• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.241.1-241.1
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• 2011

Numerous possible applications for $ZrO_2$ nanotubes exist such as for catalyst support structures, for sensing or for applications as a solid state electrolyte. Especially, because of a large specific surface area, high efficiency for solid oxide fuel cell (SOFC) application at low temperature can be expected for nanotublar structures in even small size. A zirconium precursor, Tetrakis (ethylmethylamino) zirconium, TEMAZr and $H_2O$ oxidant were used to deposit$ZrO_2$ thin films on an anodized aluminum oxide (AAO) templates having sub-100nm cylindrical pores by atomic layer deposition (ALD) in the temperature range of 150~250$^{\circ}C$. The crystalline structures of as-prepared and post-annealed $ZrO_2$ nanotubes were characterized by x-ray diffraction and high-resolution transmission electron microscopy. The as-prepared samples at $150^{\circ}C$ and $200^{\circ}C$ were showed amorphous, whereas a mixed phase of tetragonal, monoclinic and amorphous polymorph was observed at $250^{\circ}C$. In the bulk, zirconia remains monoclinic phase up to $1,175^{\circ}C$, however, $ZrO_2$ nanotubes were showed tetragonal phase upon post thermal treatments merely at $400^{\circ}C$. This trend may be indicative of high-curvature surfaces of nanotubes and thereby the presence of intrinsic compressive strain. The amount of amorphous structures in the mixed phase as well as as-grown $ZrO_2$ nanotubes were also gradually decreased by subsequent heat treatment.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.217-217
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• 2012

Solution-processed tungsten oxide thin film with thickness of about 30 nm is prepared from ammonium tungstate. This layer is introduced into the interface between the poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) layer and the ITO electrode to be used as an electron blocking layer. The annealed tungsten oxide thin films at $150^{\circ}C$ and $300^{\circ}C$ show amorphous phase, while the $400^{\circ}C$ -annealed tungsten oxide film shows crystalline phase. At $150^{\circ}C$ annealing temperature, the conversion efficiency is significantly improved from 0.71% to 1.42% as the condition is changed from vacuum to air atmosphere, which is related to oxidation state of tungsten in amorphous phase. For the air annealing condition, the conversion efficiency is further increased from 1.42% to 2.01% as the temperature is increased from $150^{\circ}C$ to $300^{\circ}C$, which is mainly due to the removal of the chemisorbed water. However, a slight deterioration in photovoltaic performance is observed when the temperature is increased to $400^{\circ}C$, which is ascribed to poor electron blocking ability due to the formation of crystalline phase. It is concluded that $W^{6+}$ oxidation state and amorphous nature in tungsten oxide interlayer is essential for blocking electron effectively from the active layer to the ITO electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.404-409
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• 2011

An amorphous $Ge_2Sb_2Te_5$ thin film is one of the most commonly used materials for phase-change data storage. In this study, $Au_x(Ge_2Sb_2Te_5)_{1-x}$ thin film amorphous-to-crystalline phase-change rate were evaluated in using 658 nm laser beam. The focused laser beam with a diameter <10 ${\mu}m$ was illuminated in the power (P) and pulse duration (t) ranges of 1-17 mW and 10-460 ns, respectively, with subsequent detection of the responsive signals reflected from the film surface. We also evaluated the material characteristics, such as optical absorption and energy gap, crystalline phases, and sheet resistance of as-deposited and annealed films. The result of experiments showed that the thermal stability of the $Ge_2Sb_2Te_5$ film is largely improved by adding Au.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.376-381
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• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• Macromolecular Research
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• v.9 no.4
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• pp.238-246
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• 2001

Properties of ternary blends of nylon 6 (Ny6), a thermotropic liquid crystalline polymer (TLCP, poly(ester amide), 20 wt%) and a maleic anhydride grafted polypropylene (2 wt%) (MAPP) were studied under various processing conditions. TLCP was pre-blended with MAPP first and then the binary one blended again with Ny6. The processing temperature of the second mixing was varied. Thermal properties show the partial miscibility of the ternary blend. The morphology of the TLCP phase in the first blending shows mostly in the fibril bundle shape, but varies between droplets and oriented fibrils after the second processing. Some of TLCP phase lost the fibril morphology during the second processing stage. The morphology variation invokes the change in tensile properties. Low extrusion temperature (270$\^{C}$) provides more fibril shapes, which are associated with less deformation in the second stage. The processing temperature effect was more evident when the draw ratio was high. High drawing was applicable due to the stabilizing action of tile compatibilizer.

