• Journal of the Korean Ceramic Society
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• v.17 no.1
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• pp.27-34
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• 1980

The synthesis of glass-ceramic materials from glasses based on industrial wastes or natural rocks their physical properties were studied. Glasses of composition, CaO14.7∼16.1, MgO7.4∼9.0, Al2O38.3∼19.3, SiO2 48.9∼51.0wt% were prepared from domestic blast furnace slag, serpentine, sea sand and etc. with additions of chromic oxide, and fluoride as nucleating agent. The glasses were subjected to controlled heat treatments and yielded fine microstructure of glass-ceramics which were composed of monocrystalline phase of aluminous diopside. X-ray diffraction techniques were adopted to identify the crystalline phases and to determine the degree of crystallization quantitatively. Density, coefficient of thermal expansion, young's modulus, microhardness and modulus of rupture were measured and the resulting properties were discussed in terms of the heat-treatment conditions, the degree of crystallization, species of crystaline phase, the microstructures formed in glass-cramics and the chemical compositions of mother glasses.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.275-279
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• 2016

This is a brief review on light trapping in Si based thin film solar cells with textured surfaces and transparent conducting oxide front electrodes. The light trapping scheme appears to be essential in improving device efficiency over 10%. As light absorption in a thin film solar cells is not sufficient, light trapping becomes necessary to be effectively implemented with a textured surface. Surface texturing helps in the light trapping, and thereby raises short circuit current density and its efficiency. Such a scheme can be adapted to single junction as well as tandem solar cell, amorphous or micro-crystalline devices. A tandem cell is expected to have superior performance in comparison to a single junction cell and random surface textures appears to be preferable to a periodic structures.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.08a
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• pp.176-176
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• 2009

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.571-574
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• 2000

In this study, Tin oxide thin film for secondary battery was deposited on Pt/Ti/Si(100). It was fabricated by r.f. reactive sputtering with Tin metal target. At constant power (130W), pressure (Base 5$\times$10$^{-6}$ Torr, working 5$\times$10$^{-3}$ Torr) and at room temperature, it was fabricated by Ar/O2 gas ratio. After deposition, we got AFM & SEM to investigated surface of thin films and had XRD to find crystalline of thin films. Charge/discharge characteristics were carried out in 1M LiPF$_{6}$ , EC:DMC = 1:1 liquid electrolyte using lithium metal at room temperature.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Journal of Powder Materials
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• v.19 no.3
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• pp.210-214
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• 2012

Mass production-capable $Li_2MnSiO_4$ powder was synthesized for use as cathode material in state-of-the-art lithium-ion batteries. These batteries are main powder sources for high tech-end digital electronic equipments and electric vehicles in the near future and they must possess high specific capacity and durable charge-discharge characteristics. Amorphous silicone was quite superior to crystalline one as starting material to fabricate silicone oxide with high reactivity between precursors of sol-gel type reaction intermediates. The amorphous silicone starting material also has beneficial effect of efficiently controlling secondary phases, most notably $Li_xSiO_x$. Lastly, carbon was coated on $Li_2MnSiO_4$ powders by using sucrose to afford some improved electrical conductivity. The carbon-coated $Li_2MnSiO_4$ cathode material was further characterized using SEM, XRD, and galvanostatic charge/discharge test method for morphological and electrochemical examinations. Coin cell was subject to 1.5-4.8 V at C/20, where 74 mAh/g was observed during primary discharge cycle.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.151-151
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• 2010

In this paper, the electrically properties of nonvolatile memory (NVM) using multi-stacks gate insulators of oxide-nitride-oxynitride (ONOn) and active layer of the low temperature polycrystalline silicon (LTPS) were investigated. From hydrogenated amorphous silicon (a-Si:H), the LTPS thin films with high crystalline fraction of 96% and low surface's roughness of 1.28 nm were fabricated by the metal induced crystallization (MIC) with annealing conditions of $650^{\circ}C$ for 5 hours on glass substrates. The LTPS thin film transistor (TFT) or the NVM obtains a field effect mobility of ($\mu_{FE}$) $10\;cm^2/V{\cdot}s$, threshold voltage ($V_{TH}$) of -3.5V. The results demonstrated that the NVM has a memory window of 1.6 V with a programming and erasing (P/E) voltage of -14 V and 14 V in 1 ms. Moreover, retention properties of the memory was determined exceed 80% after 10 years. Therefore, the LTPS fabricated by the MIC became a potential material for NVM application which employed for the system integration of the panel display.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.272-277
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• 2010

