• 한국분말재료학회지
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• 제25권1호
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• pp.54-59
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• 2018

Sb-doped $SnO_2$ (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance ($12.60{\pm}0.21{\Omega}/{\square}$ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value ($9.44{\pm}0.17{\times}10^{-3}{\Omega}^{-1}$). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.296-296
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• 2007

Ferroelectric neodymium-substituted $Bi_4Ti_3O_{12}$(BTO) thin films have been successfully deposited on Pt/Ti/$SiO_2$/Si substrate by a sol-gel spin-coating process and the effect of crystallization temperature on their microstructure and ferroelectric properties were studied systematically. $Bi(TMHD)_3$, $Nd(TMHD)_3$, $Ti(O^iPr)_4$ were used as the precursors, which were dissolved in 2-methoxyethanol. The thin films were annealed at various temperatures from 600 to $720^{\circ}C$ in oxygen ambient for 1 hr, which was followed by post-annealed for 1 hr after depositing a Pt electrode to enhance the electrical properties. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to analyze the crystallinity and surface morphology of layered perovskite phase, respectively. The crystallinity of the BNT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The polarization values of the films were a monotonous function of the crystallization temperature. The remanent polarization value of the BNT thin films annealed at $720^{\circ}C$ was $24.82\;{\mu}C/cm^2$ at an applied voltage of 5 V.

• 한국의류학회지
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• 제47권3호
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• pp.577-592
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• 2023

In this study, nanofiber-based textile sensors were developed for motion detection and monitoring. Poly(vinylidene fluoride) (PVDF) nanofibers containing zinc oxide (ZnO) nanoparticles and silver nanowires (AgNW) were fabricated using electrospinning. PVDF was chosen as a piezoelectric polymer, zinc oxide as a piezoelectric ceramic, and AgNW as a metal to improve electric conductivity. The PVDF/ZnO/AgNW nanocomposite fibers were used to develop a textile sensor, which was then incorporated into an elbow band to develop a wearable smart band. Changes in the output voltage and peak-to-peak voltage (V_p-p) generated by the joint's flexion and extension were investigated using a dummy elbow. The β-phase crystallinity of pure PVDF nanofibers was 58% when analyzed using Fourier transform infrared spectroscopy; however, the β-phase crystallinity increased to 70% in PVDF nanofibers containing ZnO and to 78% in PVDF nanocomposite fibers containing both ZnO and AgNW. The textile sensor's output voltage values varied with joint-bending angle; upon increasing the joint angle from 45° to 90° to 150°, the V_p-p value increased from 0.321 V_p-p to 0.542 V_p-p to 0.660 V_p-p respectively. This suggests that the textile sensor can be used to detect and monitor body movements.

• 한국염색가공학회지
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• 제13권5호
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• pp.1-1
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• 2001

As the basic study to investigate the mechanism of improvement in the dyeing fastness of natural dyes on silk fabrics the optical behavior of tannin solution, the optimal condition of tannin treatment and the changes of the physical structure of silk fabrics were studied in the treatment of tannin. Results obtained were as follows ; 1.The K/S values of tannin-treated silk fabrics were not changed by tannin content on silk fabrics but yellowing of tannin in treatment condition. 2. As the concentration of tannin was increased in its treating condition, the tannin content and K/S vague of tannin-treated silk fabrics were increased. 3. Because tannin gave rise to yellowing by hydrolysis and oxidation at high temperature, the higher tannin-treating temperature was, the lower the tannin content and K/S values of silk fabrics 4. The tannin content of silk fabric was higher in acidic treating condition and the highest K/S value was showed at pH 5. 5. As the tannin content of silk fabric was increased, the value of ζ -potential of it became negative. 6. As the tannin content of silk fabric was increased, the crystallinity and crystallite size of it were decreased. This meant that the fraction of amorphous region in the fibers increased. And the degree of orientation of it was decreased with the tannin treatment.

• 한국염색가공학회지
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• 제13권5호
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• pp.289-297
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• 2001

As the basic study to investigate the mechanism of improvement in the dyeing fastness of natural dyes on silk fabrics the optical behavior of tannin solution, the optimal condition of tannin treatment and the changes of the physical structure of silk fabrics were studied in the treatment of tannin. Results obtained were as follows ; 1 The K/S values of tannin-treated silk fabrics were not changed by tannin content on silk fabrics but yellowing of tannin in treatment condition. 2. As the concentration of tannin was increased in its treating condition, the tannin content and K/S vague of tannin-treated silk fabrics were increased. 3. Because tannin gave rise to yellowing by hydrolysis and oxidation at high temperature, the higher tannin-treating temperature was, the lower the tannin content and K/S values of silk fabrics 4. The tannin content of silk fabric was higher in acidic treating condition and the highest K/S value was showed at pH 5. 5. As the tannin content of silk fabric was increased, the value of $\xi$ -potential of it became negative. 6. As the tannin content of silk fabric was increased, the crystallinity and crystallite size of it were decreased. This meant that the fraction of amorphous region in the fibers increased. And the degree of orientation of it was decreased with the tannin treatment.

