal induced crystallization and Excimer laser crystallization.