The glass-ceramics containing bottom ash (B/A) which was a by-produced from an electrical power plant was fabricated and its crystalline phase, microstructure and mechanical properties were analyzed. At first, the glass was fabricated by adding modifier oxide $Li_2O$ to lower the melting temperature of coal bottom ash. The glass obtained was heat-treated by using a 2-stage process to crystallize, that is to say, to increase the degree of crystallization in the glass-ceramics, the first heat treatment for nucleation was performed followed by the secondary one for the growth of nucleates. The main crystalline phase formed in the glass-ceramics was ${\beta}$-spodumene and the secondary phase was $L_2SiO_3$. It was recognized that the degree of crystallization of glass-ceramics was increased with a holding time of the secondary heat treatment stage. In the case of the specimens hold up to 3 hour, the crystallization was not completed and the microstructures and morphologies of crystalline phase were not uniform. In the specimens of holding time over 9 hours, the cracks were generated inside of it, so its compressive strength would decrease due them. In conclusion, it was able to obtain the optimum condition to fabriate the glass-ceramics having the properties of high crystallization degree, uniform microstructures and morphologies and the high mechanical strength.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.10
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• pp.1-7
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• 2018

Tin dioxide, $SnO_2$, is applied as an anode material in Li-ion batteries and a gas sensing materials, which shows changes in resistance in the presence of gas molecules, such as $H_2$, NO, $NO_2$ etc. Considerable research has been done on the synthesis of $SnO_2$ nanostructures. Nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in sensing gas molecules and improving the specific capacity of Li-ion batteries. In this study, $SnO_2$ nanostructures were grown on a Si substrate using a thermal CVD process with the vapor transport method. The carrier gas was mixed with high purity Ar gas and oxygen gas. The crystalline phase of the as-grown tin oxide nanostructures was affected by the oxygen gas flow rate. The crystallographic property of the as-grown tin oxide nanostructures were investigated by Raman spectroscopy and XRD. The morphology of the as-grown tin oxide nanostructures was confirmed by scanning electron microscopy. As a result, the $SnO_2$ nanostructures were grown directly on Si wafers with moderate thickness and a nanodot surface morphology for a carrier gas mixture ratio of Ar gas 1000 SCCM : $O_2$ gas 10 SCCM.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.59.1-59.1
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• 2010

Aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) is studied with the structure of a glass/Al/$SiO_2$/a-Si, in which the $SiO_2$ layer has micron-sized laser holes in the stack. An oxide layer between aluminum and a-Si thin films plays a significant role in the metal-induced crystallization (MIC) process determining the properties such as grain size and preferential orientation. In our case, the crystallization of a-Si is carried out only through the key hole because the $SiO_2$ layer is substantially thick enough to prevent a-Si from contacting aluminum. The crystal growth is successfully realized toward the only vertical direction, resulting a crystalline silicon grain with a size of $3{\sim}4{\mu}m$ under the hole. Lateral growth seems to be not occurred. For the AIC experiment, the glass/Al/$SiO_2$/a-Si stacks were prepared where an Al layer was deposited on glass substrate by DC sputter, $SiO_2$ and a-Si films by PECVD method, respectively. Prior to the a-Si deposition, a $30{\times}30$ micron-sized hole array with a diameter of $1{\sim}2{\mu}m$ was fabricated utilizing the femtosecond laser pulses to induce the AIC process through the key holes and the prepared workpieces were annealed in a thermal chamber for 2 hours. After heat treatment, the surface morphology, grain size, and crystal orientation of the polycrystalline silicon (pc-Si) film were evaluated by scanning electron microscope, transmission electron microscope, and energy dispersive spectrometer. In conclusion, we observed that the vertical crystal growth was occurred in the case of the crystallization of a-Si with aluminum by the MIC process in a small area. The pc-Si grain grew under the key hole up to a size of $3{\sim}4{\mu}m$ with the workpiece.