• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.57.1-57.1
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• 2007

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.58.2-58.2
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 1992년도 하계학술대회 논문집 B
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• 한국결정성장학회지
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• 제4권3호
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• pp.210-222
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• 1994

축방향의 균일한 자장이 Czochralski 도가니에 가하여졌을 때의 유동장, 온도장 및 산소의 농도장이 수치적으로 연구되었다.Czochralski 유동장과 농도장에 작용하는 부력, thermocapillarity, 원심력, 자성력, 산소의 확산계수, 산소의 segregation coefficient, SiO형태의 evaporation, 도가니벽의 ablation 등이 고려되었다. 회전방향으로의 대칭성으로부터 자오면에서의 속도성분과 회전방향의 속도성분, 온도, 전류의 흐름 등이 먼저 정상상태에 도달하였다고 가정하고 초기에 일정한 산소의 농도가 주어진 상황에서 비정상 상태의 산소의 농도장이 해석되었다. Czochralski 유동장에서의 대류와 확산에 의한 산소의 전달현상이 파악되었으며 결정성장 표면으로 흡수되는 산소의 농도가 연구되었다.

• 한국전기전자재료학회논문지
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• 제18권11호
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• pp.1048-1055
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• 2005

The formula to calculate a variation of optical path length of single crystal by the electric field was derived by this study. The formula was applied to $Bi_{12}SiO_{20}$ single crystal. The results are as follows. In case of the applied electric field in the body diagonal direction and the passing light along the same direction, the variation of optical path length had the largest value. The symmetry of the space distribution of optical path length satisfied $E3C_2\;8C_3$, the set of elements of the symmetry of $Bi_{12}SiO_{20}$ single crystal. The property which gave the largest influence to the variation of optical path length is the strain of length by the Inverse piezoelectric effect. The second influence, is the variation of the refractive index by the electro-optic effect. The variation of optical path length by the inverse piezoelectric effect and by the electro-optic effect have a reverse sign each other.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1096-1100
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• 2003

A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.191-192
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• 2002

We reported pushing of colloidal particles by a moving isotropic-nematic phase boundary. Here, we report tailoring the structure of 3-dimensional networks formed by these particles by adjusting the rate of phase transition and by application of an electric field. The resulting networks affect the electro-optic performance of liquid crystal devices.

• 한국결정성장학회지
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• 제17권5호
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• pp.179-186
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• 2007

[ $CdGa_2Se_4$ ] 단결정 박막을 수평 전기로에서 합성한 $CdGa_2Se_4$ 다결정을 증발원으로하여, hot wall epitaxy(HWE) 방법으로 증발원과 기판(반절연성-GaAs(100))의 온도를 각각 $630^{\circ}C,\;420^{\circ}C$로 고정하여 성장하였다. 이때 단결정 박막의 결정성은 광발광 스펙트럼과 이중결정 X-선 요동곡선(DCRC)으로 부터 구하였다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 293K에서 운반자 농도와 이동도는 각각 $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$였다. $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수와 광전류 spectra를 293K에서 10K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$였다. 광전류 스펙트럼으로부터 Hamilton matrix(Hopfield quasicubic mode)법으로 계산한 결과 crystal field splitting 에너지 ${\Delta}cr$값이 106.5meV이며 spinorbit 에너지 ${\Delta}so$값은 418.9meV임을 확인하였다. 10K일 때 광전류 세 봉우리들은 $A_{1^-},\;B_{1^-}$와 $C_{11}-exciton$ 봉우리임을 알았다.

• 한국자기학회지
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• 제17권3호
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• pp.114-119
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• 2007

[ $bcc-Th_3P_4$ ] 구조를 가지고 있는 단결정 $Nd_3Se_4$를 성장 시킨 후 $4{\sim}300\;K$ 사이의 온도 영역에서 자기감수율을 측정했다. 측정된 자기기감수율을 축퇴된 $Nd^{3+}$ 기저상태가 결정장의 영향을 받아 발생하는 에너지 갈라짐에 의한 이론적인 자기감수율값과 비교했다. 분석 결과 $Nd_3Se_4$ 결정체 안에 있는 $Nd^{3+}$ 이온의 경우에는 결정장에 의한 영향이 거의 없음을 알 수 있었다. 또한 $T_c$가 53 K인 $Nd_3Se_4$의 자발자기화의 온도에 따른 곡선이 J=9/2에 해당하는 Brillouin function과 일치함을 확인했다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.189-189
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• 2009

This work was focused on the dielectrophoretic force of fullerenes dispersed in liquid crystal host medium, which are investigated in the homogeneously aligned liquid crystal (NLC) cells driven by external electric field. A fullerene of 10 wt% was doped into the LC medium and its electric field induced motion was controlled by both in-plane and vertical electric field. When the electric field was applied, the fullerene start to move in direction of applied electric field. The dark, grey and white states in the proposed device can be obtained by suitable combination of the polarity of applied electric field. The w and l are the width and distance between the electrodes. The reflectance at different l was measured and was found to be increased with increasing l. The dynamical motions of fullerene particles in LC medium suggest that fullerene can be designed for electronic-paper like displays.