• Fibers and Polymers
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• v.7 no.4
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• pp.358-366
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• 2006

Thermotropic liquid crystal polymer (TLCP)-reinforced poly(butylene terephthalate) (PBT) composites were prepared by melt processing. The improvement in the mechanical properties and the processability of the PBT/TLCP composites was attributed to the reinforcing effect by TLCP phase and its well distribution in the PBT matrix. X-ray diffraction results demonstrated that a slow cooling process leads to the thicker lamellar structures and the formation of more regular crystallites in the composites. The incorporation of TLCP improves not only the tensile strength and flexural modulus but also the heat distortion temperature (HDT) of the PBT/TLCP composites. The HDT values of the composites were dependent on TLCP content. The improvement in the HDT values of the PBT/TLCP composites may be explained in terms with the increased flexural modulus, the development of more regular crystalline structures, and the enhancement of the ability of the composites to sustain the storage modulus by TLCP phase. In addition, the simple additivity rule makes it possible to predict the HDT values of the PBT/TLCP composites.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.605-611
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• 1998

A computer experimental model for analyzing the microstructures and properties of vibratory deposited power compacts was developed. The effects of some significant variables such as amplitude, frequency, cycle, etc. on the change of diffraction patterns and packing densities of the deposited powder compacts were examined. In addition, the condition of phase transition from non-crystalline phase to crystalline one was determined. Data obtained from the present method quite well fitted the empirical correlations for real experimental data. In conclusion, the present model is so useful to investigate the densification and ordering of vibratory compaction.

• Journal of Korean Society for Atmospheric Environment
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• v.21 no.2
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• pp.161-168
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• 2005

The catalytic oxidation of toluene in low concentration was investigated over manganese oxide/$\gamma$-A1$_{2}$O$_{3}$ catalysts. As increased manganese loading, the conversion of toluene increased at a lower temperature. The 18.2wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ appeared to be the most active catalyst. XRD results indicated that most of the catalysts exist as MnO$_{2}$ and Mn$_{2}$O$_{3}$ crystalline phase. After the reaction, the used and the fresh catalysts were characterized by XPS. For the used catalyst, a prominent feature has increased. TPR profiles of 18.2 wt$\%$ Mn/$\gamma$-Al$_{2}$O$_{3}$ changed significantly as the manganese loading increased at a lower temperature.

• The Korean Journal of Ceramics
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• v.2 no.1
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• pp.33-38
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• 1996

In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

• Journal of Information Display
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• v.10 no.3
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• pp.117-120
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• 2009

A new crystallization method for amorphous silicon, called selective area heating (SAH), was proposed. The purpose of SAH is to improve the reliability of amorphous silicon films with extremely low thermal budgets to the glass substrate. The crystallization time shortened from that of the conventional solid-phase crystallization method. An isolated thin heater for SAH was fabricated on a quartz substrate with a Pt layer. To investigate the crystalline properties, Raman scattering spectra were used. The crystalline transverse optic phonon peak was at about 519 $cm^{-1}$, which shows that the films were crystallized. The effect of the crystallization time on the varying thickness of the $SiO_2$ films was investigated. The crystallization area in the 400nm-thick $SiO_2$ film was larger than those of the $SiO_2$ films with other thicknesses after SAH at 16 W for 2 min. The results show that a $SiO_2$ capping layer acts as storage layer for thermal energy. SAH is thus suggested as a new crystallization method for large-area electronic device applications.