• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1991.10a
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• pp.3-6
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• 1991

CuInSe$_2$ films have been prepared by selenium vapor annealing of sputtered Cu/In layer. The properties of selenized CuInSe$_2$films have been studied as a function of selenization temperature for two sputtered thicknesses. A large indium loss occurs in the sputtered Cu/In layer during the selenization. The indium loss with the selenization temperature is confirmed by the increase in the amount of CuxSe phase at lower temperature and the decrease in the crystallinity of chalocpyrite CuInSe$_2$phase at higher temperature. The variations of the electrical properties in the selenized films with the selenization conditions are due primarily to the variation of hole concentration. The variation of the hole concentration can be explanined by the indium loss away the sputtered Cu/In layer.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.66 no.10
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• pp.1488-1493
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• 2017

Boron-doped ZnO:Al films were deposited by rf magnetron sputtering. The structural and optical property variations of the films with the boron amounts were studied. ZnO nanorods were grown on $SiO_2/Si$ wafers and glass by a hydrothermal method. ~50 nm-thick boron-doped ZnO:Al films were deposited on the substrates as seed layers. The mixed solution of zinc nitrate hexahydrate and hexamethylenetetramine in DI water was used as a precursor for ZnO nanorods. The concentration of zinc nitrate hexahydrate and that of hexamethylenetetramine were 0.05 mol, respectively. ZnO nanorods were grown at $90^{\circ}C$ for 2 hours. X-ray diffraction was conducted to observe the crystallinity of ZnO nanorods. A field emission scanning electron microscope was employed to study the morphology of nanorods. Optical transmittance was measured by a UV-Vis spectrophotometer, and photoluminescence was carried out with 266 nm light. The ZnO nanorods grown on the 0.5 wt% boron-doped ZnO seed layer showed the best crystallinity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.3
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• pp.393-399
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• 1997

H-SiC single crystals were successfully grown by the sublimation method and the optimum growth conditions were established. The grown SiC crystals were about 33 mm in diameter and 11 mm in length. The micropipe density of the polished SiC wafers was 400/$\textrm{cm}^2$, and the planar defect density was 50/$\textrm{cm}^2$. Raman spectroscopy and DCXRD analysis were used to examine the crystallinity of Acheson seeds and the 6H-SiC wafers. As a result, the crystallinity of the 6H-SiC wafers was better than that of Acheson seeds. For examination of the electrical properties of the undopped 6H-SiC wafers Hall measurements were applied. According to the measurements the carrier concentration was estimated to be $3.91{\times}10^{15}/\textrm {cm}^3$ and doping type of the undopped. 6H-SiC wafers was n-type.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.3
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• pp.177-181
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• 2011

We have studied structural, optical, and electrical properties of the Al-doped ZnO (AZO) thin films being usable in transparent conducting oxides. The AZO thin films were deposited on the corning 1737 glass plate by the RF magnetron sputtering system. To find optimal properties of AZO for transparent conducting oxides, the RF power in sputtering process was varied as 40 W, 60 W, and 80 W, respectively. As RF power increased, the crystallinity of AZO thin film was decreased, the optical bandgap of AZO thin film increased. The transmittance of the film was over 80% in the visible light range regardless of the changes in RF power. The measurement of Hall effect characterizes the whole thin film as n-type, and the electrical property was improved with increasing RF power. The structural, optical, and electrical properties of the AZO thin films were affected by Al dopant content in AZO thin film.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.120-121
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• 2004

YBaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The growth temperature to obtain the thick films was decreased by around 150$^{\circ}C$ due to plasma enhancement. The zero resistivity temperatures for films grown at 590$^{\circ}C$ and 620$^{\circ}C$ were 55 and 80 K, respectively.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.158-160
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• 2004

BiSrCaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The superconductivity was achieved at 20 K with an onset temperature of around 90 K in the film prepared at 72$0^{\circ}C$. From X ray diffraction analysis, the main superconducting phase in the films was the low Tc phase at 700∼75$0^{\circ}C$ and the high Tc phase at 750 ∼ 80$0^{\circ}C$.

• Journal of the Korean Society of Safety
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• v.17 no.4
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• pp.101-109
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• 2002

The electrical properties of polyethylene are changed by the superstructure. Such crystalline polymer as polyethylene or polypropylene changes crystallinity and products spherulite or trans-crystal when it is cooled slowly. In this study, after thermal treatment of LDPE at 100[${circ}C$], in silicone oil for an hour, we made specimens in order of slow cooling, water cooling, quenching according to cooling speed. Also, to study the influence of electrical properties due to the superstructure change, we analyzed physical properties and performed dielectric breakdown experiments using DC and impulse voltage Moreover we measured space charges in bulk using Laser Induced Pressure Pulse(LIPP) method. Trap level of specimen is 0.064[eV] at the low temperature region 0.31[eV] at the high temperature region in DC dielectric strength, 0.03[eV] at the low temperature region 0.0925[eV] at the high temperature region in impulse dielectric strength. As its result shows that the quantity of charges induced from the electrode surface increases with applied voltage time, and the distribution of space charges in samples increases the quantity of charges in proportion to applied voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.3
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• pp.235-238
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• 2009

This paper describes the mechanical properties of poly (Polycrystalline) 3C-SiC thin films with $N_2$ in-situ doping. In this work, the poly 3C-SiC film was deposited by APCVD (Atmospheric Pressure Chemical Vapor Deposition) method using single-precursor HMDS (Hexamethyildisilane: $Si_2(CH_3)_6)$ at $1200^{\circ}C$. The mechanical properties of doped poly 3C-SiC thin films were measured by nono-indentation according to the various $N_2$ flow rate. In the case of 0 sccm $N_2$ flow rate, Young's Modulus and hardness were obtained as 285 GPa and 35 GPa, respectively. Young's Modulus and hardness were decreased according to increase of $N_2$ flow rate. The crystallinity and surface roughness was also measured by XRD (X-Ray Diffraction) and AFM (Atomic Force Microscopy), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.11a
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• pp.82-85
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• 1996

It is considered that the effect of radiation aging, such as electron beam due to the ultra-high voltage for transmission, on the physical properties and electrical characteristics of electrital insulating materials. Low-density polyethylene(thickness 100[${\mu}{\textrm}{m}$]) is selected as an experimental specimen. Fourier transform infra-red spectrum, X-ray diffraction, differential scanning calorimetry and scanning electron microscopy is used so as to analysis the physical properties, the morphological changes and the crystallinity of LDPE. And it is made an experiments of dielectric characteristics in the temperature range of 20[$^{\circ}C$]~120[$^{\circ}C$], in the frequency range of 30[Hz]~1.5$\times$10$^{5}$ [Hz] and in the applied voltage range of 300[mV]~1500[mV].

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.10
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• pp.808-813
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• 2009

Indium nitride thin films were deposited by the radio-frequency reactive magnetron sputtering method. The indium target was sputtered by the mixture flow ratio of $N_2$ to Ar, 9:1. The effects of growth temperature on the structural, optical, and electrical properties of the films were investigated. With increasing the growth temperature, the crystallinity of the films was improved, and the crystalline size was increased. The energy bandgap for the film grown at $25^{\circ}C$ was 3.63 eV, and the bandgap showed an increasing tendency on the growth temperature. The carrier concentration, Hall mobility and electrical resistivity of the films depended significantly on the growth temperature and the maximum Hall mobility of $32.3\;cm^2$/Vsec was observed for the film grown at $400^{\circ}C$.