• Journal of Electrical Engineering and Technology
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• 제1권1호
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• pp.120-126
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• 2006

Ferroelectric materials have been widely investigated for high density dynamic random access memories, opto-electrics, and tunable microwave devices due to their properties. In this study, we have investigated the dielectric properties of Ti doped $K(Ta,\;Nb)O_3$ thin films. By doping Ti Into the $K(Ta,Nb)O_3$ system, Ti with a valence value of +4 will substitute Ta or Nb ions with a valence value of +5. This substitution will introduce an acceptor state. Therefore, this introduced acceptor state will reduce dielectric loss by trapping electrons. Using 3% Ti-doped $K(Ta,Nb)O_3\;targets,\;K(Ta,Nb)O_3$:Ti films were grown in MgO(001) crystals using pulsed laser deposition. First, growth conditions were optimized. A reduction in the loss tangent was observed for Ti-doped $K(Ta,Nb)O_3$ relative to undoped films, although a reduction in tunability is also seen. The crystallinity, morphology, and tunability of $K(Ta,Nb)O_3$:Ti films are reported.

• 한국표면공학회지
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• 제47권4호
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• pp.174-180
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• 2014

In this study, TiAlSiN coatings have been successfully synthesized on stainless steel and tungsten carbide substrate by a hybrid coating method employing a cathodic arc and a magnetron sputtering source. TiAl and Si target were vaporized with the cathodic arc source and the magnetron sputtering source, respectively. Process gas was the mixture of nitrogen and argon gas. With the increase of Si content, the crystallinity and the grain size of TiAlSiN film was decreased. At the Si content of more than 8 at.%, grain size of TiAlSiN was saturated at around 2 nm. The hardness value of the TiAlSiN film increased with incorporation of Si, and had the maximum value of ~ 3,233 Hv at the Si content of 9.2 at.%. The oxidation resistance of TiAlSiN film was enhanced with the increase of Si content.

• 한국세라믹학회지
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• 제28권1호
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• pp.46-52
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• 1991

The hydroxyapatite powders were prepared by the reaction of Ca(CH3COO)2$.$H2O and H3PO4 in aqueous solution. Effect of Ca/P mole ration and pH value on the powder characteristics were investigated. For phosphoric acid was dissociated to PO43- ion above pH 10, the preparation condition of hydroxyapatite by H3PO4 solution had this value. Dried powders were agglomerated each other. The mean agglomerate particle diameter was minimum when the condition was pH 11, Ca/P=1.75 and its specific surface area was 97㎡/g. All powders had poor crystallinity and small CO2. It prevented CaCO3 from using aspirator in preparation and maturing time. In most cases, hydroxyapatite was decomposed into ${\beta}$-TCP at more than 800$^{\circ}C$, into ${\alpha}$-TCP at 1200$^{\circ}C$. However non-decomposed hydroxyapatite was remained in Ca/P=1.85.

• Applied Biological Chemistry
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• 제35권5호
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• pp.389-394
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• 1992

건열$(130{\sim}220^{\circ}C)$ 처리가 옥수수 전분의 성질에 미치는 영향을 조사하였다. 표면 색도의 경우 L값과 a값은 큰 차이가 없었으나 b값은 열처리에 따라 약간 감소하였다. Blue value는 $190^{\circ}C$ 이상에서 약간 증가하였고 물결합능력은 열처리 온도의 상승에 따라 증가하였다. 팽윤력은 시료간에 큰 차이가 없으나 $90^{\circ}C$에서의 팽윤력은 $190^{\circ}C$ 이상의 시료에서 약간 감소하였고 용해도는 $190^{\circ}C$ 이상에서 증가하였다. $190^{\circ}C$ 이상에서 고유점도의 상당한 감소, 전분결정도의 감소, 산 또는 효소에 의한 가수분해율의 뚜렷한 증가경향을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제14권2호
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• pp.90-93
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• 2013

Al:ZnO thin films were deposited using the radio frequency magnetron sputtering technique at various temperatures and sputtering powers. With the increase in the deposition temperature and the decrease in the radio frequency sputtering power, the crystallinity was increased and the surface roughness was decreased, which lead to the decrease in the electrical resistivity of the film. It is also clearly observed that, the intensity of the (002) XRD peak increases with increasing the substrate temperature [1,2]. The electrical resistivity and optical transmittance of the Al:ZnO thin film were analyzed as a function of the post-annealing temperature. It can be seen that with the annealing temperature set at $400^{\circ}C$, the resistivity decreases to a minimum value of $4.1{\times}10^{-3}{\Omega}cm$ and the transmittance increases to a maximum value of 85% of the Al:ZnO thin film.