• ETRI Journal
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• v.11 no.4
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• pp.84-97
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• 1989

The influence of Zn, Si and Te diffusion on the interdiffusion in $GaAs-Ga_1_-xIN_xAs_1__yP_y$and InP$Ga_1__xIn_xAs_1__yP_y$ heterostructures was studied. The heterostructures were grown by liquid phase epitaxy, and the impurity diffusion into the heterostructures was carried out using metal compound or element sources. The extent of interdiffusion for both group III and V atoms was observed by depth profiling of matrix elements with secondary ion mass spectrometry and Auger electron spectroscopy. Selective enhancement of cation interdiffusion was observed by the concurrent Zn diffusion in both the GaAs based-and InP based-crystals. In contrast to the Zn diffusion, the Si diffusion in the GaAs based-crystal and the Te diffusion in the InP based-crystal enhanced both cation and anion interdiffusion to the same extent. A kick-out mechanism is proposed to explain the selective enhancement of the cation interdiffusion due to Zn, and a single vacancy mechanism is proposed for the interdiffusion due to Si and Te.

• Applied Chemistry for Engineering
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• v.27 no.3
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• pp.335-341
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• 2016

In this study, impurity effects on diffusive-convection flow fields by physical vapor transport under terrestrial and microgravity conditions were numerically analyzed for the mixture of $Hg_2Cl_2-I_2$ system. The numerical analysis provides the essence of diffusive-convection flow as well as heat and mass transfer in the vapor phase during the physical vapor transport through velocity vector flow fields, streamlines, temperature, and concentration profiles. The total molar fluxes at the crystal regions were found to be much more sensitive to both the gravitational acceleration and the partial pressure of component $I_2$ as an impurity. Our results showed that the solutal effect tended to stabilize the diffusive-convection flow with increasing the partial pressure of component $I_2$. Under microgravity conditions below $10^{-3}g_0$, the flow fields showed a one-dimensional parabolic flow structure indicating a diffusion-dominant mode. In other words, at the gravitational levels less than $10^{-3}g_0$, the effects of convection would be negligible.

• Journal of the Korean Magnetics Society
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• v.24 no.3
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• pp.71-75
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• 2014

Ground state energy levels of the $Fe^{3+}$ paramagnetic impurity ion in stoichiometric $LiTaO_3$ and in congruent $LiTaO_3$ single crystals were calculated with electron paramagnetic resonance constants. Energy levels between six energy levels were obtained with spectroscopic splitting parameter g and zero field splitting constant D for $Fe^{3+}$ ion. The energy diagrams of $Fe^{3+}$ ion were different from different magnetic field directions ([100], [001], [111]) when magnetic field increases. The calculated ZFS energies of $Fe^{3+}$ ion in stoichiometric and congruent $LiTaO_3$ single crystals for ${\mid}{\pm}5/2$ > ${\leftrightarrow}{\mid}{\pm}3/2$ > and ${\mid}{\pm}3/2$ > ${\leftrightarrow}{\mid}{\pm}1/2$ > transitions were 12.300 GHz and 6.150 GHz, and 59.358 GHz and 29.679 GHz, respectively. It turns out that energy levels of $Fe^{3+}$ paramagnetic impurity in $LiTaO_3$ crystal are different from different crystal growing condition.

• Journal of the Korean Magnetics Society
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• v.13 no.5
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• pp.204-210
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• 2003

Electron magnetic resonance (EMR) of paramagnetic Cr$^{3+}$, Mn$^{2+}$, and Fe$^{3+}$ impurity ions in ferroelectric LiNbO$_3$ and LiTaO$_3$ single crystals has been studied. The actual sites location of paramagnetic impurity ions in the crystals was suggested from the experimental results and zero field splitting parameters calculated by superposition model. It turns out that Cr$^{3+}$ ions in LiNbO$_3$ crystal have two resonance centers and enter both the Li$^{+}$ and Nb$^{5+}$ ions. Mn$^{2+}$ and Fe$^{3+}$ impurity ions in LiNbO$_3$ substitute for Nb$^{5+}$ ions. However, both Cr$^{3+}$ and Fe$^{3+}$ ions in LiTaO$_3$ crystal reside at Li$^{+}$ ions.$ +/ ions.+/ ions.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.855-858
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• 2008

Transient current (TC) on bulk-state liquid crystal mixtures was measured. We found that TC is very sensitive to impurities and the features of TC curves depend on the type of contamination, from which the quality of materials can be definitely evaluated and the type of impurities can also be revealed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.

• Journal of Magnetics
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• v.18 no.3
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• pp.221-224
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• 2013

Electron paramagnetic resonance (EPR) spectra of $Mn^{2+}$ impurity ion in Stoichiometric $LiNbO_3$ single crystal (SLN) was investigated with an X-band EPR spectrometer in the temperature range of 3 K~296 K. The intensity of EPR spectrum of $Mn^{2+}$ ion was increased to 20 K and decreased again below 20 K as the temperature decreases. The zero-field splitting parameter D decreased as the temperature increases. It was suggested that $Mn^{2+}$ ion substitute for $Nb^{5+}$ ion instead of $Li^+$ ion. No changes for hyperfine interaction of $Mn^{2+}$ ion was obtained in the temperature range of 3 K~296 K.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.486-490
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• 1993

Cd4SnSea6 & Cd4SnSe6 : Co2+ single crystals were grown by the chemical transport reaction (CTR) method. The grown single crystlas crrystallize in the monoclinic structrue and have the direct band gaps. The energy gaps of them are 1.68eV for Cd4SnSea6 & Cd4SnSe6 : Co2+ at 293K. The impurity opticla absorption peaks due to cobalt dped with impurity appear at 4879cm-1, 5392cm-1 and 6247 com-1, and are attributed to the electron transitions between the split energy levels of Co2+ ion sited at Td symmetry of Cd4SnSe6 single crystal.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.188-194
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• 1998

The GaSe:$Er^{3+}$(5mol%) single crystals grown by the Bridgman technique displayed a direct energy gap at 1.79 eV and an indirect energy gap of 1.62 eV at 300 ${\circ}^$K. Also an optical absorption peak by impurity was found at 6505 $cm^{-1}$. The peak identified the origin of the electronic transitions to be between the energy levels of $Er^{3+}$ ions.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.6
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• pp.246-251
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• 2014

Recent studies have shown methods of improving solar cell efficiency. Especially on single crystalline silicon wafer which is high-efficiency solar cell material that has been widely studied. Interstitial oxygen (Oi) is the main impurity in the Czochralski (Cz) growing method, and excess of this can form precipitates during cell fabrication. We have demonstrated the effect of Oi impurity and oxygen precipitation concentration of the wafer on Cz-silicon solar cell efficiency. The result showed a decrease in cell efficiency as Oi and oxygen precipitation increase. Moreover, we have found that the critical point of [Oi] to bring higher cell efficiency is at 14.5 ppma in non-existent Bulk Micro Defect (BMD).