• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.2
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• pp.93-100
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• 2013

Many researches have been carried out to reduce and/or to capture the major global warming gases. Especially, the hydrate formation mechanisms were intensively investigated for carbon dioxide sequestration and storage process applications. In this study, the characteristics of film-type crystal growth mechanism of carbon dioxide hydrate were comprehensively examined. Carbon dioxide hydrate crystal was formed in semi-batch type stir reactor at various pressure conditions while the temperature was fixed to be constant to reduce and minimize the guest gas solubility effects. A supply gas composition was 99.999 % of Carbon dioxide, the observation data was collected by optical microscope adopted CCD camera (Nikon DS-5M/Fi1/2M-U2). This study revealed that the guest gas pressure changes significantly altered the crystal growth mechanism and film growth rate of carbon dioxide hydrate crystal. The critical pressure of the carbon dioxide hydrate of crystal growth mechanism change was found to be 2.0 MPa. The capillary force and gas concentration gradient also significantly changed the film-type crystal growth mechanism of carbon dioxide hydrate crystal.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.1-5
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• 1997

The growth mechanism of AMT(Ammonium Meta-Tungstate) crystal was interpreted as two-step model. The contribution of the diffusion step increased with the increase of temperature, crystal size, and supersaturation. The crystal size distribution from a batch cooling crystallizer was predicted by the numerical solution of a mathematical model which uses the kinetics of nucleation and crystal growth. Temperature control of a batch crystallizer was studied using Learning control algorithm. The purity of AMT crystal producted in this investigation was above 99.99%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.66-73
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• 1991

During the growth of macroscopically dislocation-free Czochralski silicon crystal, micro precipitates causing stacking faults in the silicon wafer during the oxidation are formed Thermal history the cryscausing acquire during the growth process is known to be a key factor determining the nucleation of this micro precipitates. In this article, various mechanisms suggested on the formation of microdefects in the silicon crystal are reviewed to secure the nucleation mechanism of the micro precipitates causing OSF whose pattern is normally ring or annular in CZ silicon crytal. B-defects which are known as vacancy clustering are considered to be the heterogeneous nucleation sites for the micro precipitates causing OSF in the CZ silicon crystals.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.399-421
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• 1996

(1) The solute distribution mechanism was analyzed for the Si0.95Ge0.05 single crystal fiber by u-PD method. (2) The steady-state solutions were obtained for the molten zone and the capillary zone. (3) The effect of the convection in the molten zone on partitioning was not significant for many cases. (4) Intermediate transient rise of Ge was shown by the sudden change of the growth velocity or molten zone height. (5) Periodic compositional modulation can be designed by using the intermediate transient.

• Journal of the Korean Ceramic Society
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• v.31 no.3
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• pp.249-256
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• 1994

By surface structure and X-ray topographic observation, growth mechanism of NAB single crystal grown by TSSG technique using a BaB4O7 flux was studied. Surface structure of grown crystals were investigated by optical microscope. Growth history and crystal defects included within grown crystal were investigated using X-ray topography. The {001} faces were grown by 2-D nucleation growth. As decreasing cooling rate, growth mechanism of {111} and {11} was changed from 2-D nucleation growth to the growth by screw dislocation. Only surface striations developed parallel to a-axis were observed on {010} faces. Growth sector of NAB crystals were divided into {001}, {111}, {010}, {021}, {11}. The inclusion which was usually trapped between {001} faces was investigated.

• Transactions on Electrical and Electronic Materials
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• v.13 no.2
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• pp.51-59
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• 2012

Piezoelectric langasite crystals have superior properties such as high temperature performance and high quality Q and can be applied in combustion pressure sensors and surface acoustic wave (SAW) filters. Crystal growth, crystal structure and properties of langasite group are reviewed, and the mechanism of piezoelectricity of langasite is presented based on the crystal structure and deformation under high pressure. Finally, for the discovery of new piezoelectric materials, this paper presents the role of the framework, and recommends the search of framework crystal structure, because the characteristic of the mechanism exists on the framework of the crystal structure.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3397-3406
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• 2012

Three types of spherulitic morphologies have been investigated in dual substrate mode of Belousov-Zhabotinsky (BZ) type reaction system. Prior to growth of spherulites, three distinct patterning behaviors have been observed sequentially during the reaction process. Initial and the early-phase of reaction showed the emergence of concentric ring-like wave patterns. A colloidal-state of reaction consists of numerous fine solid particles, which forms primarily some nucleation centers of dendritic characters. The nucleation centers were found to grow in sizes and shapes with the progress of reaction. It leads to growth of dendritic-like spherulitic crystal patterns. The resultant spherulites showed transitions in their morphologies, including sea-weeds and rhythmic spherulitic crystal patterns, by the effects substituted organic substrate and in the higher concentration of bromate-initiator respectively. The branching mechanism and crystal ordering of spherulitic textures were studied with help of optical microscope (OPM) and scanning electron microscope (SEM). Characteristics of crystal phases were also evaluated using X-ray diffraction (XRD) and differential thermal analysis (DTA). Results indicated that the compositions of reactants and crystal orderings were interrelated with morphological transitions of spherulites as illustrated and described.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.5
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• pp.454-458
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• 1999

Hydrodynamic Thermal Capilary Model developed previously has been modified to study the transport phenomena in the Czochralski process. Our analysis is focused on the heat transfer in the system, convection in the melt phase, and the meniscus and interface shape. Four major forces drive melt flow in the crucible, which include thermal buoyancy force in the melt, thermocapillary force along the curved meniscus, crucible rotation and crystal rotation. Individual flow mechanism due to each driving force has been examined to determine its interaction with the meniscus and interface shape. A nominal 4-inch-diameter silicon crystal growth process is chosen as a subject for analysis. Heater temperature profile for constant diameter crystal is also present as a function of crystal height or fraction solidified.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.185-190
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• 1997

The 6H-SiC single crystals were grown using a self-designed crystal grower by the sublimation method. The grown crystals were typically 30 mm in diameter and 10 mm in length. Optimum growth conditions were established as follows : the temperature of the raw material was $2150~2250^{\circ}C$, the temperature of the substrate was $1950~2050^{\circ}C$, the temperature difference between the raw material and substrate was about $200^{\circ}C$, growth pressure was 50~200 torr and growth rate was 300~700 $\mu\textrm{m}$/hr. Optical microscopy was used for observing the surface of the 6H-SiC single crystal grown and the phenomenological approach was performed on the formation mechanism of the defects in the 6H-SiC crystal. Especially, the micropipes in the as-grown surface were examined to determine the formation mechanisms of the micropipes.