• Title/Summary/Keyword: Crystal impurity

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Factors Affecting the Property of $CaCO_3$Precipitated from $CaCl_2-Na_2CO_3-H_2O$ System ($CaCl_2-Na_2CO_3-H_2O$ 반응계에서 침강성탄산칼슘의 성상에 영향을 주는 인자에 관하여)

  • Song, Young-Jun;Park, Charn-Hoon;Cho, Dong-Sung
    • Resources Recycling
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    • v.5 no.4
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    • pp.32-41
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    • 1996
  • The objective of this study was to investigate the facton affecting the property of CaCO, farmed from CaClz-Na,CO,-HiOsystem. The effcct of the concentmtlon of reaclants, impurity, the pH of reaction, the addition of sccd crystal, and injectingvelocity af reaclant solution an thc yield oI CaCO; polymorphs. parlide size and whiteness of CaCO, were investigated. Thcmqor resulls are ;o fallows; I The optimum concentratinn of reildilnts for forming vaterlte and aragonite is the range of 0.1-1.0 mol/l, when the yicld of vittcrite and araga~nles howed 7542% and XU-90%. respedively. 2. Among thc composition of impunticscontained h limestone, Fe' decrease the wh~tcness nf CaCO;. md Mg" increase the yield of aragonite. 3. The pHrange of vaterite and aragonite are formed with high yield is 8-11, and Calcite is famed in pH 6-8 with big particle size of 1over and in pH 11-13 with small particle size of I under. 4. The yicld of calcite and aragonite was increased by addingthc seed cryst.al nf itself.d cryst.al nf itself.

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Growth of CdSe thin films using Hot Wall Epitaxy method and their photoelectrical characteristics (HWE방법에 의한 CdSe 박막 성장과 광전기적 특성)

  • Hong, K.J.;Lee, K.K.;Lee, S.Y.;You, S.H.;Shin, Y.J.;Suh, S.S.;Jeong, J.W.;Jeong, K.A.;Shin, Y.J.;Jeong, T.S.;Kim, T.S.;Moon, J.D.;Kim, H.S.
    • Journal of Sensor Science and Technology
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    • v.6 no.4
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    • pp.328-336
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    • 1997
  • The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are $600^{\circ}C$ and $430^{\circ}C$ respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150k to 293k by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(${\gamma}$), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of $1.39{\times}10^{7}$, the MAPD of 335mW, and the rise and decay time of 10ms and 9.5ms, respectively.

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