• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.3
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• pp.289-294
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.3
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• pp.325-335
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• 1994

The spinel $MgO.Al_20_3$ single crystals were grown by FZ (floating zone) method. Its melting point is about, $2135^{\circ}C$ and is important to the process of the growth from the melt. There have been some reports of the growth by Czochralski and Verneuil method. However, this study is the first trial to the spinel crystal with the application of FZ method. In this study, $MgAl_2O_4$ spinel crystals were grown by using FZ method which uses the ellipsoidal mirror furnace having infrared halogen lamps as a heat source. With dopants of transition metal ions, it was possible to melt the feed rod which does not absorb the infrared rays due to the transparent properties to infrared ray of spinel itself and the red, green and blue colored spinel single crystals could be grown more easily. As a conclusion, the purpose of this study is to find the spinel single crystal growth mechanism with respect to th growth interfaces and molten zone stability and to characterize the state of growth resulting from the concavity to the melt of interfaces.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.18-28
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• 1998

A laboratory experiment was made of a control of temperature oscillation in Czochralski convection. Numerical computation was also made to delineate the control of temperature oscillation. The suppression of temperature oscillation was achieved by varying the rotation rate of crystal rod ($\Omega=\Omega_0(1+A sin 2{\pi}ft/t_p)$), where A denotes the amplitude of rotation rate and f the frequency factor. Based on the inherent dimesionless time period of temperature oscillation ($t_p$), the suppression rate of temperature oscillation was characterized by the mixed convection parameter ($0.217{\leq}Ra/PrRe^2{\leq}1.658$). The optimal values of A and f were also scrutinized. To understand the suppression mechanism of temperature oscillation, the controls of isotherm($\theta$) and equi-vorticity($\omega$) were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.4
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• pp.402-416
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• 1999

The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.3
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• pp.209-214
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• 1995

Abstract 0.2 wt % $Fe_2O_3$ doped $SrTiO_3$ single crystals were grown by floating zone method in air and Nz atmosphere, respectively. The growth rate was fixed at 5 mm/hr and rotation speed was maintained at 30 rpm. As - grown crystals were cut perpendicular to its growth direction and then, annealed at 900, 1000 and $1100^{\circ}C$ for 2 hours in Nz atmosphere. Resistivities of each samples were measured and then converted into conductivities. By using these conductivity values, the activation energies were calculated and by means of the calculated activation energies, mechanism which contribute to increasing the electrical conductivity were investigated.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.6
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• pp.256-259
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• 2006

The amorphous $SiO_x$ nanowires were synthesized by the vapor phase epitaxy (VPE) method. $SiO_x$ nanowires were formed on silicon wafer of temperatures ranged from $800{\sim}1100^{\circ}C$ and nickel thin film was used as a catalyst for the growth of nanowires. A vapor-liquid-solid (VLS) mechanism is responsible for the catalyst-assisted amorphous $SiO_x$ nanowires synthesis in this experiment. The SEM images showed cotton-like nanostructure of free standing $SiO_x$ nanowires with the length of more than about $10{\mu}m$. The $SiO_x$ nanowires were confirmed amorphous structure by TEM analysis and EDX spectrum reveals that the nanowires consist of Si and O.

• Journal of the Korean Ceramic Society
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• v.48 no.2
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• pp.121-126
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• 2011

The study investigates the effects of a body that influences the nucleation and growth of crystal by experiment the application of zinc crystalline glaze to five of the most favorably used kinds of bodies sold in the market. As a result, in all bodies used in the test, willemite crystal is appeared on the surface and in the case of white porcelain, super white and white porcelain sculpture clay, beautiful crystals is developed. The reason that crystal does not grow and trickle down by sticking to the body in celadon clay and Sanchung clay is the large surface tension of glaze by ingredient CaO which is more often present compared to other bodies. In glaze, the ingredients $Al_2O_3$ and RO greatly influences the surface tension, and adhesion of the glaze and the body is completed by the glaze's power to stick, which is determined by the reaction of both the glaze and the body. However, in the case of Sanchung clay, the CaO in body reacts to the glaze, and glaze, on Sanchung clay, has tendency to run more compared with other bodies. It is supposed that this mechanism influences the growth of willemite crystal and the glaze's adhesion to the body.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.5
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• pp.184-190
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• 2008

$CaMoO_4$ crystals with ellipsoid, peanut, dumbbell, and notched sphere shapes were synthesized using a simple precipitation reaction. The morphology of $CaMoO_4$ crystals evolved from ellipsoids, through peanut-like structures and dumbbells, to notched spheres with increasing the concentration of $Ca^{2+}$ and $MoO_4^{2-}$ ions. This morphology evolution of $CaMoO_4$ crystals is attributed to a fractal mechanism. Branched crystal growth started at both ends of the ellipsoids. The peanut-like and dumbbell morphologies were formed by the first and second fractal growths, respectively. Finally, the notched spheres were formed by further fractal growth of dumbbells.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.138-144
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• 1998

$\alpha$-$Fe_2O_3$ fine powders with the sizes smaller than 0.5 $\mu \textrm{m}$ were prepared by the solvolysis and condensation reaction using iron(III) nitrate and ethanol as starting materials. The variation of pH and the change of FT-IR absorption peak were observed to study the reaction mechanism of iron(III) nitrate solution. In addition, the decomposition mechanism of the precipitated gel was investigated by differential scanning calorimeter, X-ray diffractometer and FT-IR spectrometer. Scanning electron microscope and BET method were performed to analyze the effects of Iron (III) nitrate concentration and reaction temperature on the particle size of $\alpha$-$Fe_2O_3$ powders.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.205-210
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• 1998

$Li^+$ and $Mo^{6+}$ containing huntite borates $YbAl_3(BO_3)_4$were grown by spontaneous crystallization. All crystal show only the huntite-borate phase detected by X-ray powder diffraction analysis. On the basis of the data of the composition analysis, the occupation mechanism of each cation in the huntite structure has been discussed. $Li^+$ and $Mo^{6+}$ containing $YbAl_3(BO_3)_4$shows a six times higher intensity of the green light SHG detected by the powder technique than YAl_3(BO_3)_4$.